本論文將對砷化銦/砷化鎵單層與多層量子點材料在不同環境的載子運動機制，我們會藉由光致螢光(Photoluminescence)光譜，對不同溫度與不同的激發強度的狀況下之載子動力學，以及利用時間解析光致螢光光譜(Time-Resolved photoluminescence)來分析載子的生命週期，觀察其生命周期的變化。並且討論單層與多層量子點之間光譜的差距，以及生命週期高低的不同。在14K，單層量子點基態之光致螢光光譜峰值位置在1.236eV，而三層量子點基態峰值在1.234eV，八層量子點基態峰值則在1.278eV。而單層量子點最長之生命週期達2.36ns，三層量子點最長生命週期達1.24ns，八層量子點最長之生命週期則達1.60ns。

The purpose of this study is to examine the energy released due to excitation and recombination of single-layered and multi-layered InAs/GaAs quantum dots samples at different conditions. The temperature-dependence and power-dependence photoluminescence and time-resolved photoluminescence for the lifetime of the carriers were measured. In addition, the difference between InAs/GaAs single-layer and multi-layer quantum dots were discussed. At 14K, the peak energy was found to be 1.236eV and the highest lifetime was 2.36ns for InAs/GaAs single-layer ground state, 1.234eV and 1.24ns for InAs/GaAs three-layers quantum dots, and 1.278eV and 1.60ns for InAs/ GaAs eight-layers quantum dots.

目錄
論文審定書 i
致謝 ii
摘要 iii
Abstract iv
目錄 v
圖目錄 vii
表目錄 xii
第一章 導論 1
1.1 簡介 1
1.2 文獻探討 3
1.3 研究動機 6
第二章 實驗儀器與架設 7
2.1 雷射激發源 7
2.2 PicoHarp360 運作原理 7
2.3 單光子計數器TCSPC 8
2.4 光子計數偵測器(Avalanche photo Diode，APD) 10
2.5 Delay Box 10
2.6 實驗光路架設 11
第三章 載子動力學 12
3.1 光致螢光(photoluminescence，PL)光譜 12
3.2 時間解析螢光(Time-Resolved photoluminescence，TRPL)光譜 12
3.3 導電帶載子複合與能量釋放 13
3.4 電子與電洞的結合機制 14
3.5 量子點能量釋放機制 16
第四章 樣品分析與討論 17
4.1 樣品資訊 17
4.2 變溫光致螢光光譜(Temperature dependent PL) 19
4.3 變功率光致螢光光譜(Power dependent PL) 33
4.4 時間解析螢光光譜分析(TRPL) 55
第五章 結論 65
參考資料 66

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