本研究利用改良式管中棒預型體(rod-in-tube；RIT)技術，藉由商用抽絲塔(drawing tower)成功抽製出具寬頻自發輻射螢光的摻鈰光纖(Ce-doped fiber；CeDF)。以Ce3+ : YAG晶體做為光纖纖芯材料，石英做為光纖纖衣材料，將Ce3+離子摻雜濃度為0.1at %的Ce3+ : YAG晶棒放入多層石英套管中，多層套管採用較緊密的結構以提升抽絲穩定度進而改善摻鈰光纖的纖芯真圓度，增加出光量，最後成功抽製出纖芯直徑為16 μm，纖衣直徑為125 μm的摻鈰光纖，其自發輻射功率密度為13.9 nW/nm。為了提升螢光強度，另外嘗試將改用Ce3+離子摻雜濃度為0.3at %的Ce3+ : YAG晶棒做為纖芯材料製作管中棒預型體，抽製出纖芯直徑為10 μm，纖衣直徑為125 μm的摻鈰光纖，自發輻射功率密度提升至19.6 nW/nm。
抽製出的摻鈰光纖其螢光頻譜展現於500~700nm處，由於其寬頻、短波長與近似高斯分佈的特性，適合應用於光學同調斷層掃描術光源，並利用時域光學同調斷層掃描術系統驗證縱向解析度，其縱向解析度可達1.43 μm，適合用於光學同調斷層掃描術上。以抽絲塔製程研製之CeDF其纖衣直徑與一般通訊用單模光纖相同，故可利用光通訊產業已發展成熟之相關主被動元件，增加其商業化應用的潛力。

In this study, the fabrication of broadband fluorescence Ce-doped fibers (CeDFs) with rod-in-tube (RIT) technique by using drawing tower process is proposed and demonstrated.
A preform was assembled by both the Ce:YAG rod doped with 0.1at% Ce3+-ion which acts as core and the multilayer silica tubes as cladding. The outer and inner diameters of the silica tubes are 20 and 3mm, respectively. Then, a RIT preform was employed by inserting the Ce:YAG crystal rod of 4cm length and 2mm diameter into the silica tube. The drawing CeDFs with a 16μm core and a 125μm cladding was measured to have 13.9nW/nm fluorescent power density between wavelength 500-700nm.
In order to improve the fluorescent power density behavior of CeDFs, we used another Ce:YAG rod with higher Ce3+-ion concentration of 0.3at% and inserted it to the multilayer silica tubes of the same size to made another modified preform. As a result, drawing CeDFs with 10μm core and 125μm cladding showed 19.6nW/nm of the fluorescent power density between wavelength 500-700nm.
The drawing CeDFs showed the fluorescence spectrum between 500-700nm. Due to the broad band, short wavelength and near Gaussian distribution characteristics, the CeDFs provides a useful application on OCT systems as the light source. The 10μm core CeDF we fabricated was simulated to have 1.43μm axis resolution in air. Besides, the CeDFs fabricated by drawing tower have the same cladding diameter with commercial single mode fiber. Therefore, it can cooperate with the fully developed optical communication component, and has more potential to commercialize CeDFs.

中文審定書 i
英文審定書 ii
中文摘要 iii
英文摘要 iv
內容目錄 v
圖目錄 vii
表目錄 x
第一章 緒論 1
1.1 簡介 1
1.2 研究動機 2
第二章 摻鈰晶體特性與OCT理論介紹 6
2.1 Ce3+:YAG的晶體結構與特性 6
2.2 摻鈰晶體的能階模型與吸收及輻射頻譜 10
2.3 同調斷層掃描術 12
2.3.1 低同調干涉術 12
2.3.2 解析度 17
第三章 摻鈰光纖之製作 19
3.1文獻探討 19
3.2 材料性質 20
3.3 抽絲塔製程之摻鈰光纖 23
3.3.1摻鈰光纖預型體 24
3.3.2 抽絲製程 26
第四章 摻鈰光纖之特性量測 39
4.1摻鈰光纖之折射率量測 39
4.2摻鈰光纖之傳輸損耗量測 42
4.3摻鈰光纖之自發輻射螢光頻譜量測 46
4.4微結構分析 48
4.5摻鈰光纖之縱向解析度與OCT系統 51
第五章 結論 58
5.1結論 58
5.2討論 59
參考文獻 61

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