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博碩士論文 etd-0720104-230759 詳細資訊
Title page for etd-0720104-230759
論文名稱
Title
單層雜環芳香族全共軛硬桿式高分子發光二極體之封裝研究
Package of Homojunction of Fully Conjugated Heterocyclic Aromatic Rigid-rod Polymer Light Emitting Diodes
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
91
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2004-07-12
繳交日期
Date of Submission
2004-07-20
關鍵字
Keywords
光致光、封裝、電致光、高分子發光二極體、雜環芳香族硬桿式高分子、紫外光環氧樹脂
Package, Heterocyclic aromatic rigid-rod polymer, Polymer light emitting diode, Electroluminescence, Photoluminescence, UV epoxy resin
統計
Statistics
本論文已被瀏覽 5692 次,被下載 9062
The thesis/dissertation has been browsed 5692 times, has been downloaded 9062 times.
中文摘要
本研究主要以poly-p-phenylenebenzobisoxazole (PBO)的雜環芳香族全共軛硬桿式高分子作為發光層材料,氧化銦錫當陽極,鋁金屬當陰極,製作單層的高分子發光二極體,並使用紫外光硬化型環氧樹脂封裝元件,觀察其光性、電性與操作壽命的變化。
我們經實驗證實了元件經過封裝後確實能減緩水氣與氧氣破壞的速度,將原本至多一小時的操作壽命,提升到數百小時。在連續施加固定電壓或電流密度下,當電壓或電流密度愈大時,其發光強度與發光效率會愈強,但發光壽命愈短。發光二極體元件的溫度和電流密度呈線性關係。電致光光譜的發光最強波長(λmax)會隨時間演進,由一開始的534 nm往長波長移動到582 nm,產生紅位移(red shift)的現象。
元件在120℃熱退火處理十小時後,界限電壓(threshold voltage)會從5 V提高到12 V,電流密度會降低數十倍,而發光亮度會提高兩個等級,發光顏色由黃綠色變為橙紅色,發光效率也會提高約三個等級,缺點是元件壽命會下降到10小時以下。
Abstract
The focus of this study is mono-layer polymer light emitting diode (PLED). The emitting layer is poly-p-phenylenebenzobisoxazole (PBO). PBO is a fully conjugated heterocyclic aromatic rigid-rod polymer. Anode is indium-tin-oxide (ITO). Cathode is aluminum (Al). We used UV epoxy resin to package PLED devices, then measured current-voltage response, electroluminescence (EL) emission, and device lifetime.
We demonstrate that the packaged mono-layer PBO LED reduced its demise from water and oxygen. Device lifetime increased from 1 hour to several hundred hours. At a larger bias voltage or current, emission intensity and device efficiency became higher. But decay rate increased leading to shortened device lifetime. Device temperature appeared linearly with current density. A red shift of the EL emission was observed. The λmax. of emission spectra moved from 534 nm (initial) to 582 nm (after 100 hrs).
After thermal annealing at 120℃ for ten hours, threshold voltage increased from 5 V to 12 V, current density decreased to several 10 mA/cm2, luminous intensity improved several ten times to 10-2 cd/m2, emission color changed from yellow-green to orange, luminous efficiency improved from 10-7 to 10-4 cd/A, but device lifetime declined to less than 20 hrs.
目次 Table of Contents
一、緒 論 1
1-1 前言 1
1-2 有機發光二極體之發展 1
1-3 研究動機 3

