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博碩士論文 etd-0723102-113103 詳細資訊
Title page for etd-0723102-113103
論文名稱
Title
以超音波霧化法製備錫摻雜氧化銦薄膜之光電特性
Electro-optical properties of Sn doped In2O3 thin film derived from an ultrasonic atomization process
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
83
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2002-07-08
繳交日期
Date of Submission
2002-07-23
關鍵字
Keywords
穿透率、氧化銦錫、化學霧氧沉積法
transmittance, ITO, chemical mist deposition
統計
Statistics
本論文已被瀏覽 5652 次,被下載 2224
The thesis/dissertation has been browsed 5652 times, has been downloaded 2224 times.
中文摘要
本研究以自行設計組裝之超音波霧化鍍膜系統,使用不同的先驅物,經由超音振盪器將含有先驅物之溶液霧化後,以攜帶氣体攜帶至加熱之基板上,使溶液因熱解反應而完成鍍膜,所使用之先驅物為InCl3,溶劑為去離子水,攜帶氣体為氮氣。實驗內容包括不同沉積溫度,不同的濃度系列,不同摻雜系列。
為改善薄膜導電性,以SnCl4•5H2O作為摻雜物,觀察摻雜元素對薄膜之結晶性、透光性、表面形態及導電性的影響,並試圖找出最佳穿透性及導電性的Sn摻雜量。
分析結果,在XRD分析中In2O3薄膜在250oC時已有結晶相的產生,隨著溫度的升高沉積薄膜結晶性提高。電阻率在加入Sn後明顯下降,未摻雜質的氧化銦薄膜電阻率為10-2(Ωcm),加入2-6% (Sn/In%)時最低可達9.54×10-4(Ωcm)。薄膜穿透率在可見光(400~700nm)範圍有75~88%的穿透量,氧化銦薄膜中摻雜Sn原子對其穿透率沒有很大的影響。


Abstract
A thin film deposition system using ultrasonic atomization is designed and constructed. The coatings have been produced by pyrolysis using a solution of indium chloride in deionized water. Solution containing precursors is transported by carrying gas to the heated substrate where deposition is accomplished. In this study sample series obtained with of varying process parameters such as the flow rate of carrying gas, the tin concentration, and substrate temperature.
The electrical properties of indium oxide thin film was improved using SnCl4•5H2O as a dopant. The effects of doping in crystalline, surface morphology, optical transmittance and electrical conductivity of the deposition thin films were examined and the best optimal percentage of doping for the transmittance and electrical properties were found.
Weak diffraction peaks of crystalline indium oxide were observed in XRD pattern of the thin films deposition at 250℃. The grains size of crystalline thin films grows with increasing substrate temperature. There is no change in XRD spectra between undoped and tin-doped indium oxide obtained with the same deposition temperature. The resistivity of thin films decreased greatly when dopant atom was added. The electrical resistivity of undoped indium oxide is ~10-2Ω-cm, while that of ITO films reaches a minimum of 9.54×10-4Ω-cm when doping is in the range 2~ 6%.The UV-Visible spectra indicate that the optical transmittance of all films is between 75~88%. The transmittance was not strongly affected by doping concentration.


目次 Table of Contents
目錄
摘要 Ⅰ
目錄 Ⅲ
圖目錄 Ⅵ
表目錄 Ⅷ
第一章前言 1

第二章研究動機 4

第三章文獻回顧 5
3-1 氧化銦的晶体結構 5
3-2 氧化銦的鍍膜方法 8
3-3 超音波霧化的原理 9
3-4 薄膜結晶過程與基板溫度的關係 10
3-5 Hall Effect與電性量測 12
3-5.1 Hall Effect 12
3-5.2 電性量測 13
3-6 理論載子濃度 14
3-6.1 雜質效應 14
3-6.2 氧空缺所造成的效應 15
3-6.3 氯原子進入晶格的效應 15

第四章實驗方法與步驟 17
4-1 基材之準備 19
4-2 溶膠(sol)的準備 19
4-2.1 InCl3 溶膠的準備 19
4-2.2 SnCl4.5H2O溶膠的準備 19
4-2.3 HCl 溶液的準備 20
4-3 鍍膜參數設定 20
4-3.1 C(濃度)系列 20
4-3.2 F(流量)系列 20
4-3.3 T(溫度)系列 20
4-3.4 D (Dopant)系列 21
4-4 薄膜分析、量測儀器、藥品 21
4-4.1 X-光繞射儀 21
4-4.2 掃描式電子顯微鏡(SEM) 21
4-4.3 Hall measurement 22
4-4.4紫外光-可見光光譜儀(UV-Visible) 22
4-4.5 實驗藥品 22

