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博碩士論文 etd-0719114-112011 詳細資訊
Title page for etd-0719114-112011
論文名稱
Title
以紫外光照射成長氧化鋅奈米針水溶液之研究
Characterization of Zinc Oxide Nanotip Array Prepared by Aqueous Solution Deposition under UV Light Illumination
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
117
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2014-07-25
繳交日期
Date of Submission
2014-08-19
關鍵字
Keywords
水溶液沉積法、蛾眼效應、太陽電池、氧化鋅、抗反射層、奈米針、紫外光
aqueous solution deposition (ASD), zinc oxide (ZnO), nanotip, solar cell, moth eye principle, anti-reflection, ultraviolet (UV)
統計
Statistics
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中文摘要
在本研究中,我們利用濺鍍方式在玻璃基板上沉積氧化鋅成核層,再以水溶液沉積法(ASD)於70度低溫生長氧化鋅奈米針,並對其相關的物性、化性及光性等特性做分析。我們將探討氧化鋅奈米針的表面型態及其蛾眼效應。氧化鋅奈米針在光致螢光 (PL)的分析可以得知,氧化鋅奈米結構的紫外光激發峰值的位置約位於375 nm,在綠-黃色光 (550~650 nm)有小峰值的出現,文獻指出為氧化鋅內部缺陷,經由實驗得知笑氣回火處理可以填補氧化鋅內部缺陷而降低峰值。另外,我們在以水溶液法生長氧化鋅奈米針時照射紫外光參與反應,利用紫外光激發氧化鋅成核層產生電子電洞對,其中電洞會幫助水溶液中的氨水分解,而加快氧化鋅奈米針生長速度。我們將比較一般水溶液法成長的氧化鋅奈米針及以紫外光照射參與反應成長的氧化鋅奈米針的特性。其中以紫外光照射參與反應成長的氧化鋅奈米針的品質將會變差,推測是因為生長速度太快導致晶體內部缺陷較多。氧化鋅奈米針可利用其粗化表面和光學影響的特性,在應用上可當作抗反射層。本實驗中將利用氧化鋅奈米針成長於單晶矽太陽能電池上,並以紫外光增加氧化鋅奈米針之生長速度,利用氧化鋅奈米針當抗反射層以增加光穿透率,提升太陽能電池之效率。
我們利用掃描式電子顯微鏡探討表面形態,X射線光電子能譜儀探討元素比例與表面特性,微螢光光譜量測探討吸收光譜,傅氏紅外光譜儀探討鍵結,電流-電壓曲線量測探討太陽電池特性與光電轉換效率。實驗結果顯示,我們以紫外光參與水溶液法成長氧化鋅奈米針於單晶矽太陽能電池上時,轉換效率從未處理的10.10%提升至10.51%。而熱退火處理可以再提升氧化鋅奈米針成長於太陽能電池上時的效率,如:從退火前的11.13%提升至11.66%。
Abstract
In this study, zinc oxide (ZnO) nanotip array will be grown on ZnO nucleation layer by aqueous solution deposition (ASD) at low temperature. Characteristics of the ZnO nanotip array will be investigated. We will discuss the morphology of ZnO nanotip array and the moth-eye effect. The micro-PL analysis of ZnO nanotip array shows the typical emissions of narrow exciton related UV band peak at 375 nm and broad defect related green–yellow (550~650 nm) bands. The green-yellow emission (550~650 nm) is likely due to O vacancies and the emission is improved after N2O annealing at 300oC. Under UV light illumination, the electron-hole pairs are generated in ZnO by the photoexcitation and then the pairs diffuse to the surface. Holes could enhance the decomposition of ammonia and hence the concentration of OH- will be increased. The growth rate of ZnO nanotip array can be enhanced under ultraviolet light illumination. Characterizations of ASD-ZnO and UV-ASD-ZnO nanotip array will also be discussed. UV-ASD-ZnO has worse quality because the high growth rate may produce more defects in the structure. ZnO nanotip array with rough surface decreases reflection, so we use ZnO nanotip array as an anti-reflection layer. After growing ZnO nanotip array on single-Si solar cell under UV illumination, the efficiency of solar cell is increased.
