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論文名稱 Title |
CuInSe2:Sb薄膜太陽能電池之研製 Fabrication of CuInSe2:Sb Thin Film Solar Cell |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
60 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2004-07-10 |
繳交日期 Date of Submission |
2004-07-23 |
關鍵字 Keywords |
二硒化銅銦、薄膜太陽能電池 solar cell, CuInSe2 |
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統計 Statistics |
本論文已被瀏覽 5731 次,被下載 8322 次 The thesis/dissertation has been browsed 5731 times, has been downloaded 8322 times. |
中文摘要 |
本論文是以成長Al/ZnO:Al/CdS/CuInSe2/Mo/SLG結構的太陽能電池,主吸收層 CuInSe2在分子束蒸鍍系統中成長,Al、ZnO:Al、Mo層在真空磁控濺鍍系統中成長,CdS使用化學槽水域法來成長;另外在CuInSe2中摻入Sb來改變表面形貌,藉此來提高太陽能電池元件的轉換效率。目前本實驗室已成功作出有轉換效率的CdS/CuInSe2太陽能電池,以50瓦的鹵素燈光源下,量測元件的開路電壓Voc=0.32 V,短路電流Isc=1.62 mA,填充因子F.F.=33 %,接面理想因子h=3.40,空乏區內為複合電流主導,Cu-rich CuInSe2片電阻為ρs=2.4×104 W / □,波音公司的片電阻為37.04 W / □,電性仍不及文獻所提,在CuInSe2的P-N接面,存在過多的缺陷,電子和電洞複合的機率變大,使得光電流變小,因此必須改善CuInSe2薄膜品質,以增進元件效率。 |
Abstract |
This paper describes an investigation into the fabrication of Al/ZnO:Al/CdS/CuInSe2/Mo/SLG thin-film solar cell. The absorber layer CuInSe2 films deposited by multisource elemental evaporation on Mo-coated soda lime glass at Tss=550℃. Mo back metal contact and the front metal contact of Al were fabricated by magnetron sputtering. The ~800 Å CdS buffer layer on top of the CuInSe2 layer deposited by a chemical bath deposition (CBD) technique. The ZnO:Al window layer was grown by RF sputtering. Furthermore, we add Sb into CuInSe2 films to modify surface and grow smother surface of Cu-rich CuInSe2. We have fabricated the ZnO/CdS/CuInSe2 thin-film solar cell with efficiency. The open circuit voltage (Voc) is 0.32 V, the short circuit current (Isc) is 1.62 mA and fill factor (F.F.) is 33 % in our device. The junction ideality factor is h=3.40, it’s meant that recombination current is the dominant current. So, it’s essential to improve the quality of absorber layer CuInSe2 films and control the growth condition. |
目次 Table of Contents |
第一章 簡介 1 1.1前言 1 1.2 CuInSe2複晶薄膜性質 2 1.3 Cu(In,Ga)Se2複晶薄膜性質 3 1.4元件設計分析與探討 4 1.4.1元件結構設計 4 1.4.2各層薄膜之特性 6 1.5研究目的 9 第二章 實驗步驟與分析儀器 11 2.1元件製作流程 11 2.2薄膜成長儀器 15 2.2.1分子束蒸鍍系統(MBE) 15 2.2.2真空磁控濺鍍系統(Sputtering) 16 2.3薄膜特性分析方法與儀器 17 2.3.1 X-ray繞射儀 17 2.3.2 掃描式電子顯微鏡(SEM) 17 2.3.3 電子探針分析儀(EPMA) 17 2.3.4 反射光譜儀 18 2.3.5 吸收光譜儀(UV/NIR/VIS) 18 2.3.6 四點探針(Four-point probe) 18 2.3.7 熱探針量測(Hot probe) 19 2.3.8 霍爾量測(Hall measurement) 19 2.3.9 電流-電壓特性曲線量測(I-V measurement) 19 2.3.10 電容-電壓特性曲線量測(C-V measurement) 20 第三章 實驗結果 21 3.1 各層薄膜成長與分析 21 3.1.1 Mo金屬電極之鍍製 21 3.1.2 Al金屬電極之鍍製 21 3.1.3 ZnO:Al 透光抗反射層之鍍製 22 3.1.4 CuInSe2薄膜之鍍製 23 3.1.5 CuInSe2:Sb薄膜之鍍製 24 3.1.6 ZnSe薄膜之鍍製 26 3.2 Cu(In,Ga)Se2薄膜之製作 26 3.3 元件之製作與量測 28 第四章 討論 31 第五章 參考文獻 33 |
參考文獻 References |
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