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博碩士論文 etd-0720106-144844 詳細資訊
Title page for etd-0720106-144844
論文名稱
Title
電漿分子束磊晶成長氮化銦的光致螢光研究
Photoluminescence of InN grown by PAMBE
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
74
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2006-07-19
繳交日期
Date of Submission
2006-07-20
關鍵字
Keywords
光致螢光、氮化銦
InN, Photoluminescence
統計
Statistics
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中文摘要
本文是以光致螢光(PL)的量測來研究氮化銦的光學特性。氮化銦薄膜是用電漿輔助分子束磊晶(plasma-assisted molecular beam epitaxy, PAMBE)成長在矽基版Si(111)上,本實驗樣品改變氮化銦的磊晶溫度,以成長出品質良好的氮化銦薄膜為目的。
在光致螢光的實驗量測中,我們藉由改變量測溫度和激發能量密度,來研究PL峰值位置、強度、和峰值半高寬(full–width–at– half–maximum,FWHM)的變化。為了包含可見光和紅外光的範圍,我們使用了兩種不同的偵測器,第一種是光電倍增管(PMT),它是用來量測可見光的範圍,第二種是固態偵測器(PbS),它是用來量測近紅外光的範圍。在近紅外中,出現單一佔優勢的峰值。
在改變量測溫度中,光致螢光曲線我們使用 Varshni equation來fit。在不同入射激發雷射能量的光致螢光中,可以找出一個線性關係。最後從光學量測中,來推論氮化銦的band gap energy。
Abstract
Unintentionally doped InN thin films have been epitaxially grown on Si (111) by plasma-assisted molecular-beam epitaxy (PAMBE) with AlN buffer layers. The optical characteristics were investigated with photoluminescence (PL). In analyzing the PL spectra, we look into the variations in peak positions, intensities, and full-width -at-half maximum (FWHM) by changing the temperature and the laser power. To cover both the visible and IR spectral ranges, two different detectors were used, PMT for the visible and PbS for the near-IR. A single namely, dominant peak was found in the near-IR regime. The temperature dependent PL line-shape is fitted with the Varshni equation. Excitation laser power dependent PL is found to follow a linear relation. The energy band gap of InN is inferred from the optical measurements.
目次 Table of Contents
第一章 前言..........................................5
第二章 基本原理......................................6
2.1 X-ray 繞射原理................................6
2.2 霍爾效應(Hall effect)........................8
2.3 光致螢光(Photoluminescence,PL)原理........11
第三章 儀器介紹.....................................15
3.1 X-ray 繞射儀.................................15
3.2 霍爾量測系統.................................17
3.3 光致螢光(PL)系統...........................20
第四章 實驗結果與分析...............................25
4.1 樣品製備與生長參數...........................25
4.2 X-ray繞射分析................................28
4.3 霍爾量測分析.................................31
4.4 光致螢光分析.................................33
第五章 結論.........................................61
Reference.............................................64
附錄一................................................66
參考文獻 References
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