我們利用霍爾效應量測法，對用分子束磊晶成長的GaN半導體作電性分析。在此研究中，我們對低溫GaN緩衝層具有不同成長參數的GaN半導體作電性分析，包括：成長溫度、厚度、成長速率與N/Ga比率等，得到較高的成長溫度、厚度較薄、成長速率較慢和較低的N/Ga比率來成長緩衝層，具有提高樣品品質的功能之結論。在對GaN磊晶層條件的研究上，我們對不同N/Ga的比率與導入不同的銦之樣品作分析，發現以N/Ga磊晶比率為22.5的樣品具有較佳的品質，以及樣品的品質會隨著In加入的量增加而提高。

In the study we employ Hall measurements to analyze that the GaN semiconductor by MBE. In the study we analyze the parameters of low temperature buffer layer growth, include the temperature of growth buffer layer, buffer layer thickness, growth rate and N/Ga ratio on growth low temperature. From the result of experiment we know the higher temperature of growth buffer layer, thinner of buffer layer, slower rate of growth and lower ratio of N/Ga growth can get the superior quality GaN semiconductor. In study the GaN epitaxy layer, we analyze that N/Ga ratio of GaN epitaxy layer and indium during the epitaxy process. From the result of experiment we know the ratio of N/Ga at 22.5 is the best quality and to increase the indium content can improve the GaN of quality.

中文摘要
英文摘要
第一章 簡介 1
第二章 霍爾效應 4
2-1電阻率的量測介紹 4
2-2遷移率與載子濃度 7
2-3霍爾效應 8
2-3.1 Hall bar量測法 10
2-3.2 Van der Pauw量測法 10
第三章 實驗架設 20
3-1樣品的處理步驟 20
3-2儀器架設 22
3-3實驗步驟 27
第四章 實驗結果 38
4-1 緩衝層的研究 38
4-1.1緩衝層的成長溫度 39
4-1.2厚度(時間) 39
4-1.3 Ga的流量(成長速率) 40
4-1.4 N/Ga 成長速率比 40
4-2 GaN 磊晶的研究 41
4-2.1N/Ga的磊晶速率比 41
4-2.2導入In的研究 42

第五章 結果討論 51
5-1 緩衝層的研究 51
5-1.1緩衝層的成長溫度 51
5-1.2緩衝層厚度 52
5-1.3緩衝層成長率 53
5-1.4N/Ga Ratio 53
5-2 GaN epitaxy的研究 54
5-2.1N/Ga的磊晶速率比 54
5-2.2加入In的研究 55
第六章 結論 68
Reference 69

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