第五章實驗結果 23
(a)垂直鍍膜 23
5-a-1 InCl3溶液濃度選定 23
5-a-1.1 XRD結果 24
5-a-1.2 SEM(截面厚度) 觀察 25
5-a-1.3 UV-visible結果 25
5-a-1.4電阻率 26
5-a-2 F系列 27
5-a-2.1 XRD結果 27
5-a-2.2 SEM(截面厚度) 觀察 28
5-a-2.3 UV-visible結果 28
5-a-3 T (溫度) 系列 29
5-a-3.1 XRD結果 29
5-a-3.2 SEM(截面厚度) 觀察 29
5-a-3.3 UV-Visible 結果 30
5-a-3.4 SEM表面觀察 31
5-a-3.5 Hall measurement結果 32
5-a-4 D(dopant) 系列 33
5-a-4.1 XRD結果 33
5-a-4.2 SEM(截面厚度) 觀察 33
5-a-4.3 UV-Visible 結果 34
5-a-4.4 Hall measurement結果 34
5-a-4.5 SEM表面觀察 36
(b)水平鍍膜 48
5-b-1 T(溫度)系列-未摻雜Sn 41
5-b-1.1 XRD結果 41
5-b-1.2 UV-visible結果 42
5-b-1.3 Hall measurement 結果 43
5-b-1.4 SEM觀察 44
5-b-2 T(溫度)系列-摻雜0.5% (Sn/In%) 47
5-b-2.1 XRD結果 47
5-b-2.2 UV-visible結果 48
5-b-2.3 Hall measurement 結果 49
5-b-2.4 SEM觀察 50
5-b-3 T(溫度)系列-摻雜2% (Sn/In%) 53
5-b-3.1 XRD結果 53
5-b-3.2 UV-visible結果 54
5-b-3.3 Hall measurement 結果 55
5-b-3.4 SEM觀察 56
5-b-4 T(溫度)系列-摻雜6% (Sn/In%) 59
5-b-4.1 XRD結果 59
5-b-4.2 UV-visible結果 60
5-b-4.3 Hall measurement 結果 61
5-b-5 F(氣体流量)系列 62
5-b-5.1 XRD結果 62
5-b-5.2 UV-visible結果 63
5-b-5.3 Hall measurement 結果 64
5-b-5.4 SEM觀察 65
5-b-6 D(dopant) 系列 67
5-b-6.1 XRD結果 67
5-b-6.2 UV-visible結果 68
5-b-6.3 Hall measurement 結果 69
5-b-6.4 SEM觀察 70
5-b-7 薄膜厚度 73

第六章討論 75
6-1 T(溫度)系列 75
6-2 F(流量)系列 77
6-3D(dopant)系列 77

第七章總結 80

參考文獻 82

參考文獻 References
[1]許慶雄,中山大學材料所碩士論文,以超音波霧化製程製備之SnO2薄膜性質(2001)
[2]C.H. Lee, C. S. Huang, Materals Science and Engineering B22 (1994) 233-240.
[3]Z.B. Zhou, R.Q. Cui, Q.J. Pang, Y.D. Wang, F.Y. Meng, T.T. Sun, Z.M. Ding, X.B.Yu, Applied Surface science 172 (2001) 254-252.
[4]Furong Zhu, Kwran Zhang, Ewald Guenther, Chua Soo Jin, Thin Solid Films 363 (2000) 314-317.
[5]P. Thilakan, J. Kumar, Vacuum 48 (1997) 463-466.
[6]I.A. Rauf, J. Appl. Phys. 79 (8), 15 April (1996) 4057-4065
[7]Y.Djaoued, VuHong Phong, S. Badilescu, P.V. Ashrit, Fernand E. Girouard, Vo-Van Truong, Thin Solid Films 293 (1997) 108-112.
[8]Swon-Soon Kim, Sw-Young Choi, Chan-Gyung Park, Hyeon-Woo Jin, Thin Solid Films 347 (1999) 155-160.
[9]Jian Liu, E. Rädlein, G. H. Frischat, Phys. Chem. Glasses 40 (5) (1999) 277-281.
[10]Tionica F. Stoica, T. A. Stoica, V. Vanca, E Lakatos, Maria Zaharescu, Thin Solid Films 348 (1999) 273-278.
[11]Kentaro Utsumi, Osamu Matsunaga, Tsutomu Takahata, Thin Solid Films 334 (1998) 30-34.
[12]Gabriela .B. González, Jerome B. Cohen, Jin-Ha Hwang, Thomas O. Mason, Journal of Applied Physics 89 (2001) 2550-2555
[13]Robert J. Lang, The Journal of the Acoustical Society of America, 34 (1962) 6-8
[14] Jong _Heun Lee, Soon-Ja Park, Journal of American Ceramic Society 76 (1993)777-780
[15]T. Ratcheva, M. Namova, Thin Solid films 202 (1991) 243
[16]T.Minami, T. Kakumu, Y. Takeda, S. Takada, Thin Solid films 290/291 (1996) 1-5
[17]Y. Sadaoka, T.A. Jones, W. Göpel, S. kimura, N. Honda, Journal of the Materials Sciences 25 (1990) 2632
[18]H. Ohta, W. S. Seo, K.Koumoto, Journal of American Ceramic Society, 79 (1996) 2193
[19]C. Lee, K. Lim, J. Song, Solar Energy Materials and Solar Cells 43 (1996) 37-45
[20] E. Benamar, M. Rami, C. Messaoudi, D. Sayah, A. Ennaoui, Solar Energy Materials and Solar Cells 56 (1999) 125-139
[21]H. bisht, H.T. Eun, a. Mehrtens, M.A. Aegerter, Thin Solid films 351 (1999) 109-114
[22]Masayuki Kamei, Teruyuki Yagami, Satoru Takaki, Yuzo Shigesato, Applied Physics Letter 64 (20) (1994) 2712-2714
[23]L. J. Van der Pauw, Philips Technical Review 20 (1958) 220-224
[24] Keishi Nishio, Tadanori Sei, Toshio Tsuchiya, Journal of Materials Science 31 (1996) 1761-1766
[25]T. Omata, H.Fujiwara, S. Otuka-Yao-Matsuo, N. Ono, Appl. Phys.A 71 (2000) 609-614
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