本論文題目為自組成金奈米顆粒綴於氧化鋅與奈米柱矽基板異質接面二極體之研製。製程步驟首先在P型矽基板上沉積二氧化矽與自組成原理所形成的鎳奈米球做為ICP-RIE的蝕刻遮罩，測試中找到ICP-RIE的最佳化參數CF4/Ar = 40/40sccm和下電極/射頻功率=400/400W，而後以此參數蝕刻不同時間30、60、90、120、150、180s，所得到的矽奈米柱直徑約100nm、高度介於100~500nm之間。之後以鍍率12nm/min、工作壓力10mtorr、基板溫度200 oC、氬氣流量5sccm的射頻濺鍍系統沉積N型氧化鋅於矽奈米柱表面。量測n-ZnO/p-Si的結果，ICP蝕刻120s的樣品，其PL發光效率可提升至兩倍，30s的樣品光電轉換效率最好，因此可推論蝕刻時間越長時，矽奈米柱分布越稀疏，矽奈米柱吸收能量效果越低，最後趨近平坦界面的PN二極體特性。為了藉助表面電漿效應以提升發光效率和電性，緊接著在氧化鋅層上沉積10nm金層以及回火700oC形成金奈米顆粒，由SEM圖可得金奈米顆粒直徑大約為100nm。最後再覆上約200nm的氧化鋅，至此完成元件。在PL的量測下，120s的發光效率可提升至十倍，以至肉眼可看見藍白色的激發光。長波長部分，原本的氧空缺激發光因著金奈米顆粒而耦合到650 nm並且強度增強，此為表面電漿共振效應造成。而發光強度能如此大幅提升，在於金奈米顆粒分布較於平坦，間距也較一致，使得耦合共振較明顯。電性部分，在蝕刻30s的光電轉換效率是最佳的，原因在於矽奈米柱最為緻密。

The electro-optical properties of the ZnO/Si heterojunction embedded with self-assembled gold nanoparticles on patterned silicon substrate are investigated in this master thesis. High quality n-type ZnO film is deposited on patterned p-type silicon substrate by radio-frequency sputtering to form a ZnO/Si pn junction. The patterned silicon substrates are prepared by ICP-RIE using self-assembled nickel metal dot and silicon dioxide as etching mask. The optimum ICP process conditions of silicon nanopillars are CF4/Ar ~ 40/40 sccm and bias/RF power 400/400 W. Silicon nanopillars of diameter ~ 50 nm and height 100~400 nm are formed on the substrate surface. ZnO film is then deposited of a growth rate ~ 12 nm/min at the substrate temperature = 200oC. The plasmonic effects on the electro-optical properties, including photoluminescence (PL), reflection, and electrical characteristics, are studied by adding self-assembled gold nanoparticles within the ZnO film. The self-assembled gold nanoparticles are formed by thermal deposition and rapid thermal annealing at 700oC. The gold nanoparticles are observed by scanning electron microscopy (SEM) and particles of diameter about 100 nm. The PL intensity of ZnO is enhanced more than ten times at the peak wavelength = 380 nm by adding the gold nanoparticles and silicon nanopillars. Strong blue emission light could be saw with the naked eyes. For the electric characteristics, self-assembled gold nanoparticles in patterned ZnO/Si heterojunction show photoelectric conversion phenomenon because of high electromagnetic absorption and plasmonic effects.

中文摘要
英文摘要
本文目錄
第一章 緒論.......................................................1
1-1 研究動機...................................................1
1-2 氧化鋅簡介................................................1
1-3 量子侷限效應..............................................2
1-4 表面電漿效應..............................................3
第二章 實驗儀器及原理.............................................4
2-1 快速高溫回火系統(Rapid Thermal Annealed, RTA) ............4
2-2 電感耦合式電漿蝕刻(Inductive Couple Plasma Etcher, ICP) ..4
2-3 射頻濺鍍系統(RF sputtering system) .......................4
2-3-1 濺鍍簡介.............................................4
2-3-2 電漿理論.............................................5
2-3-3 射頻濺鍍原理.........................................6
2-4 光致螢光光譜儀(Photoluminescence spectra, PL) ............8
2-5 紫外線可見光光譜儀(Ultraviolet Visible Spectrophotometer).9
第三章 元件製程與參數分析........................................10
3-1 元件製程.................................................10
3-2 矽奈米柱製作參數.........................................15
3-2-1 電漿氣體CF4與Ar混合比例分析........................15
3-2-2 下電極參數分析......................................17
3-2-3 蝕刻時間參數分析....................................19
3-3 氧化鋅沉積參數...........................................22
3-4 金奈米粒子製程...........................................23
3-5 覆蓋氧化鋅...............................................28
第四章 實驗結果與討論............................................29
4-1 矽奈米柱-光學特性........................................29
4-1-1 PL光譜量測..........................................29
4-1-2 反射光譜量測........................................32
4-2 矽奈米柱-電學特性........................................34
4-2-1 I-V暗電流量測.......................................34
4-2-2 I-V光電流量測.......................................37
4-2-3 外部量子效率........................................40
4-3 矽奈米柱和金奈米球-光學特性..............................41
4-3-1 PL光譜量測..........................................41
4-3-2 反射光譜量測........................................43
4-4 矽奈米柱和金奈米球覆蓋氧化鋅薄膜-光學特性................45
4-4-1 PL光譜量測..........................................45
4-4-2 反射光譜量測........................................47
4-5 矽奈米柱和金奈米球覆蓋氧化鋅薄膜-電學特性................49
4-5-1 I-V暗電流量測.......................................49
4-5-2 I-V光電流量測、EQE..................................51
第五章 結論......................................................54
參考文獻.........................................................55

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