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博碩士論文 etd-0724115-145733 詳細資訊
Title page for etd-0724115-145733
論文名稱
Title
以雙壓電層研製固態微型諧振器
Fabrication of solidly mounted resonator using double piezoelectric layers
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
92
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2015-07-27
繳交日期
Date of Submission
2015-08-24
關鍵字
Keywords
氮化鋁、布拉格反射器、氧化鋅、退火、固態微型諧振器
ZnO, AlN, Bragg reflector, SMR, Anneal
統計
Statistics
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The thesis/dissertation has been browsed 5655 times, has been downloaded 31 times.
中文摘要
本研究主要以氧化鋅/氮化鋁結構研製雙壓電層固態微型諧振器,並將布拉格反射器進行熱退火處理,藉由原子力顯微鏡探討退火前後表面粗糙度的差異。此外,在雙壓電層薄膜特性分析中,本研究藉由 調變濺鍍功率及濺鍍壓力以獲得高C軸優選取向之氮化鋁及氧化鋅薄膜。最後藉由低粗糙度之布拉格反射器及雙壓電層結構研製出雙壓電層之固態微型諧振器。
在頻率響應方面,本研究以3.5對SiO2/Mo布拉格反射器搭配1 µm之AlN薄膜,並在上層沉積ZnO薄膜,成功製作出具雙操作頻率之雙壓電層固態微型諧振器。此外,隨著氧化鋅膜厚的增加,頻率響應的效果也越好,且搭配底層具高波速特性的AlN薄膜,可有效提升元件的操作頻率。
Abstract
In this study, the ZnO/AlN structure is adopted to fabricate the solid mounted resonators (SMR) with double piezoelectric. The variation of the surface roughness of bragg reflector after thermal annealing process is measured by AFM.
In order to obtain the highly c-axis oriented AlN and ZnO thin films, various sputtering parameters are controlled to improve the crystalline characteristics of AlN and ZnO thin films. Then, double piezoelectric layers are constructed on Bragg reflector of low roughness to fabricate SMR.
Finally, the SMRs with dual mode resonant frequencies can be obtained by using 3.5 pairs SiO2/Mo Bragg reflector and ZnO thin films deposited on AlN thin films of 1 µm. The increase of ZnO thickness can improve return loss. The AlN thin films are adopted as bottom piezoelectric layers which can promote the operation frequency of SMRs.
目次 Table of Contents
審定書 ............................................................................................................................... i
致謝……………………………………………………………………………………...ii
中文摘要 ........................................................................................................................ iiii
Abstract……………………………………………………………………………….…iv
目錄……………………………………………………………………………………...v
目錄…………………………………………………………………………………....viii
表目錄…………………………………………………………………………………..xi
第一章 前言 1
1.1 研究背景與動機………………………………………………………………1
1.2 薄膜體聲波諧振器之簡介……………………………………………………2
1.3 研究內容………………………………………………………………………6
第二章 理論分析 9
2.1 壓電現象 7
2.1.1 壓電效應 8
2.1.2 壓電材料. 10
2.2 氧化鋅的結構與特性 11
2.3 氮化鋁的結構與特性 14
2.4 鉬(Molybdenum, Mo)的結構與特性 17
2.5 二氧化矽(Silicon dioxide, SiO2)的結構與特性 17
2.6 反應性磁控濺鍍原理…………………………………………………..……18
2.6.1 輝光放電………………………………………………………….……18
2.6.2 磁控濺鍍…………………………………………………………..…...19
2.6.3 射頻濺鍍…………………………………………………….……..…..20
2.6.4 反應性濺鍍………………………………………………………….....21
2.7 薄膜沉積原理………………………………………………………………..22
2.8 SMR理論…………………………………………………………………….24
2.8.1 布拉格反射器………………………………………………………..…24
2.8.2 SMR的基本設計………………………………………………………...25
第三章 實驗方法與步驟 28
3.1 實驗流程 28
3.2 基板清洗 29
3.3 直流與交流濺鍍系統與薄膜沈積..............................................................30
3.4 射頻濺鍍系統與薄膜沉積……………………………………………..……34
3.5 黃光微影製程………………………………………………………………..37
3.6 SMR 製作流程……………………………………………………………….39
3.6.1 反射層膜厚計算公式……………………………………………………...41
3.7 薄膜特性分析……………………………………………………………..…42
3.7.1 X-ray繞射分析…………………………………………………………42
3.7.2 掃描式電子顯微鏡(Scanning electron microscopy, SEM)分析………44
3.7.3 原子力測量顯微鏡(Atomic Force Microscopy, AFM)分析………..…44
3.7.4 RTA熱處理………………………………………………………….….45
3.8 元件測量……………………………………………………………………..46
3.9 本研究所採用之元件參數………………………………………………..…46
第四章 結果與討論 47
4.1反射層的探討 47
4.1.1 Mo薄膜最佳濺鍍參數…………………………………………………47
4.1.2 SiO2 薄膜最佳濺鍍參數………………………………………………50
4.1.3 最低粗糙度濺鍍參數之反射層……………………………………….50
4.2 布拉格反射器經熱退火處理前後表面粗糙度之差異 53
4.3 AlN調變製程參數之物性探討 58
4.3.1 濺鍍功率……………………………………………………………….58
4.3.2 濺鍍壓力…………………………………………………………….…61
4.4 ZnO調變製程參數之物性分析 64
4.4.1 濺鍍壓力 64
4.4.2 濺鍍功率 67
4.5 SMR之量測結果 70
第五章 結論 74
參考文獻 75
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