The morphology is observed by field emission scanning electron microscope (FE-SEM). The physical properties are characterized by X-ray diffraction (XRD). The optical properties are measured by Micro-photoluminescence (Micro-PL). The coordination modes are measured by Fourier-transform infrared spectrometer (FTIR). The performance of the cells is measured by a semiconductor device analyzer. In our results, UV illumination is used for enhancing the growth rate of ZnO nanotip array, and we grow the high performance of ZnO nanotip array on single-Si solar cell to increase the efficiency. The efficiency is increased from 10.10% to 10.51%. After thermal annealing, the efficiency can be improved, for example, from 11.13% to 11.66%.
目次 Table of Contents
論文審定書 i
ACKNOWLEDGEMENT ii
摘 要 iii
ABSTRACT iv
CONTENTS vi
LIST of FIGURES x
LIST of TABLES xiii
Chapter 1 1
Introduction 1
1.1 Properties of ZnO 1
1.2 Anti-reflection layer 2
1.2.1 Anti-reflection layer of ZnO nanotip array 2
1.2.2 Anti-reflection coating – “Moth-eye” principle 3
1.2.3 Structure conditions for moth-eye effect 4
1.2.4 Effective medium theories 5
1.2.5 Effective refractive index 6
1.3 Syntheses of ZnO nanotip array 10
1.4 Advantages of aqueous solution deposition (ASD) 11
1.5 Motivation 12
Chapter 2 20
Experiments 20
2.1 Substrate cleaning procedures 20
2.2 ZnO nucleation layer prepared by RF sputtering 21
2.2.1 Sputtering mechanism 21
2.2.2 RF sputtering for ZnO nucleation 22
2.3 ASD process of ZnO nanotip array 24
2.3.1 Deposition process 24
2.3.2 Upside down process 24
2.3.3 Growth process 25
2.4 Basic mechanism of ZnO nanotip array 26
2.5 Characterization 27
2.5.1 Physical properties 27
2.5.2 Chemical properties 29
2.5.3 Optical properties 29
2.5.4 Current-voltage (I-V) Measurement 31
Chapter 3 37
Results and Discussion 37
3.1 Surface morphology of ASD-ZnO nanotip array 37
3.1.1 Conditions for the formation of wurtzite ZnO nanotip 37
3.1.2 Formation process of ZnO nanotip layer 39
3.2 Characterization of ASD-ZnO nanotip array 41
3.2.1 XRD spectra of ASD-ZnO nanotip array on corning-glass 41
3.2.2 Micro-PL spectra of ASD-ZnO nanotip array on corning-glass 41
3.3 Growth rate enhancement of ASD-ZnO nanotip array by UV light illumination 43
3.3.1 The growth process and system of ASD-ZnO nanotip array by UV illumination 43
3.3.2 Characterization of UV-ASD-ZnO nanotip array 44
3.3.3 Characterization comparisons of ASD-ZnO nanotip array and UV-ASD-ZnO nanotip array 46
3.3.4 Mechanism of ASD-ZnO nanotip array by UV illumination 49
3.4 Characterization and efficiency improvement of ASD-ZnO nanotip array on single-Si solar cell by UV light illumination 50
3.4.1 Surface morphology and efficiency parameters of single-Si solar cell 50
3.4.2 Preheating process and upright process 50
3.4.3 Efficiency of single-Si solar cell with sputtered ZnO nucleation layer 52
3.4.4 Efficiency of ASD-ZnO nanotip array and UV-ASD-ZnO nanotip array grown on single-Si solar cell for different growth time 53
3.4.5 Heating tape process 54
3.4.6 Efficiency of ASD-ZnO nanotip array and UV-ASD-ZnO nanotip array grown on single-Si solar cell by heating tape 55
Chapter 4 93
Conclusions 93
References 95
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