本研究利用溶膠-凝膠法，製備具有重複讀寫的偶氮苯儲存材料，應用於光學性質上。藉由雷射的同調性，使偶氮苯有E Form與Z Form之間的構形轉變，可進行重複讀寫。因為溶膠-凝膠法可以大量生產，所以具有低成本的特性。在基材方面，有機基材的熱膨脹性大，無機基材的機械性質佳，所以無機機材比有機基材的材料更適合溶膠-凝膠法。所以選用3-氨基丙基三乙氧基硅烷(APTES)與2-{[4-(二甲氨基)苯基]偶氮基}苯甲酸(Methyl Red)做為前驅物，由於無機的矽與有機的偶氮苯會產生相分離的情形，但是藉由系統內的離子鍵形成減少相分離的情形。由於離子鍵比氫鍵的作用力強，相對提高材料的熱穩定性和長時間保存。

本研究利用不同雷射波長，討論偶氮苯光學儲存材料其繞射效率與記錄雷射光波長之間的關連性。並且進一步，針對雷射波長532 nm、450 nm與406 nm做光學性質的研究。得知雷射波長532 nm有較佳的靈敏性，記錄時間短，反應快；雷射波長450 nm所出現的高階繞射光數量較少與光強度較弱，因此在資料可以完整讀取。

In this study, the optical strong materials were prepared by sol-gel process. A method employs 3 - aminopropyl triethoxysilane (APTES) and 2 - {[4 - (dimethylamino) phenyl] azo} benzoic acid (Methyl Red) as the precursors. The ionic interaction reduce the phase separation between the inorganic silicon substrate and the organic azobenzene. The characteristics of the ion interaction compose a unique chemical, increasing the thermal stability and long term preservation.

In this study, diffraction efficiencies using various laser wavelengths, such as 532 nm、 450 nm and 406 nm, have been thoroughly studied. It is found that the recording wavelength of 532 nm provided a better performance, since the diffraction efficiency was higher than the other s. On the other hand, the recording wavelength of 450 nm did not generate high order diffractions. This makes it desirable to reconstruct the object wave with low distortion and low noises.

論文審定書 i
摘要 ii
Abstract iii
第一章 緒論 1
1.1 前言 1
1.2 研究動機與目標 6
第二章 文獻回顧與理論基礎 9
2.1 文獻回顧 9
2.2 偶氮苯光柵形成原理 11
2.3 光致變(photochromism)系統簡介 11
2.4 光致變材料之機制 12
2.5 光致變材料的分類 13
2.6 偶氮苯化合物之光異構化 14
2.7 全像術之簡介 15
2.8 繞射效率之計算方法 17
2.9 平面光柵與體積光柵(plane and volume grating) 17
2.10 溶膠凝膠法簡介 19
第三章 試片製程 23
3.1 實驗藥品 23
3.2 製程步驟 24
第四章 材料性質檢測 27
4.1 實驗儀器 27
4.2 結果與討論 28
4.2.1 甲基紅之 E-Z 構形改變之檢測 28
4.2.2 矽基材與甲基紅之間的離子鍵檢測 29
4.2.3 矽基材之水解縮合檢測 30
4.2.4 矽基材之孔洞特性檢測 32
第五章 光學性質檢測 33
5.1 光柵製作之光學架構 33
5.2 資料讀取之光學架構 35
5.3 結果與討論 37
5.3.1 不同雷射記錄波長對試片A之繞射效率影響 37
5.3.2 不同雷射光強度(532 nm)對試片A之繞射效率影響 40
5.3.3 波長 532 nm對試片B之繞射光強度影響 42
5.3.4 波長 450 nm 對試片B之繞射光強度影響 44
5.3.5 波長 406 nm 對試片B之繞射光強度影響 46
第六章 結論 48
參考文獻 50

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