積體電路平面製程技術所製作的元件大多只能以二維的結構呈現，因此應用的範圍受到很大的限制，利用微機電系統技術則可呈現出三維的微結構，包含懸浮的薄膜或懸臂樑，進而可以實現各種信號的微型感測器或是微型致動元件的製作。
本論文旨在開發一種類似MUMPs的多晶矽面型微加工製程以形成三維結構之微抓舉式致動器(Scratch drive actuator, SDA)的方法，並且透過設計參數之變化，如平板長度、平板寬度、平板形狀、支撐樑寬度、彈簧設計、單一/陣列、小凹數量、軸襯長度、以及蝕刻孔設計等等，以探討其對微型SDA元件特性之影響，並且進一步尋求最佳化的元件設計規格。
根據本研究的結果顯示：(i)適當加入蝕刻孔於SDA驅動平板末端可以減少殘餘電荷並增加元件壽命，(ii)改用低電阻矽基板可以明顯降低操作電壓，降低的幅度約為35%，這對未來應用是一大突破，(iii)三角形的SDA平板較有利於提升元件壽命；其他尺寸的影響將一倂於討論中探討之。

This thesis presents a surface micromachining process to fabricate scratch drive actuator (SDA). Besides, various parameters (plate length, plate width, plate shapes, support beam width, spring type, one-plate SDA/four-plate SDA, dimple number, bushing length and etching hole…etc.) have been designed to find appropriate design parameters of the SDA and to reduce the driving-voltage.
According to the results, we can demonstrate three points below: (i) Adding etching holes at the end of plate can reduce residual electric charge and increase life time of SDA. (ii) Changing normal wafer for low resistance wafer can reduce the driving-voltage of SDA about 35%. (iii) The life time of triangle SDA is longer than those of other plate shapes. Finally, discussions and suggestions for the design of SDA are presented in this thesis.

中文摘要...................................................................................................II
Abstract....................................................................................................III
誌謝..........................................................................................................IV
目錄...........................................................................................................V圖目錄...................................................................................................VIII
表目錄......................................................................................................XI
第一章 緒論..............................................................................................1
1-1 前言.................................................................................................1
1-2 文獻回顧.........................................................................................7第二章 原理分析......................................................................................9
2-1 平行板電容...................................................................................10
2-2 扇型排列電容. .............................................................................11
2-3 SDA的形變................................................................................13
2-4 SDA的爬行步距........................................................................15
2-5 SDA致動原理............................................................................16
2-6 SDA之等效彈簧系統................................................................17
2-6-1 懸臂樑形變之等效彈簧常數...................................................17
2-6-2 橫樑之兩端為固定端之等效彈簧常數...................................19
2-6-3 應力分析...................................................................................21
第三章 元件設計與製程步驟…............................................................22
3-1 微抓舉式致動器之元件結構......................................................22
3-1-1 元件材料與結構.....................................................................22
3-1-2元件光罩設計..........................................................................23
3-1-3彈簧的設計..............................................................................29
目錄
3-1-4 使用Intellisuite模擬製程.....................................................30
3-2微抓舉式致動器元件製作...........................................................31
3-2-1 晶片RCA清洗......................................................................32
3-2-2 成長氮化矽.............................................................................33
3-2-3 以光罩＃1定義底電極之圖形.............................................34
3-2-4 成長磷矽玻璃(PSG0)做為第一層犧牲層............................35
3-2-5 以光罩＃2定義軸襯(bushing)和小凹(dimple)之圖............35
3-2-6 成長磷矽玻璃(PSG1)做為第二層犧牲層............................38
3-2-7 以光罩＃3定義錨(anchor)及下電極圖案............................40
3-2-8 成長多晶矽(Poly 0)以做為主結構層...................................42
3-2-9 以光罩＃4定義主結構層之圖案.........................................43
3-2-10 蒸鍍金屬並以光罩＃5定義出上下電極...........................45
3-2-11 釋放(Release)主結構層.......................................................46
3-3 製程及量測設備.........................................................................50
3-3-1 清華大學-奈米科技研究中心...............................................50
(1)電漿輔助化學氣相沈積系統（PECVD System...................50
(2)低壓化學氣相沈積系統（LPCVD System）.......................51
3-3-2 國家奈米元件實驗室南區辦公室........................................51
(1)自動化光阻塗佈及顯影系統(Track) .....................................51
(2)光罩對準曝光系統(Mask Aligner) ........................................52
(3)反應式離子蝕刻系統(RIE) ....................................................53
(4)光阻去除及濕蝕刻化學槽(Wet Bench) .................................53
3-3-3 成功大學-微奈米科技研究中心..........................................54
(1)表面粗度儀(α-step) .................................................................54
目錄
3-3-4 中山大學-貴儀中心..............................................................54
(1)場發射型掃描式電子顯微鏡(SEM) .......................................54
3-3-5 中山大學-電機系..................................................................55
(1)旋轉塗佈機(Spin Coater) .......................................................55
(2)濕式蝕刻清洗工作平台(Wet bench) .....................................56
第四章 實驗分析與討論........................................................................57
第五章 結論與未來展望........................................................................62
參考文獻..................................................................................................64

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