IC封裝中，基於降低成本考量，已有研究其它製程來取代金線製程的趨勢。相較於金線，銅線有更好的導電導熱性，而銅導線與晶片接合的好壞對於整個IC產品的好壞影響甚大，因此銅線微接點的可靠度值得更進一步改善。第一部份的研究分為兩組實驗，第一組選用0.7mil的純銅線、鍍鈀銅線、銅鈀金線，第二組選用0.7mil的銅鈀金線搭配1.6/2.8/4um之鋁墊，在HTST、PCT及TCT三種測試環境下，觀察三種介金屬相Cu9Al4、CuAl、CuAl2的生長順序。研究發現富鋁的介金屬化合物CuAl2在大多數的情況中會先生成，然後才是第二相的Cu9Al4產生，在經過長時間時效之後，由於鋁墊消耗殆盡，Cu9Al4相會成為最終相。但在較厚鋁墊的HTST試驗中發現，CuAl2相最終將會取代Cu9Al4而存在。研究中也觀察擴散界面產生的kirkendal voids，將隨時效時間增加累積、合併最終成為crack，導致接點失效。第二部份研究有關銀合金線製程，其具有導電導熱性佳、對可見光反射率高達90%、耐電流較金銅大、較銅容易儲存等優勢，但銀合金線技術起步較晚，且由於目前文獻上缺乏相關的平衡相圖，對接點介金屬相形成的機制，不如Au-Al二元系來的清楚。本研究的擴散路徑與相分析結果將可提供未來製作低溫平衡相圖的訊息。

For lower cost considerations, copper wire bonding has been applied in IC packaging in recent years. In this study, the intermetallics(IMCs) formed, growth and crack development were examined to evaluate the reliability of several copper wires with/ without wire surface coatings.In this study, the reliability tests include HTST, PCT, and TCT. The wire types are the 0.7 mil 4N copper wires, the Palladium coated-Copper (Pd-Cu) wires, and Au-Pd-plated copper wires. And there are three substrate types with the aluminum pad thickness of 1.6/2.8/4 micrometer. For the HTST test samples, two aging temperatures, 175℃and 205℃ were applied and the aging periods from 150 hrs to 2000 hrs. The microstructure of micro joints are cross-sectioned and examined under an electron microprobe to verified the formed intermetallic phases for the samples tested in various aging periods. The samples under PCT and TCT tests are examined for the corrosion and crack formation behavior. The formation of IMCs, Cu9Al4, CuAl and CuAl2, which are main compounds formed in copper wire bonding micro joints. The Al-rich phase (CuAl2) has high priority, and the second phase(Cu9Al4) appear on the interface near the copper wire side. After long period aging, the Cu-rich phase(Cu9Al4) expected to form when Al pad be consumed. However, in the thicker Al pad cases, the Cu9Al4 phase will be replace by the first phase(CuAl2) finally. The results also show that, the kirkendall voids accumulate and form cracks in the bonding micro joint, and therefore make the micro joint fail. The intermetallic formation sequences of different wire types are shown for a comparison.The second part of study is about Ag wire bonding process. Ag wire has good electric conductivity, thermal conductivity, high current withstand capacity, and easy to store. However, compared to Au-Al wire bonding system, it is not enough to understand Ag-Al-Au phase diagram and the intermetallic formation of Ag-alloy wire bonding. This study of Ag wire can provide more information about diffusion paths and phase identification of Ag-Al-Au ternary system in the lower temperature.

論文審定書 i
誌謝 ii
中文摘要 iv
英文摘要 v
目錄 vii
表目錄 x
圖目錄 xi
壹、前言 1
貳、文獻回顧 4
2-1 銅銲線部份 4
2-1-1 Cu-Al二元相圖 4
2-1-2 Cu-Al介金屬化合物的生成與成長 4
2-1-3 Cu-Al介金屬化合物對接點的影響 5
2-1-4 介金屬化合物生長速度公式 7
2-1-5 銅銲線製程與金線之比較 8
2-1-6 鍍鈀銅銲線製程 9
2-1-7 銅線待克服的問題 10
2-2 銀銲線部份 12
2-2-1 Al-Au 二元系統相平衡圖 12
2-2-2 Ag-Al 二元系統相平衡圖 13
2-2-3 Au-Ag 二元系統相平衡圖 14
2-2-4 Ag-Al-Au 三元系統相平衡圖 14
2-2-5 Al-Au、Al-Ag、Au-Ag 打線接合系統 15
2-2-6 反應路徑 17
2-2-7 動力學因素-成核與成長 19
參、實驗方法 20
3-1 銅銲線部份 20
3-1-1 銅合金線試片簡介 20
3-1-2 試片之先期測試 20
3-1-3 試片處理 20
3-1-4 試片分析 21
3-1-5 IMC厚度量測與公式建立 21
3-2 銀銲線部份 22
3-2-1 銀銲線合金擴散偶製作 22
3-2-2 合金試片的配製 22
3-2-3 擴散偶製作 24
3-2-4 均質化熱處理 24
3-2-5 試片處理 25
3-2-6 EPMA的量測分析 25
肆、實驗結果 26
4-1 HTST試驗下各種銅合金線的IMC生長 26
4-1-1 純銅線 26
4-1-2 攙入鈀之銅合金線 27
4-1-3 鍍鈀銅合金線 28
4-1-4 銅鈀金合金線_1 28
4-1-5 銅鈀金合金線_2 29
4-2 銅鈀金線與不同厚度之鋁墊接合 30
4-2-1 薄型鋁墊 30
4-2-2 正常型鋁墊 30
4-2-3 厚型鋁墊 31
4-3 PCT試驗下各種銅合金線的IMC生長 32
4-4 TCT試驗下各種銅合金線的IMC生長 32
4-5 AgxAuy-Al擴散偶的EPMA量測分析 33
4-5-1 Ag90Au10-Al擴散偶 33
4-5-2 Ag60Au40-Al擴散偶 34
4-5-3 Ag20Au80-Al擴散偶 35
伍、實驗討論 36
5-1 HTST試驗 36
5-1-1 純銅線 37
5-1-2 攙入鈀之銅合金線 38
5-1-3 鍍鈀銅合金線 39
5-1-4銅鈀金合金線_1 40
5-1-5銅鈀金合金線_2 41
5-2銅鈀金合金線_1與三種厚度之鋁墊接合 42
5-2-1 薄型(0.8~1.5um)鋁墊 42
5-2-2 正常型(1.6~2.8um)鋁墊 43
5-2-3 厚型(2.9~4.0um)鋁墊 44
5-3 IMC成長速率公式與常數K0 45
5-4 Ag-Al-Au三元相圖量測 46
5-4-1 Ag90Au10-Al擴散偶的擴散路徑 46
5-4-2 Ag60Au40-Al擴散偶的擴散路徑 47
5-4-3 Ag20Au80-Al擴散偶的擴散路徑 48
陸、結論 49
6-1 銅銲線介金屬相成長機制 49
6-2 銀銲線合金相平衡 51
柒、參考文獻 53

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