本研究主要係利用氧化鋅奈米柱製備乙醇氣體感測器。藉由調變氧化鋅薄膜之沉積參數來製備出具有C軸優選取向之晶種層，並以水熱法於晶種層上沉積氧化鋅奈米柱之結構來提升其感測靈敏度。利用黃光微影及直流磁控濺鍍法於SiO2/Si基板上製作IDT感測器電極，再使用射頻磁控濺鍍法沉積氧化鋅晶種層及使用水熱法成長氧化鋅奈米柱，並藉由X光繞射儀與掃描式電子顯微鏡進行物性分析。
研究結果顯示，當元件在工作溫度150℃、乙醇氣體濃度為100 ppm時，其感測靈敏度約為67.8%；當氣體濃度提升至500 ppm時，其靈敏度約為93.65%。

In this study, the ethanol gas sensor was prepared by using zinc oxide nanorods. The zinc oxide seed layer with c-axis preferred orientation was prepared by modulating the deposition parameters of zinc oxide films. Then the zinc oxide nanorod structure was grown on the seed layer by using hydrothermal method, where the nanorod structure can enhance the sensing sensitivity. In this study, the interdigital transducer (IDT) electrodes were fabricated on SiO2/Si substrates by photolithography and DC sputtering system. Then, the zinc oxide seed layer was deposited by using RF magnetron sputtering and the zinc oxide nanorods were grown on the seed layer by using hydrothermal method. The crystalline structures and morphologies were examined by X-ray diffraction and field emission scanning electron microscope analyses, respectively.
According to the experimental results, it shows that the ethanol gas sensor exists 67.8% sensitivity when it works at the temperature of 150 ℃ and the ethanol gas concentration of 100 ppm. When the gas concentration increased to 500 ppm, the sensitivity was enhanced to 93.65%.

目 錄
論文審定書 i
誌謝 iii
中文摘要 iv
Abstract v
目 錄 vi
圖目錄 xi
表目錄 xiv
第一章 緒論 1
1-1 前言 1
1-2 氣體感測器與奈米結構 4
1-3 研究目的及內容 6
第二章 理論 7
2-1 氧化鋅的結構與特性 7
2-3 反應式射頻磁控濺鍍原理 12
2-3-1 輝光放電（Cathode glow discharge） 12
2-3-2 磁控濺鍍 14
2-3-3 射頻濺鍍 15
2-3-4 反應性濺鍍 15
2-4 薄膜成長機制 17
2-4-1 薄膜沉積階段 17
2-4-2 薄膜表面與剖面結構 20
2-5 氣體感測器感測原理 22
2-6 水熱法 24
2-7 比表面積 25
第三章 實驗方法及步驟 26
3-1 實驗步驟 26
3-2 晶圓清洗 30
3-3 阻擋層之成長 30
3-4 試片清洗 31
3-5 電極的製備流程 31
3-5-1 微加熱器及電極圖案定義 32
3-6 薄膜沉積 35
3-6-1 射頻磁控濺鍍系統 35
3-6-2 直流磁控濺鍍系統 37
3-7 水熱法製備流程 38
3-7-1 溶液之配製 39
3-7-2 以水熱法成長氧化鋅奈米柱 39
3-8 物性分析 39
3-8-1 X光繞射（X-ray Diffraction, XRD）分析 39
3-8-2 掃描式電子顯微鏡（Scenning Electron Microscopy, SEM）分析 41
3-9 電性量測 42
第四章 結果與討論 44
4-1 氧化鋅沉積參數分析 44
4-1-1 調變濺鍍功率之氧化鋅X光繞射分析 44
4-1-2 調變濺鍍功率之氧化鋅SEM分析 45
4-1-3 調變濺鍍壓力之氧化鋅X光繞射分析 47
4-1-4 調變濺鍍壓力之氧化鋅SEM分析 48
4-2 氧化鋅晶種層厚度分析 50
4-3 氧化鋅奈米柱參數分析 57
4-3-1 基板放置方式 57
4-3-2 前置溶液濃度之調變 59
4-3-3 水熱法成長時間之調變 62
4-3-3 水熱法成長溫度之調變 65
4-4 電性量測 68
4-4-1 感測器的工作溫度分析 68
4-4-2 不同製程參數之感測器分析 72
4-4-3 通入氣體濃度分析 80
第五章 結論 85
參考文獻 86

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