二、高分子發光二極體之製作與探討 4
2-1 基本結構 4
2-1-1 單層結構 4
2-1-2 多層結構 4
2-1-3 電極選擇 7
2-1-3-1 陽極(Anode) 7
2-1-3-2 陰極(Cathode) 8
2-2 PBX系列硬桿式共軛高分子 9
2-3 載子傳導機制 10
2-4 能帶理論(Energy Band Theory) 12
2-5 螢光理論(Luminescence Theory) 13
2-6 發光二極體壽命(Light Emitting Diode Lifetime) 16
2-7 實驗設備操作原理 17
2-7-1 熱差分析(Differential Thermal Analysis,DTA) 17
2-7-2 熱重分析(Thermogravimetric Analysis,TGA) 18
2-7-3 熱機械分析(Thermomechanical Analyzer,TMA) 19
2-7-4 旋轉塗佈機(Spin Coater) 19
2-7-5 真空熱蒸鍍機(Vacuum Thermal Evaporator) 19
2-7-6 掃描式電子顯微鏡(Scanning Electron Microscopy,SEM) 22
2-7-7 原子力顯微鏡(Atomic Force Microscope,AFM) 22
2-7-8 紫外光-可見光吸收光譜(UV-Vis Absorption Spectrum) 24
2-7-9 光致光(Photoluminescence,PL)光譜 25
2-7-10 電性量測:Keithley® 2400之應用 27
2-7-11 電致光(Electroluminescence,EL)光譜 27

三、實驗內容 29
3-1 材料介紹 29
3-1-1 PBO發光材料 29
3-1-2 紫外光(UV)硬化型環氧樹脂 30
3-2 發光二極體元件的製作 32
3-2-1 高分子溶液配製 34
3-2-2 蝕刻ITO玻璃基材 34
3-2-3 清洗ITO玻璃 34
3-2-4 旋轉塗佈製備薄膜 35
3-2-5 PBO薄膜熱處理 35
3-2-6 蒸鍍金屬電極 35
3-2-7 封裝元件 36
3-3 光電反應量測方法 37
3-3-1 同步式熱重及熱差分析儀(Simultaneous DTA – TGA) 37
3-3-2 熱機械分析儀(Thermal Mechanical Analyzer,TMA) 38
3-3-3 紫外光-可見光吸收光譜(UV-Vis Absorption Spectrum) 38
3-3-4 掃描式電子顯微鏡(Scanning Electron Microscopy,SEM) 39
3-3-5 原子力顯微鏡(Atomic Force Microscope,AFM) 39
3-3-6 光致光(Photoluminescence,PL)量測系統 39
3-3-7 電性量測(I-V Curve) 40
3-3-8 電致光發光光譜及壽命量測 41
四、結果與討論 43
4-1 ITO玻璃之穿透率分析 43
4-2 金屬電極厚度之選擇 44
4-3 元件厚度結構之分析 44
4-4 紫外光硬化型環氧樹脂之分析 46
4-4-1 紫外光硬化型環氧樹脂之基本性質分析 46
4-4-2 紫外光硬化型環氧樹脂能量吸收之分析 49
4-4-3 紫外光硬化型環氧樹脂熱裂解溫度之分析 49
4-4-4 紫外光硬化型環氧樹脂硬化程度分析 50
4-5 紫外光-可見光吸收光譜與光致光光譜之分析 52
4-6 ITO基材表面之分析 53
4-7 電致光光譜與壽命量測 57
4-7-1 未封裝元件之壽命 57
4-7-2 封裝後元件之電流密度-電壓(J-V)曲線 58
4-7-3 封裝後元件量測之分析 59
4-7-3-1 固定不同電壓、電流之壽命量測 59
4-7-3-2 發光效率之分析 61
4-7-3-3 元件溫度之分析 64
4-7-3-4 電致光光譜波長變化之分析 65
4-7-4 封裝元件閒置一個月之壽命量測 68
4-7-5 開關測試之分析 70
4-8 熱退火處理後元件之性質 72
4-8-1 電流密度-電壓(J-V)曲線 72
4-8-2 不同偏壓下之電致光光譜分析 72
4-8-3 固定不同電壓、電流之壽命量測 73
4-8-4 發光效率之分析 79
4-8-5 暗點(Dark Spot)之分析 79
4-8-6 再現性之分析 82

五、結論 86

六、參考文獻 88
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