隨著封裝技術不斷的進步以及現代社會對封裝產品的需求量與日俱增，封裝產品已經在電子產品的應用中隨處可見，因此封裝技術成為了IC工業界中重要的課題之一。然而熱壓銅柱覆晶封裝為目前較新的封裝製程之一，其銅柱與錫球組成的接腳取代了單一錫球的接腳，因此銅柱的細長結構使得相同晶片體積能夠容納的I/O數量較傳統單一錫球來的多，因此能夠使同樣大小的晶片容納更複雜的電路以及具有更多的功能。但是目前封裝產業中對於熱壓銅柱覆晶封裝的製程參數以及其變形機制並不是那麼的了解，因此還有很多值得探討及研究的地方。
本研究利用有限元素模擬軟體DEFRORM-3D進行熱壓銅柱覆晶封裝製程模擬，模擬製程中錫球塑性變形情形並探討錫球、銅線、銅柱的應力應變分布情形，此外，本研究也針對錫球與銅線之間的接觸面積做系統性的探討，因為錫球與銅線的接觸面積是影響導電性甚至是產品好壞的判斷基準之一，因此藉由錫球與銅線的接觸面積跟銅柱-銅線間隙的關係也可以定義出較佳的銅柱-銅線間隙範圍。另外本研究也透過熱壓銅柱覆晶封裝實驗驗證有限元素模型的正確性以及準確性，並針對銅柱-銅線間隙與結合力量之關係進行探討，最後依據模擬結果建立結合力量、製程溫度以及銅柱-銅線間隙之經驗公式供給產線應用或當作判斷準則。

With advanced packaging technology and due to increasing demands in packaged products, packaged products have been applied in many electronic appliances in our daily life. Therefore, packaging technology has been an important issue in IC manufacturing industries. Thermal compression bonding (TCB) of copper pillar flip chip packages is a new bonding process in packaging technology. Its characteristics are the reduction of the solder volume and providing more I/O ports to increase the complexity capability of the circuits in the chip with more features. However, the formation mechanisms for TCB of Cu pillar flip chip package have not been investigated thoroughly.
In this study, a finite element code DEFORM-3D is used to analyze the plastic deformation of the solder ball and stress and strain distributions of Cu pillar and Cu trace. Contact area between solder ball and the Cu trace, which probably leads to bad conductance and even eventually the failure of the package are systematically discussed. The relationships between solder thickness and the contact area are the indicators to define optimum thickness. On the other hand, some experiments are done to verify the correctness of the finite element model. These simulation and experimental results can be used to design the layout or the configurations of the Cu pillars and Cu traces and determine the optimized forming parameters. Finally the relationship between total force, solder thickness and temperature are developed into a formula which is helpful for production line to apply in other productions.

論文審定書 i
誌謝 ii
摘要 iii
Abstract iv
圖目錄 vii
表目錄 x
符號說明 xi
第一章 緒論 1
1-1 前言 1
1-2 電子封裝技術簡介 3
1-2-1 電子封裝的種類 3
1-2-2 電子封裝的層次 5
1-2-3 電子元件與電路板接合方式 6
1-2-4 晶片與基板連接方式 7
1-3 熱壓銅柱覆晶封裝之簡介及應用 12
1-3-1 銅柱凸塊的發展 12
1-3-2 銅柱覆晶封裝及熱壓製程之簡介 12
1-3-3 銅柱覆晶封裝之應用 14
1-4 文獻回顧 14
1-4-1 與傳統覆晶封裝技術相關之文獻 14
1-4-2 與銅柱覆晶封裝技術相關之文獻 15
1-4-3 焊錫材料機械性質及經驗公式相關之文獻 17
1-5 研究動機與目的 17
1-6 論文架構與研究流程 18
第二章 熱壓銅柱覆晶封裝製程之有限元素分析 20
2-1 前言 20
2-2 熱壓銅柱覆晶封裝製程之有限元素分析 22
2-2-1 有限元素分析軟體DEFORM簡介 22
2-2-2 結構尺寸之建立 23
2-2-3 基本假設及參數設定 25
2-3 下銅柱結構與長條型銅線之解析結果 29
2-3-1 不同結構對錫球變形之影響 29
2-3-2 不同結構對力量之影響 30
2-3-3 不同結構對錫球與銅線(下銅柱)接觸面積之影響 31
2-3-4 應力分布情形 32
2-4 長條形銅線結構不同溫度之模擬結果 34
2-4-1 錫球與銅線接觸面積之探討 35
2-4-2 錫球成型形狀之探討 38
2-4-3 銅柱-銅線間隙與力量的關係 41
2-4-4 應力應變分布情形 42
2-5 長條形銅線結構晶片相對基板偏移之模擬結果 47
2-5-1 偏移對錫球成形之影響 49
2-5-2 偏移對力量之影響 52
2-5-3 偏移對錫球與銅線接觸面積之影響 53
2-6 改變長條形銅線尺寸之模擬結果 55
2-6-1 銅柱直徑及銅線寬度比定義 55
2-6-2 錫球成型形狀之探討 56
2-6-3 銅柱-銅線間隙與力量的關係 58
2-6-4 錫球與銅線接觸面積探討 59
第三章 熱壓銅柱覆晶封裝之實驗與分析 61
3-1 熱壓銅柱覆晶封裝之實驗 61
3-1-1 實驗目的 61
3-1-2 實驗設備與實驗材料 61
3-1-3 實驗參數設定 62
3-1-4 實驗步驟與流程 63
3-2 實驗結果與解析結果比較 66
3-2-1 錫球成形形狀之比較 66
3-2-2 銅柱-銅線間隙與力量之比較 74
第四章 經驗公式之建立 76
4-1 力量、溫度與銅柱-銅線間隙關係之經驗公式建立 76
4-1-1 非線性回歸模型 76
4-1-2 最小方差擬合法 77
4-1-3 溫度相關之參數 77
4-1-4 無因次化及結果 79
4-2 各個溫度達到最大接觸面積所需力量之經驗公式 85
第五章 結論 88
5-1 熱壓銅柱覆晶封裝之模擬解析結果 88
5-2 實驗與模擬結果比較 89
5-3 經驗公式之建立 90
5-4 今後研究之課題 90
參考文獻 91

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