光調制光譜(PR)根據它的微分特性，在室溫下它是一項非常敏感的半導體量測
技術。PR 實驗中為量測ΔR/R 訊號對應於探測光的能量 E，R 是探測光的反射光，
ΔR 是經過激發光調制微擾後所得 R 改變量。用光偵測器(photodector)和鎖相放大
器(lock-in amplifier)來量測反射光直流(Vdc)和交流(Vac)部分。Vac 部分除了真正
PR 訊號外還包含假訊號，假訊號主要來源為光致螢光和激發光的散射光。在 PR
實驗中可以由 Vac/Vdc(E)去除假訊號後，而得到ΔR/R(E)。若假訊號會隨著 E 變化，
消去假訊號便顯得較困難。在過去有幾個方法使得 Vdc(E)為定值；本實驗使用多
分子散射液晶(PDLC)，利用 PDLC 光穿透率隨著兩端外加電壓來改變的性質，把
PDLC 架設於探測光與樣品中來達到 Vdc(E)為定值，此種方法比過去優勢在於它
不改變光偵測器的放大倍率或不使用安裝在馬達上的可變光強度濾光器，是個快
速且可靠方法。

Photoreflectance (PR) is a sensitive technique to measure semiconductor properties at room temperature due to its derivative nature. The normalized

第一章 前言 1
第二章 半導體能帶 2
2.1 半導體能帶 2
2.2直接與間接能隙 3
2.3 激子 5
第三章 太陽能電池CIGS製程 6
3.1 太陽能電池簡介 6
3.2 半導體材料CIGS 6
第四章 調制光譜 11
4.1 調制光譜學簡介 11
4.2 調制光譜與介電係數關係 11
4.3 電子躍遷理論 15
4.4 利用電子躍遷性質導出介電係數 18
4.5 低電場調製 20
*4.6 Electro-optic效應[11] 22
*4.7 拉曼散射 23
第五章 實驗設計 25
樣品 25
5.1 CIGS樣品 25
5.2 液晶樣品 25
5.3實驗裝置 26
第六章 實驗結果與討論 29
6.1實驗結果討論與分析 29
6.2 結論 36

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