發光二極體有反應快、壽命長與低消耗功率之優點，氮化銦鎵(InGaN)除了是直接能隙的三氮族半導體外，藉由調變氮化銦鎵之銦含量可使發出之光包含所有可見光。
本研究將探討以電漿輔助分子束磊晶(Plasma-assisted MBE)成長於氮化鎵基板(GaN-template)的雙層氮化銦鎵(InGaN)量子井之特性。使用X光繞射分析(XRD)與光致螢光(PL)分析樣品磊晶結構與光性，而使用原子力顯微鏡(AFM)與電子顯微鏡(SEM)觀察樣品表面形貌。
由於氮化銦(InN)真空下熔點較低，所以成長氮化銦鎵於氮化鎵上時之成長溫度需低於氮化鎵之成長溫度。首先調變氮化銦鎵成長溫度，成長溫度分別為530℃、540℃、550℃與570℃，透過PL光譜分析決定較適合的成長溫度，接著固定成長溫度並改變成長時之銦鎵(In/Ga)比，發現氮化銦鎵之銦含量會隨著銦鎵比增加而提升，同時藉由AFM圖型觀察出樣品表面粗糙程度與成長阻擋層(Barrier)時之氮鎵(N/Ga)比有直接關係。最後針對不同氮化銦鎵量子井厚度，透過PL光譜分析，發現較薄之氮化銦鎵量子井其氮化銦鎵訊號半高寬(FWHM)變窄且強度變強。最後成長出氮化銦鎵能隙為2.54 eV且半高寬為2.74 meV之雙層氮化銦鎵量子井樣品。

We have grown InGaN/GaN quantum wells (QWs) by plasma-assisted molecular beam epitaxy(PA MBE) for the application light-emitting diodes (LEDs). In order to evaluate the optical property of the QWs, we applied photoluminescence measurement on the samples in room temperature. Moreover, double crystal X-ray diffraction and scanning electron microscope were also applied to analyze the material property for the samples with different indium and gallium flux ratios under varied growth conditions.
In order to obtain the better growth condition, we increase InGaN/GaN QWs temperature from 530℃ to 570℃. The characteristics of these samples were analyzed by PL, we took 570℃ as growth parameter for the next experiment. After temperature dependence, we adjusted In/Ga ratio with temperature fixed at 570℃, we found that with the higher In/Ga ratio there are more In composition in InGaN/GaN QWs. At the same time, we observed the roughness of sample surface is related to N/Ga ratio of depositing GaN barrier. Finally, we found the quality of PL signal become better with thinner InGaN/GaN QWs, and the intensity of PL spectrum was higher as well. Finally, we grow high quality InGaN/GaN QWs, the PL peak and FWHM(full width at half maximum) were 2.54 eV and 2.74 meV, respectively.

論文審定書 i
中文摘要 ii
英文摘要 iii
目錄 iv
圖 目錄 vi
表 目錄 viii
第一章 簡介 1
1.1前言 1
1.1.1三-氮族半導體之使用 2
1.1.2 氮化鎵結構 3
1.1.3 壓電效應(Piezoelectric polarization) 4
1.1.4 Quantum Confined Stark Effect, QCSE 5
1.2 研究動機 5
第二章 儀器原理 7
2.1 X光繞射儀( X-ray diffraction, XRD) 7
2.2光致螢光光譜(Photoluminescence, PL) 10
2.3 掃描式電子顯微鏡(Scanning electron microscope, SEM) 12
2.4反射式高能電子繞射儀(Reflection high-energy electron diffraction, RHEED) 14
2.5 原子力顯微鏡 (Atomic force microscope, AFM) 16
第三章 儀器設備與操作要點 18
3.1 X光繞射儀( X-ray diffraction, XRD) 18
3.1.1 Sealed tube與光學元件結構說明(如圖3-2) 19
3.1.2 Detector arm與2nd光學元件結構說明(如圖3-3) 20
3.1.3 磊晶薄膜量測步驟說明 22
第四章 實驗討論與結果 26
4.1 不同溫度下成長氮化銦鎵(InGaN) 27
4.1.1 不同氮化銦鎵成長溫度之XRD分析 28
4.1.2不同氮化銦鎵成長溫度之PL光譜分析 31
4.2 不同銦鎵比下成長氮化銦鎵 32
4.2.1不同銦鎵比下成長氮化銦鎵之XRD分析 33
4.2.2 不同銦鎵比下成長氮化銦鎵之PL光譜分析 34
4.2.3 不同銦鎵比下成長氮化銦鎵之AFM與SEM 表面分析 37
4.3 較薄氮化銦鎵量子井厚度之分析 41
4.3.1 不同氮化銦鎵量子井厚度造成之光性說明 41
4.3.2 較薄氮化銦鎵量子井厚度之分析 42
4.3.3 量子力學對量子井厚度之影響 44
4.3.4 樣品J之TEM結果 46
第五章 結論 48
第六章 參考文獻 50

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