本文是以化學氣相沉積(chemical vapor deposition, CVD)法在(100)面γ相鋁酸鋰 (γ–LiAlO2 , LAO)基板上成長非極性(nonpolar) m-plane GaN薄膜。Metallic Gallium、NH3和N2分別作為Ga source、N source以及載送氣體(carrier gas)，我們研究反應壓力、生長溫度、NH3/N2氣體流量和生長時間等實驗條件對GaN薄膜生長的影響。以X光繞射(XRD)和掃描式電子顯微鏡(SEM)研究GaN薄膜的生長方向及表面形貌。發現在反應壓力為200 torr、NH3/N2氣體流量為450/450sccm條件下，改變生長溫度(950°C ~ 1050°C)可以獲得c-plane、 c-混m-plane及單純m-plane的GaN薄膜。此外， m-plane GaN薄膜的品質會隨著生長時間(30分鐘~120分鐘)的增加有明顯的提升。
本文進一步利用原子力顯微鏡(AFM)、拉曼光譜(Raman)、陰極發光(CL)和穿透式電子顯微鏡(TEM)分析，研究m-plane GaN薄膜的表面形貌、薄膜應力、光學性質以及微觀結構。

In this thesis, we investigated the growth of nonpolar GaN on (100) γ–LiAlO2 substrate by a simple chemical vapor deposition (CVD) process. Metallic gallium, NH3 and ultra-purity nitrogen were used as Ga, N sources and carrier gas. The X-ray diffraction and scanning electron microscopy were used to study the influence of growth conditions such as reaction pressure, growth temperature and deposition time on the GaN epilayer’s orientation and surface morphology. It’s found that pure c plane, c mixed m plane and pure m plane GaN epilayers can be grown on LiAlO2 substrates by the change of growth temperatures (950°C~1050°C) under 200 torr pressure and NH3/N2 (450/450sccm) gas flow. In addition, with longer deposition time (30min ~120min), nonpolar GaN epilayers show better crystal quality.
Furthermore, atomic force microscopy, Raman spectroscopy, cathodeluminescence, transmission electron microscopy were used to study the surface morphology, stress, optical properties and microstructure of the nonpolar GaN epilayers.

摘要 I
Abstract II
表 目錄 V
圖 目錄 VI
第一章 概論 1
1-1引言 1
1-2 γ-LiAlO2基板 4
1-3文獻回顧 7
1-4研究緣起及目的 8
第二章 量測系統概述 10
2-1 X光繞射分析儀(X-ray diffraction, XRD) 10
2-2掃描式電子顯微鏡(Scanning Electron Microscope, SEM) 10
2-3陰極發光(Cathodoluminescence, CL) 10
2-4原子力顯微鏡(Atomic Force Microscope, AFM) 11
2-5光激發光譜(Photoluminescence spectroscopy, PL) 11
2-6拉曼光譜(Raman spectroscopy, Raman) 11
2-7穿透式電子顯微鏡(Transmission Electron Microscopy, TEM) 12
第三章 樣品成長與製備 13
3-1 化學氣相沉積(chemical vapor deposition, CVD) 13
3-2 實驗方法與步驟 14
3-2-1基板清洗 14
3-2-2 CVD生長 14
3-3 實驗製程參數 15
第四章 結果與討論 17
4-1生長溫度對GaN影響 17
4-1-1 X光繞射(XRD)分析 18
4-1-2掃描式電子顯微鏡(SEM)分析 20
4-1-3光激發光譜(PL)分析 22
4-2生長時間對GaN影響 23
4-2-1 X光繞射(XRD)分析 24
4-2-2掃描式電子顯微鏡(SEM)分析 25
4-2-3光激發光譜(PL)分析 27
4-3 m-plane GaN薄膜的性質分析 28
4-3-1原子力顯微鏡(AFM)分析 28
4-3-2拉曼光譜(Raman)分析 30
4-3-3陰極發光(CL)分析 31
4-3-4穿透式電子顯微鏡(TEM)分析 33
第五章 結論 37
參考文獻 38
附錄 41

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