本論文探討氧化銅奈米結構成長於不同形貌之矽基板上(矽金字塔、矽奈米柱、多孔矽)，以製備乙醇氣體感測元件。分別以不同濕式蝕刻法改變矽基板表面形貌。接著使用射頻濺鍍系統於蝕刻後矽基板沉積氧化銅種子層，並利用水熱法成長氧化銅奈米結構，完成氧化銅奈米結構/蝕刻矽元件。並分析三種不同蝕刻矽基板之複合結構物性與電性上的表現，比較對於乙醇氣體感測能力之影響。
實驗結果顯示，以蝕刻矽金字塔水熱成長氧化銅之複合結構具有最佳的靈敏度表現。在操作溫度150℃下，乙醇氣體濃度為800ppm時，靈敏度為94.99%。響應與恢復時間分別為31秒和40秒。氧化銅奈米結構/蝕刻矽金字塔擁有較佳的感測能力主要原因為金字塔結構有效增加乙醇氣體吸附之比表面積，能夠與大量的氣體分子進行吸附並反應。此外，矽金字塔與平面矽之夾角為45°，形成與乙醇氣體分子較容易接觸之表面形貌。元件之異質接面使得能障提升，從而降低元件之漏電流。因此，高感測能力之乙醇氣體感測器未來可應用於酒測值檢測或是工業安全檢測，亦可改善相關產品之發展。

In this thesis, we develop the nanostructure of copper oxide on silicon substrates with different morphologies (silicon pyramids, silicon nanorods, porous silicon) for ethanol gas sensors. The morphologies of silicon substrates are etched by different wet etching methods. After etching, the copper oxide seed layers are deposited on silicon substrates by RF sputtering system. The nanostructure of copper oxide is formed by hydrothermal method. The sensing elements of copper oxide nanostructure/etched-Si are completed. The physical and electrical properties of the devices with three different etching silicon substrates are analyzed and compared the performances to ethanol gas.
According to the experimental results, the device with silicon pyramids has the best sensitivity of 94.99% under 150℃ and 800ppm ethanol gas. The response and recovery times are 31 seconds and 40 seconds. The main reason for the best sensitivity of copper oxide nanostructure/etched-Si pyramids is the large surface area for the absorption of ethanol gas. Large area and absorb and react with a large number of gas molecules. Besides, the angle between the silicon pyramid and the silicon plane is 45°. The formation of the surface is easier for ethanol gas molecules to contact. In addition, the heterojunctions can raise the potential barrier height thus reducing leakage current. Therefore, the ethanol sensor with high sensitivity can be applied to breath alcohol test or industrial safety management. It can also improve the development of related products.

論文審定書 i
誌謝 ii
摘要 iii
Abstract iv
目錄 v
表目錄 viii
圖目錄 iix
第一章 概論 1
1-1 前言 1
1-2 氣體感測器 1
1-3 乙醇介紹 2
1-4 氧化銅介紹 2
1-5 奈米結構介紹 3
1-6 論文架構 4
第二章 理論基礎 5
2-1 氣體感測器工作原理 5
2-2 PN異質接面氣體感測器理論 6
2-3 氧化銅奈米結構水熱法成長原理 8
2-3-1 水熱法原理 8
2-3-2 氧化銅奈米結構之生長機制 8
2-4 濕式蝕刻理論 9
2-4-1 矽金字塔陣列蝕刻理論與機制 10
2-4-2 矽奈米柱蝕刻理論與機制 11
2-4-3 多孔矽蝕刻理論與機制 12
2-5 濺鍍理論 14
2-5-1 濺鍍簡介 14
2-5-2 濺鍍原理 14
2-5-3 薄膜沉積現象 15
2-6 蒸鍍理論 16
2-7 掃描式電子顯微鏡(Scannig Electron Microscope，SEM) 17
2-8 X光繞射儀(X-ray diffractometer，XRD) 19
2-9 乙醇氣體量測 19
第三章 實驗步驟與儀器介紹 21
3-1 材料選用 21
3-2 成長系統 23
3-2-1 射頻濺鍍系統(RF Sputtering System) 23
3-2-2 真空熱蒸鍍系統(Thermal Vacuum Evaporation System) 24
3-3 量測儀器 25
3-3-1 場射型掃描式電子顯微鏡(Field emission scanning electron microscope, FE-SEM) 25
3-3-2 X光繞射儀（X-ray diffraction, XRD）25
3-3-3 氣體感測器量測系統 25
3-4 製程步驟與成長參數 26
3-4-1 矽基板清洗流程 26
3-4-2 矽金字塔蝕刻 27
3-4-3 矽奈米柱蝕刻 27
3-4-4 多孔矽蝕刻 28
3-4-5 氧化銅薄膜種子層之濺鍍沉積 29
3-4-6 水熱生長氧化銅奈米結構 29
3-4-7 使用熱蒸鍍系統沉積鋁電極 30
第四章 結果與討論 31
4-1 物性分析 31
4-1-1 蝕刻矽奈米結構(金字塔、奈米柱、多孔)之比較 31
4-1-2 氧化銅奈米結構成長於不同蝕刻矽基板之比較 32
4-1-3 蝕刻矽奈米結構表面氧化銅覆蓋率之計算 33
4-2 電性分析 33
4-2-1 氧化銅奈米結構成長於不同蝕刻矽基板之電流-電壓特性分析 33
4-2-2 元件在不同操作環境下之靈敏度比較 34
4-2-3 元件響應與恢復時間之探討 35
第五章 結論與未來展望 36
5-1 實驗結果歸納 36
5-2 未來展望 37
參考文獻 38
附表 42
附圖 44

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