具有快速升溫及低熱預算特性的快速加熱化學氣相沉積反應，近年來廣泛應用於半導體元件之薄膜成長製程。由於快速加熱化學氣相沉積製程存在許多地反應變數會導致晶圓溫度呈現空間性分佈之不均勻現象，因此，精準地控制晶圓溫度之輸出響應狀態成為重要的研究方向。

本論文探討以 控制理論和補靈敏度函數成型為基礎的控制器設計方法，並分別針對快速加熱化學氣相沉積反應之單輸入單輸出（SISO）系統、多輸入多輸出（MIMO）系統和包含乘法不確定性架構的MIMO系統設計強韌控制器，藉由控制鎢鹵素燈的功率輸出達到溫度響應之分佈均勻化。最後以電腦模擬分析之方式加以驗證，其結果顯示受控系統能達到初始設計之時域響應性能的要求。

The Rapid Thermal Chemical Vapor Deposition (RTCVD) system is an emerging and promising technology in semiconductor manufacturing which possess advantages of rapidly increasing wafer temperature and reducing the thermal budget over traditional batch processing. In recent years, the growth of thin films in the manufacture of semiconductor devices has been widely employed in the industry. Because the influences of processing variables on RTCVD systems may lead to spatial wafer temperature non-uniformity, the precise control of wafer temperature is an important issue up to the present.

In this paper the complementary sensitivity function shaping based on H-infinite control theory is applied to design robust controllers for the single-input/single-output (SISO) model of the RTCVD system, the multi-input/multi-output (MIMO) model of the RTCVD system, and the MIMO model with multiplicative uncertainties. Through control the power of the tungsten-halogen lamps, it can achieve the temperature tracking with good uniformity. Finally, the computer simulation results are obviously that the performance of the proposed controllers is satisfactory.

目錄......................................................I
圖表索引..................................................V
論文摘要（中文）.........................................IX
論文摘要（英文）..........................................X
符號表...................................................XI
第一章 緒論.............................................1
＜1－1＞前言..........................................1
＜1－2＞文獻回顧......................................2
＜1－3＞研究動機......................................8
＜1－4＞文章架構......................................10
第二章 RTCVD介紹........................................11
＜2－1＞前言..........................................11
＜2－2＞薄膜沉積原理..................................12
＜2－3＞化學氣相沉積原理..............................16
＜2－4＞快速加熱製程介紹...............................19
＜2－5＞快速加熱化學氣相沉積製程介紹..................23
＜2－6＞RTCVD反應變數.................................28
＜2－7＞溫度量測＆放射率變動..........................31
＜2－7－1＞熱電偶計＆高溫計.......................31
＜2－7－2＞放射率.........................................32
＜2－7－3＞放射率修正.....................................34
第三章 強韌控制........................................37
＜3－1＞前言..........................................37
＜3－2＞ 控制理論基本定理.............................38
＜3－3＞求解 次最佳控制器.................................43
＜3－3－1＞代數型Riccati方程式....................43
＜3－3－2＞實界引理.......................................45
＜3－3－3＞求解次最佳 控制器之運算方法....................46
＜3－4＞補靈敏度函數成型..................................49
＜3－4－1＞靈敏度函數與補靈敏度函數.......................50
＜3－4－2＞SISO之補靈敏度函數成型.........................52
＜3－4－3＞MIMO之補靈敏度函數成型.........................55
＜3－5＞乘法不確定性架構..................................57
第四章 RTCVD系統模型建立................................60
＜4－1＞前言..............................................60
＜4－2＞反應器設備介紹....................................62
＜4－3＞RTCVD之單輸入單輸出模型...........................64
＜4－3－1＞ARX介紹........................................64
＜4－3－2＞系統鑑別.......................................67
＜4－4＞RTCVD之多輸入多輸出模型...........................69
＜4－4－1＞連續模型.......................................70
＜4－4－2＞離散模型.......................................74
＜4－4－3＞模型無因次化...................................78
＜4－5＞化學反應動力學....................................79
＜4－6＞MIMO系統模型降階＆線性化..........................81
＜4－6－1＞真分正交分解...................................81
＜4－6－2＞模型降階結果...................................83
＜4－6－3＞線性化模型.....................................87
第五章 控制器設計與模擬.................................89
＜5－1＞前言..............................................89
＜5－2＞SISO控制器設計與模擬...............................90
＜5－3＞MIMO控制器設計與模擬..............................97
＜5－3－1＞原始系統.......................................97
＜5－3－2＞非結構化不確定性系統..........................107
＜5－4＞控制器降階.......................................115
第六章 結論與未來展望..................................119
＜6－1＞結論.............................................119
＜6－2＞未來研究方向.....................................120
參考文獻.................................................122
附錄一：物理參數值.......................................131

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