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論文名稱 Title |
滲硼之化學氣相沉積鑽石的拉曼光譜分析
Raman study on p-type CVD diamond |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
137 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2003-07-11 |
繳交日期 Date of Submission |
2003-07-21 |
關鍵字 Keywords |
拉曼光譜、滲硼 Raman, p-type CVD Diamond |
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統計 Statistics |
本論文已被瀏覽 5767 次,被下載 4249 次 The thesis/dissertation has been browsed 5767 times, has been downloaded 4249 times. |
中文摘要 |
中文摘要 本論文是以H2、CH4 及O2 為氣體源,C3H9O3B 為摻 雜源,利用微波電漿輔助化學氣相沈積法,應用兩階 段之成核及成長製程,在p-type(111)面矽基板上成長滲 硼鑽石薄膜。本論文以成核、成核後鑽石薄膜的成長 及成核後滲硼鑽石的成長作為研究的架構,針對壓 力、溫度、微波功率、直流偏壓、O2 的流量及C3H9O3B 的摻雜濃度做一系列的研究。實驗的樣品經由電子掃 瞄顯微鏡(SEM),拉曼光譜儀(Raman),X 光繞射儀 (XRD),傅利葉紅外光譜儀(FTIR)及電流-電壓特性量測 (I-V)分析。結果顯示,以負偏壓輔助成核可達到高密 度成核,負偏壓愈大,密度愈高且成核區域愈大,最 後在-320V 時達到最大值,較高的微波功率使沈積速率 加快,造成結晶的型態粗大、劣化,微波功率600W 與 工作壓力30torr 條件下,可達到高密度的成核,成核密 度約109 cm-2。鑽石薄膜及滲硼鑽石薄膜的成長是階段 性的,成長90 分鐘後,成長機制開始改變。拉曼光譜 是分析鑽石薄膜成長品質最有效的工具。 I |
Abstract |
Abstract In this work, H2, CH4, and O2 are used as gas sources and C3H903B is used as the doping source, microwave plasma chemical vapor deposition and a two-steps deposition process will be applied to the growth of boron-doped diamond on p-type(111) silicon substrate. In this work, nucleation and growth of diamond film have been studied. A series of experiments are focused on the depenence of experimental pressure, temperature, power, dc bias, flow rates of O2, and doping concentration of C3H903B. The samples are examined by SEM, Raman, XRD, FTIR, and I-V. The results show that if nucleation is assisted by a negative dc bias, it can reach high density. The growth of diamond and the boron-doped diamond film is in multi steps. After 90 minutes of growth, the mechanism of deposition will be changed. |
目次 Table of Contents |
目錄 中文摘要………………………………………………….….I Abstract…………………………………………………..…..II 目錄…………………………………………………...…..…III 附表目錄…………………………………………………….V 附圖目錄…………………………………………………….VI 第一章緒論……………………………………………..…1 1-1 前言………………………………………….……..1 1-2 人工鑽石製成之演變……………………………...2 1-3 鑽石的特性及應用……………………………..….3 1-4 鑽石薄膜的製程與技術………………………..….5 第二章CVD 製程原理…………………………………….7 2-1 微波電漿的原理…………………………………...7 2-2 CVD 鑽石薄膜成核與成長………………………..8 第三章研究方法與實驗步驟…………………………….11 3-1 實驗方法…………………………………………..11 3-2 實驗步驟..…………………………………………12 3-3 薄膜性質分析……………………………………..14 第四章結果與討論……………………………………….20 III 4-1 鑽石薄膜的成核………………………………….20 4-1.1 SEM 量測結果……………………………….20 4-1.2 拉曼光譜的分析……………………………..21 4-1.3 X 光繞射儀的分析…………………………..21 4-1.4 FTIR 的分析…………………………………21 4-2 鑽石薄膜的成長………………………………….23 4-2.1 壓力之影響…………………………………..23 4-2.2 直流偏壓……………………………………..25 4-2.3 O2 氣體流量………………………………….26 4-2.4 鑽石薄膜之成長時間……………………….28 4-3 滲硼鑽石薄膜的成長……………………………30 4-3.1 壓力之影響………………………………….30 4-3.2 C3H9O3B 摻雜濃度…………………………..32 4-3.3 O2 氣體濃度………………………………….34 4-3.4 滲硼鑽石薄膜之成長時間………………….36 第五章結論………………………………………………38 參考文獻……………………………………………………40 |
參考文獻 References |
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