本文將討論以電漿輔助分子束磊晶系統在正方晶系鋁酸鋰基版上成長之氮化鎵奈米結構的表面特性。我們發現氮化鎵在鋁酸鋰基版上可以藉由分子束磊晶系統磊晶成長出成長方向為[11 ‾00]的M-plane平台結構以及[0001 ‾]方向的c-plane柱狀結構。由文獻中指出，c-plane柱狀結構會因為最外層捕捉到的原子不同而衍伸出盤狀或錐狀的外觀結構。同時由發光特性結果發現，c-plane柱狀結構在陰極光偵測系統量測中得到較M-plane平台結構還高出一各數量級的光訊號。

We invistegated the characteristic of GaN nanostructure grown onγ-LiAlO2 substrate by molecular epitaxy beam. We observed the c-plane GaN pillar and M-plane GaN terraces assembled at the LiAlO2 substrate. It was found that the [0001 ‾] disk was established with the capture of N atoms by most-outside Ga atoms, while the pyramid was obtained due to the missing of most-outside N atoms. To continue, the photointensity of cathode luminescence excited from the pillar structure was one order of amplitude greater than that from M-plane.

目錄
中文摘要............................................1
Abstract.............................................2

第一章 前言........................................3

第二章 量測儀器原理
2.1 X光繞射儀.....................................7
2.2 掃描式電子顯微鏡..............................10
2.3 能量散射光譜儀................................13
2.4 陰極光偵測系統................................15
2.5 聚焦離子束....................................16

第三章 實驗儀器與步驟
3.1掃描式電子顯微鏡(SEM)..........................19
3.2能量散射光譜儀(EDS)............................30



第四章 實驗結果與分析
4.1 樣品介紹.....................................35
4.2 成長結果.....................................37
4.3 結構分析.....................................46
4.4 發光特性.....................................50

第五章 結論.......................................52
Reference ............................................54

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