||This research is preparing a Nanostructure zinc oxide thin films by sol-gel methods, we use spin coating method to coat the gel on the substrate, and then put the substrate from 100°C -500°C for 10 min after each coating. We change the concentration of sol-gel、add dispersing agents and change the temperature of heat treatment to confer structure and morphology of nanostructure zinc oxide thin film. Through the experimentation we can know when the concentration of sol-gel become low, the film properties of zinc oxide thin films will become bad. And the thickness of zinc oxide thin films will become thick with increasing the concentration of sol-gel.And adding appropriate dispersing agents will become different morphology of ZnO thin film surface, on the other side, when the different temperature of heat treatment, the nature of crystal、roughness of the surface and photoelectric character will change.|
Then we accede AmAc to sol-gel solution will dope n ion into the ZnO thin film, and the thin film with doping n ion has better electric characteristic than without doping. In the end, we Prepare ZnO thin film to apply as thin film transistor, we can make a p-type channel TFT successfully. TFT's critical voltage is -0.72V,carrier mobility is 0.29 cm2/Vs and On/Off ratio is 1.1E4.