本論文主要是以分子束蒸鍍系統來成長CuAlSe2薄膜，並對薄膜的結構、光性、電性、組成與表面形貌進行量測與分析。實驗結果得知：CuAlSe2薄膜具有(112)的從優取向，能隙值介於2.5eV~2.7eV之間，而且電阻率最低可以達到1.26×102 (

We use molecular beam deposition (MBD) system to grow CuAlSe2 thin film. The films have been characterized by electrical measurements but also by X-ray diffraction, electron probe microanalysis, optical measurements, scanning electron microscopy and photoluminescence. It is shown that CuAlSe2 thin film is chalcopyrite structure with a band gap of 2.65eV, p-type conductivity and the smallest resistivity is 1.26×102(

目 錄
一、緒 論 1
1.1 前 言 1
1.2 太陽能電池 2
1.3 元件設計分析 4
1.4 CUALSE2薄膜特性 5
1.5 研究目標 6
二、 實驗成長方法與分析儀器 8
2.1 基板處理 8
2.2 薄膜成長儀器 10
2.2.1 分子束蒸鍍系統(Molecular Beam Deposition，MBD) 10
2.2.2 CuAlSe2 薄膜成長 12
2.3 實驗分析設備 13
2.3.1 X-ray繞射儀 13
2.3.2 掃描式電子顯微鏡（SEM） 13
2.3.3 電子微探針分析儀（EPMA） 13
2.3.4 吸收光譜儀 14
2.3.5光激光系統(Photoluminescence，PL) 14
2.3.6 四點探針法 (Four-point probe) 16
2.3.7 霍爾量測法(Hall-measurement) 16
三、實驗結果討論 17
四、結 論 24
參考文獻 25

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