本研究之主軸為以IDT/ZnO/AlN/Si3N4/Si結構研製出具雙操作頻率(Rayleigh 模態與Sezawa模態)的表面聲波元件，為了研製出(堆疊型)層狀表面聲波元件，本研究於Si3N4/Si基板上藉由射頻磁控濺鍍法沉積氮化鋁(AlN)及氧化鋅(ZnO)壓電薄膜，並對沉積參數之影響進行探討。藉由X光繞射儀與掃描式電子顯微鏡對AlN及ZnO薄膜進行物性分析，得到具有高C軸優選取向及剖面為柱狀結構之AlN與ZnO薄膜。利用原子力顯微鏡分析其表面粗糙度，ZnO/AlN結構之平均表面粗糙度為7.644 nm。藉由黃光微影及舉離法定義出指叉電極(IDT)，製作出IDT/ZnO/AlN/Si3N4/Si表面聲波元件。
本研究結果顯示，基頻Rayleigh 模態共振頻率為144.03 MHz，插入損耗-12.4 dB；第二階 Sezawa模態共振頻率為273.09 MHz，插入損耗-15.8 dB。

In this study, dual-mode (Rayleigh-mode and Sezawa-mode) surface acoustic wave (SAW) devices using IDT/ZnO/AlN/Si3N4/Si structure were fabricated. To fabricate dual-mode SAW Devices, the RF magnetron sputtering method for the growth of piezoelectric thin films (AlN and ZnO) onto Si3N4/Si are adopted and influences of the sputtering parameters are investigated. The preferred orientation and crystalline properties of the piezoelectric thin films were evaluated by X-ray diffraction (XRD).The cross–sectional image of the piezoelectric thin films were observed by scanning electron microscopy which revealed a high c-axis preferred orientation. The surface roughness of ZnO/AlN thin films were observed by atomic force microscopy (AFM) and the surface roughness is 7.644 nm. After the ZnO/AlN thin films were deposited, Al layer was deposited onto the ZnO/AlN this films, by a DC sputtering system, and the interdigital transducers (IDTs) using the photolithography method were defined. The frequency response is measured using an E5071C network analyzer.
The frequency response of the fundamental wave mode (Rayleigh-mode) of 144.03 MHz is obtained；the high order frequency response of Sezawa mode (Sezawa-2 mode) of 273.09 MHz is obtained；the insertion loss of Rayleigh-mode and Sezawa-2 mode are -12.4 dB and -15.8 dB respectively.

摘要 i
目錄 iii
圖目錄 vi
表目錄 x
第一章 前言 1
1.1 研究背景與動機 1
1.2 層狀結構表面聲波元件 4
1.3 研究內容 7
第二章 理論分析 8
2.1 壓電理論 8
2.1.1 壓電效應 9
2.1.2 壓電材料 10
2.2 氮化鋁結構與特性 11
2.3 氧化鋅結構與特性 14
2.4 反應式射頻磁控濺鍍原理 16
2.4.1 輝光放電 16
2.4.2 磁控濺射 18
2.4.3 射頻濺射 20
2.4.4 反應性濺射 20
2.5 薄膜成長機制 21
2.5.1 薄膜沉積階段 21
2.5.2 薄膜表面與剖面結構 24
2.6 表面聲波元件理論與特性 25
2.6.1 表面聲波元件基本設計與特性 25
2.6.2 Rayleigh wave 與 Sezawa wave 29
2.6.3 頻散曲線 30
2.7 表面聲波元件種類 31
2.7.1 共振型表面聲波元件 31
2.7.2 延遲型表面聲波元件 32
2.7.3 表面聲波濾波器 33
2.8 表面聲波元件參數性質 35
2.8.1 聲波波速 35
2.8.2 插入損失 35
2.8.3 機電耦合係數 37
第三章 實驗 38
3.1 實驗流程 38
3.2 基板清洗 40
3.3 薄膜沉積 41
3.3.1 射頻磁控濺鍍系統 41
3.3.2 直流磁控濺鍍系統 44
3.4 薄膜物性分析 45
3.4.1 X-ray 繞射分析 45
3.4.2 Rocking curve 47
3.4.3 掃描式電子顯微鏡 48
3.4.4 原子力顯微鏡 49
3.5 層狀結構表面聲波元件製作流程 50
3.5.1 試片清洗 51
3.5.2 壓電層之製作 51
3.5.3 IDTs指叉電極之製作 52
3.5.4 SAW元件網路分析儀量測 54
第四章 結果與討論 55
4.1 氮化鋁薄膜之特性分析 55
4.1.1 濺鍍功率 55
4.1.2 濺鍍壓力 59
4.2 氧化鋅薄膜之特性分析 63
4.2.1 濺鍍壓力 63
4.2.2 濺鍍功率 67
4.3 ZnO/AlN/Si3N4/Si結構 71
4.4 層狀表面聲波元件之頻率響應 72
4.4.1 調變不同氮化鋁膜厚(固定氧化鋅膜厚) 72
4.4.2 層狀結構之頻率模態比較 78
4.4.3 定義AlN補償層之膜厚 80
4.4.4 調變不同氧化鋅膜厚(固定氮化鋁膜厚) 81
第五章 結論及未來展望 85
參考文獻 87

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