摘要
在本論文中，我們製作出一種部分空乏式多重閘極的SOI元件，並且研究探討這種元件的逆窄通道效應(INCE)。
在部分空乏式多重閘極SOI元件的結構中，是在矽島(Silicon MESA Island)上形成三面閘極，這種結構可以提昇元件的性能。然而為了消除矽島邊角(Corner)上的異常漏電流，所以使用圓角化(Rounded Corner)製程。而為了克服浮接基體效應(Floating Body Effect)，我們使用蕭特基基體接出(Schottky Body Contact)。根據DAVINCI三維元件模擬及量測的結果，部分空乏式多重閘極SOI元件展示出優越的特性：低臨限電壓、低次臨界斜率與高崩潰電壓。此外，比較多重閘極元件與傳統元件的電流後，可以發現多重閘極元件有著額外的電流增益。
為了深入了解部分空乏式多重閘極SOI元件中的逆窄通道效應之行為，我們使用重疊空乏區(Overlap of depletion region)的概念導出臨限電壓偏移的表示式。然因為元件已經過圓角化製程，我們亦研究其模型公式在元件圓角化後之效應。在與實驗值比較之後，計算結果與實驗結果顯示出一致性。

Abstract
In this thesis, a Multi-gate PD SOI Device is realized. The inverse narrow channel effect of the device is also studied.
In the Multi-gate PD SOI structure, it has three-surface gate on the silicon MESA Island, which can promote the device performance. However, for eliminating the abnormal corner leakage current in the MESA Island, the process of rounded corner is used. In order to overcome the floating body effect, we use the Schottky body contact. According to the 3-D DAVINCI device simulation and the measurement results, the Multi-gate PD SOI device presents the excellent characteristics: low threshold voltage, low subthreshold factor and high breakdown voltage. In addition, comparing the Multi-gate device with that of the conventional one, the excess drain current gain is observed.
In order to understand the behavior of INCE in Multi-gate PD SOI Device in depth, we use the concept of overlap depletion region to derive the expressions of threshold voltage shift. Owing to the device has rounded corner, we also study the rounded corner effect in the model formulation. Comparing calculation with that of the experiment one, the calculation shows agreement with the experiments.

Table of contents
Chapter 1 Introduction 1
Chapter 2 Multi-Gate SOI structure Developments 3
2-1 multi-gate SOI structure development 3
2-2 The 3-surface Multi-Gate PD SOI structure 8
2-3 Summary 11
Chapter 3 Simulation of Characteristics in Multi-Gate PD SOI Device 12
3-1 Multi-gate PD SOI device 12
3-2 I-V characteristics 14
3-3 The Excess Current Gain in Multi-gate PD SOI MOSFET 17
3-4 Summary 20
Chapter 4 The inverse narrow channel effect in Multi-Gate PD SOI MOSFET 21
4-1 Width variation in Multi-Gate PD SOI MOSFET 21
4-2 The expression of inverse narrow effect 24
4-3 Simulations result and discuss 27
4-4 Summary 32
Chapter 5 Experiment and Results 33
5-1 Device Fabrication 33
5-2 Device I-V characteristic 36
5-3 The Excess Current gain 39
5-4 Discussion 40
5-5 Summary 44
Chapter 6 Conclusion 45
Reference

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