本研究是使用溶膠凝膠法在基板上製備氧化鋅薄膜，利用旋轉塗佈的方式，將凝膠塗佈在基板上，再經由不同的熱處理以形成不同結晶性的氧化鋅薄膜。本研究藉由改變溶膠溶液的濃度、加入分散劑的有無、熱處理溫度的改變等製程條件，來探討溶膠凝膠法製備的氧化鋅薄膜結構之特性、電性的分析與光學性質之變化等。經由實驗發現，當溶膠濃度低於某濃度時，氧化鋅薄膜的成膜性會變差；而薄膜的成長厚度亦會隨著溶膠的濃度增加而變厚；而適當的添加分散劑對氧化鋅薄膜之表面形態也會有所不同。另外，在不同的熱處理溫度下，薄膜的結晶性、表面粗糙度及光電特性也會有所改變。

再經由添加醋酸鋅於溶膠溶液中來摻雜氮離子於氧化鋅薄膜之中，經由實驗發現，有經過摻雜氮離子的氧化鋅薄膜在電性方面確實優於未經過摻雜的氧化鋅薄膜許多。

最後，吾人把所製備之氧化鋅薄膜利用於薄膜電晶體元件上，成功製得一p型通道之薄膜電晶體，其薄膜電晶體元件之臨界電壓為-0.72 V，載子遷移率為0.29 cm2/Vs，而On/Off ratio則為1.1E4。

This research is preparing a Nanostructure zinc oxide thin films by sol-gel methods, we use spin coating method to coat the gel on the substrate, and then put the substrate from 100°C -500°C for 10 min after each coating. We change the concentration of sol-gel、add dispersing agents and change the temperature of heat treatment to confer structure and morphology of nanostructure zinc oxide thin film. Through the experimentation we can know when the concentration of sol-gel become low, the film properties of zinc oxide thin films will become bad. And the thickness of zinc oxide thin films will become thick with increasing the concentration of sol-gel.And adding appropriate dispersing agents will become different morphology of ZnO thin film surface, on the other side, when the different temperature of heat treatment, the nature of crystal、roughness of the surface and photoelectric character will change.

Then we accede AmAc to sol-gel solution will dope n ion into the ZnO thin film, and the thin film with doping n ion has better electric characteristic than without doping. In the end, we Prepare ZnO thin film to apply as thin film transistor, we can make a p-type channel TFT successfully. TFT's critical voltage is -0.72V,carrier mobility is 0.29 cm2/Vs and On/Off ratio is 1.1E4.

目錄
誌謝…………………………………………………………………………………………………Ⅰ
摘要…………………………………………………………………………………………………Ⅱ
Abstract …………………………………………………………………………………………Ⅲ
目錄…………………………………………………………………………………………………Ⅳ
圖目錄………………………………………………………………………………………………Ⅶ
表目錄………………………………………………………………………………………………XI

第一章 序論………………………………………………………………………………………1
1.1 前言 ………………………………………………………………………………………………1
1.2 研究動機與目的…………………………………………………………………………….1

第二章 理論基礎與文獻回顧……………………………………………………………4
2.1 氧化鋅之介紹………………………………………………………………………4
2.2 氧化鋅薄膜之製備…………………………………………………………………5
2.3 溶膠凝膠法之介紹…………………………………………………………………6
2.4 薄膜電晶體元件構造……………………………………………………………9
2.5薄膜電晶體基本工作原理………………………….………………………10
2.6薄膜電晶體的重要參數與公式………………….………………………13
第三章 實驗步驟與儀器設備…………………………………………………………15
3.1 實驗藥品……………….……………………………………………………………15
3.2 實驗步驟………………………………………………………………………………16
3.3實驗架構……………..…….………….………………………………………….17
3.4 實驗量測架構……………….…….………………………………………………18
3.5 旋轉塗佈機(Spin coater)……………………………….……………….19
3.6 場發射型掃描式電子顯微鏡(FEG-SEM)…………………………20
3.7 X光能譜散佈分析儀 (Energy Dispersive Spectrometer, EDS)……
….…………………………………………………………………………………………………22
3.8 原子力量子顯微鏡(AFM)………………………………………………………..23
3.9 表面輪廓分析儀(Surface profiler)………………………………………..25
3.10 橢圓偏振光測量儀(Ellipsometry)……………………………………………..27
3.11 紫外與可見光光譜儀(UV-VIS)………………………………………………..30
3.12 螢光光譜儀(Fluorescence spectrometer)…………………………………32
3.13 X-ray繞射儀(XRD)………………………………………………………………..33
3.14 霍爾量測(Hall Measurement system)……………………….……………..36
3.15 薄膜電晶體之元件製作……………………………………………………………..40
3.16 半導體參數分析儀(Semiconductor Parameter analysis)………….41

第四章 實驗結果與討論…………………………………………………………………42
4.1不同溶膠之配方對成長氧化鋅薄膜之成膜性差異………….………..42
4.2不同熱處理溫度對成長氧化鋅薄膜之表面形態與結構之影響...47
4.3不同熱處理溫度對成長氧化鋅薄膜之光學性質影響……….……….56
4.4摻雜對氧化鋅薄膜之表面型態分析………….…………….………..……….59
4.5不同熱處理環境下對成長氧化鋅薄膜之表面形態之影響…......62
4.6摻雜對氧化鋅薄膜之電性分析……………………………………….……….65
4.7薄膜電晶體元件之電性分析……………………………………………………70

第五章 結論…………………………………………………………………………………….73

第六章 參考文獻…………………………………………………………………………….75

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