本論文利用a-plane (100) 鎵酸鋰(LiGaO2,LGO)基板會與氨氣(NH3)在高溫下進行氮化反應而在表面形成m-plane (10-10)氮化鎵(Gallium Nitride,GaN)，分別改變反應的溫度、氨氣流量、壓力與時間四個部分進行研究。
　　試片經由各種儀器分析。由X光繞射圖譜中得知在鎵酸鋰基板上氮化反應後可形成單一晶向的氮化鎵薄膜。並隨著氮化反應的參數改變而能改進其結晶品質。由掃描式電子顯微鏡影像中發現氮化鎵為奈米多孔結構。在拉曼光譜中，氮化鎵E2(high)模式的紅位移說明了相較於氮化鎵單晶，多孔氮化鎵中是存有壓縮應力的。光致螢光光譜中可看出隨著參數改變，光致螢光光譜的強度比(INBE/IYL)變大，也就是改善了氮化鎵的光學與結晶品質。霍爾量測的結果發現其為p-type氮化鎵，具有高載子濃度，不錯的遷移率與低電阻率。利用歐傑電子能譜中分析多孔氮化鎵的各種元素縱深分布。在穿透式電子顯微鏡的量測中觀察到多孔氮化鎵的高倍率橫截面影像，與從選區繞射圖中確認當zone axis為[0001]時，多孔氮化鎵與鎵酸鋰基板具有[100]LGO//[10-10]GaN與[0-10]LGO//[11-20]GaN的晶向關係。

　　In this thesis, the formation of m-plane (10-10) Gallium nitride (GaN) on the surface of a-plane (100) lithium gallate (LiGaO2, LGO) substrates via nitridation with ammonia (NH3) at high temperature. The parameters in this research were mainly focus on temperature, ammonia flow rate, reaction pressure, and growth time.
　　Specimens were analyzed with various instruments. X-ray Diffraction patterns showed that the nitridation process on LGO substrate resulted in the formation of the GaN single crystalline films. The crystalline quality of the GaN film could be improved by changing parameters of nitridation process. Scanning electron microscope image showed that the structure of GaN films was nanoporous. A red shift in the E2(high) phonon peak of GaN from micro-Raman indicates a compressive stress in the porous GaN with respect to the single crystalline epitaxial GaN. PL intensity ratio (INBE/IYL) of the porous GaN was found to be increased as changing parameters of nitridation process, namely the optical and crystalline quality of porous GaN was improved. Hall measurement showed that the porous GaN was p-type, and it had high hole concentration, good mobility, and low resistivity. Analyses of the elements depth profile by Auger electron spectroscopy. Transmission electron microscopy was used to observe the high resolution cross-section of porous GaN. From the selected area electron diffraction patterns, the orientation relationship between porous and LGO was determined as [100]LGO//[10-10]GaN and [0-10]LGO//[11-20]GaN when zone axis was [0001].

論文審定書 i
誌謝 ii
摘要 iii
Abstract iv
目錄 v
表目錄 vii
圖目錄 viii

第一章 序論 1
第二章 文獻回顧與理論基礎 3
2.1 文獻回顧 3
2.2 氮化鎵(GaN)的結構與特性 8
2.3 鎵酸鋰(LiGaO2)的結構與特性 12
2.4 研究動機 14
第三章 實驗方法與步驟 15
3.1 實驗介紹 15
3.2 實驗裝置 17
3.2.1 反應氣體輸送裝置 17
3.2.2 高溫反應爐 17
3.2.3 真空及排氣裝置 18
3.3 實驗步驟 19
3.3.1 基板裁切與清洗 19
3.3.2 放置試片於高溫爐內 19
3.3.3 生長前抽氣並通氮氣清潔管內 19
3.3.4 控壓與升溫至反應溫度進行反應 20
3.3.5 降溫與取出試片 20
3.4 量測系統簡介 21
3.4.1 X光繞射分析儀(X-Ray Diffraction, XRD) 21
3.4.2 掃描式電子顯微鏡(Scanning Electron Microscope, SEM) 22
3.4.3 拉曼光譜儀(Raman Spectroscopy) 22
3.4.4 光致螢光光譜儀(Photoluminescence Spectroscopy, PL) 23
3.4.5 霍爾效應量測(Hall effect measurement) 23
3.4.6 歐傑電子能譜儀(Auger Electron Spectroscopy, AES) 25
3.4.7 穿透式電子顯微鏡(Transmission Electron Microscope, TEM) 26
第四章 結果與討論 28
4.1 反應溫度對鎵酸鋰基板與氨氣反應的影響 28
4.1.1 X光繞射分析 29
4.1.2 掃描式電子顯微鏡分析 32
4.2 氨氣流量對鎵酸鋰基板與氨氣反應的影響 36
4.2.1 X光繞射分析 36
4.2.2 掃描式電子顯微鏡分析 38
4.3 反應壓力對鎵酸鋰基板與氨氣反應的影響 39
4.3.1 X光繞射分析 39
4.3.2 掃描式電子顯微鏡分析 41
4.3.3 拉曼光譜分析 43
4.3.4 光致螢光光譜分析 46
4.3.5 霍爾效應量測分析 48
4.3.6 歐傑電子能譜分析 52
4.3.7 穿透式電子顯微鏡分析 54
4.4 反應時間對鎵酸鋰基板與氨氣反應的影響 58
4.4.1 X光繞射分析 58
4.4.2 掃描式電子顯微鏡分析 60
第五章 結論 63
參考文獻 65

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