探討以原子層沈積法成長二氧化鈦薄膜於砷化鎵基板上的物理和化學特性，且利用金氧半結構來分析電特性。此外，利用硫化氨對砷化鎵基板進行硫化介面處理以改善薄膜特性。另一方面，嘗試生長較薄之二氧化鈦薄膜，利用非晶的薄膜結構以進一步改善多晶薄膜晶界所造成的漏電流

In this study, the characteristics of atomic layer deposited TiO2 films on Gallium Arsenide substrate were investigated. The physical and chemical properties were measured and surveyed. And an Al/ALD-TiO2/GaAs MOS structure was used for the electrical characterizations. For the electrical property improvements, we investigated the atomic layer deposited TiO2 films by the (NH4)2Sx treatments for GaAs substrate. The leakage currents and the hysteresis loop flatband voltage shift can be improved for ALD-TiO2 films on S-GaAs.
Furthermore, in order to resist the leakage current from the grain boundary of the polycrystalline TiO2 films, amorphous-like structure of TiO2 thinner films are investigated. The combination of sulfur passivation and amorphous-like structure thinner films is sufficient to improve the electrical properties effectively.

Chapter 1
Introduction
1-1 Properties of TiO2
1-2 Comparison of deposition methods of TiO2
1-3 Advantages of MOCVD
1.4 Advantages of ALD
1-5 Motivation of ALD-TiO2 on (NH4)2Sx treated GaAs structure
1-6 Mechanism and the structure model of GaAs with sulfur treatment
Chapter 2
Experiments
2.1 CVD theorem
2.2 Deposition system of MOCVD
2.3 Properties of source materials
2.4 Deposition system of ALD
2-5 Deposition procedures
2-5-1 GaAs wafer cleaning and sulfidation procedures
2-5-2 Aluminum metal and In-Zn alloy cleaning processes
2-5-3 Preparations of MOCVD-TiO2 films
2-5-4 Growth Parameters of ALD-TiO2 films
2-5-5 Fabrication of Metal-Oxide-Semiconductor Structure
2.6 Characterization
2-6-1 Physical properties
2-6-2 Chemical properties
2-6-3 Electrical properties
Chapter 3
Results and Discussion
3.1 Characteristics of MOCVD-TiO2 and ALD-TiO2 films on GaAs substrate
3.1.1 Deposition rate of TiO2 films
3.1.1-1 Deposition rate of MOCVD-TiO2 film on GaAs as a function of deposition temperature
3.1.1-2 Independence between deposition rate of ALD-TiO2 film on GaAs and deposition temperature
3.1.2 SEM morphologies of TiO2 film on GaAs as a function of deposition temperature
3.1.3 XRD patterns of TiO2 film on GaAs as a function of deposition temperature
3.1.4 ESCA analyses of TiO2 film on GaAs as a function of deposition temperature
3.1.5 Electrical properties of MOCVD-TiO2 films on GaAs at deposition temperature
3.1.5-1 Leakage current density of MOCVD-TiO2 film on GaAs as a function of deposition temperature
3.1.5-2 C-V characteristics of MOCVD-TiO2 film on GaAs as a function of deposition temperature
3.1.6 Electrical properties of ALD-TiO2 film on GaAs at deposition temperature
3.1.6-1 Leakage current density of ALD-TiO2 film on GaAs as a function of deposition temperature
3.1.6-2 C-V characteristics of ALD-TiO2 film on GaAs as a function of deposition temperature
3.2 Characteristics of MOCVD-TiO2 and ALD-TiO2 film on (NH4)2Sx treated GaAs substrate
3.2.1 SEM morphologies of TiO2 film on S-GaAs as a function of deposition temperature
3.2.2 XRD patterns of TiO2 film on S-GaAs as a function of deposition temperature
3.2.3 Electrical properties of MOCVD-TiO2 film on S-GaAs at deposition temperature
3.2.3-1 Leakage current density of MOCVD-TiO2 film on S-GaAs as a function of deposition temperature
3.2.3-2 C-V characteristics of MOCVD-TiO2 film on S-GaAs as a function of deposition temperature
3.2.4 Electrical properties of ALD-TiO2 film on S-GaAs at deposition temperature
3.2.4-1 Leakage current density of ALD-TiO2 film on S-GaAs as a function of deposition temperature
3.2.4-2 C-V characteristics of ALD-TiO2 film on S-GaAs as a function of deposition temperature
3.3 Characteristics of MOCVD-TiO2 and ALD-TiO2 thinner film on GaAs and S-GaAs substrate
3.3.1 SEM morphologies of TiO2 thinner film on GaAs and S-GaAs as a function of deposition temperature
3.3.2 XRD patterns of TiO2 thinner film on S-GaAs as a function of deposition temperature
3.3.3 Electrical properties of MOCVD-TiO2 thinner film on GaAs and S-GaAs at deposition temperature
3.3.3-1 Leakage current density of MOCVD-TiO2 thinner film on GaAs and S-GaAs as a function of deposition temperature
3.3.3-2 C-V characteristics of MOCVD-TiO2 thinner film on GaAs and S-GaAs as a function of deposition temperature
3.3.4 Electrical properties of ALD-TiO2 thinner film on GaAs and S-GaAs at deposition temperature
3.3.4-1 Leakage current density of ALD-TiO2 thinner film on GaAs and S-GaAs as a function of deposition temperature
3.3.4-2 C-V characteristics of ALD-TiO2 thinner film on GaAs and S-GaAs as a function of deposition temperature
CHAPTER 4
Conclusions
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