本實驗採用耐熱性質較佳的聚醯亞胺（Polyimide，PI）基板，使用熱蒸鍍法製備Sb2Te3薄膜於基板上，探討基板升溫及銀摻雜對Sb2Te3薄膜特性的影響，並進行熱退火處理，比較不同製程條件下之熱電特性。
由SEM表面形貌與X光繞射分析顯示，在室溫下沉積的薄膜，呈現非晶狀態；隨著基板溫度增加，薄膜結晶性強度變強，缺陷減少使得載子濃度降低，因此，Seebeck係數呈現上升及導電率下降之趨勢；當基板溫度到達125ºC時，具有最佳之功率因子為3.57μW/cmK2，而以金屬Ag原子 做摻雜，於基板溫度125°C、Ag摻雜量為5.37%時，具有最佳之功率因子為4.70μW/cmK2。
在熱退火處理後，可發現未摻雜Ag的Sb2Te3薄膜，在基板溫度125°C，退火250°C及退火時間60分鐘的情況下有最好的功率因子為14.62μW/cmK2；在摻雜銀的部分，實驗結果顯示在基板溫度125°C，退火溫度200°C及時間60分鐘的情況下，可得到最佳功率因子約為10.24 μW/cmK2。

In this study, the Sb2Te3 thermoelectric thin films were deposited on polyimide substrates by thermal evaporation method. The effects of substrate temperature and Ag doping on the microstructures and thermoelectric properties of Sb2Te3 thin films were investigated. Besides, the annealing processes were carried out to investigate the characteristics of the thermoelectric films.
The structures of the thin films were analyzed by XRD and SEM, respectively. The thin films deposited at room temperature showed an amorphous phase. As the substrate temperature was increased, the XRD intensity of Sb2Te3 thin films increased and the defects and carrier mobility were reduced. Therefore, the Seebeck coefficient increased and the conductivity decreased at first. The optimized power factor of the Sb2Te3 p-type thin films was found to be about 3.57 μW/cmK2 at the substrate temperature of 125°C. For the Sb2Te3 thin films with Ag doping, the maximized value of power factor of 4.07 μW/cm·K2 could be obtained at the doping concentration of 5.37wt%, and the substrate temperature of 125°C.
After the thermal annealing processes, the results showed that the maximized value of power factor of 14.62 μW/cmK2 for undoped Sb2Te3 thin films could be obtained at substrate temperature of 125°C and annealing temperature of 250°C (60 minutes). In the Ag-doped Sb2Te3 thin films, the results showed that the maximized value of power factor of 10.24 μW/cmK2 could be obtained at substrate temperature of 125°C and annealing temperature of 200°C (60 minutes).

中文審定書 i
英文審定書 ii
誌謝 iii
摘要 iv
Abstract v
目錄 vii
圖目錄 x
表目錄 xvi
第一章 緒論 1
1.1 前言 1
1.2 熱電材料應用 3
1.2.1 熱電溫度控制 4
1.2.2 人造衛星之熱電轉換 5
1.2.3 人體發電與可撓式元件 6
1.2.4 熱能充電家具 6
1.3 研究動機與目的 7
第二章 理論分析與文獻回顧 11
2.1 熱電理論 11
2.1.1 Seebeck效應 11
2.1.2 Peltier效應 12
2.1.3 Thomson效應 13
2.2 熱電材料物理特性 15
2.2.1 熱電優值(thermoelectric figure of merit, ZT) 15
2.2.2 熱電轉換效率 18
2.3 文獻回顧 20
第三章 實驗方法與步驟 23
3.1 實驗步驟 23
3.2 實驗流程 24
3.2.1 基板的製備與清洗 24
3.2.2 氧電漿清洗 25
3.2.3 Sb2Te3薄膜於不同蒸鍍電流及熱退火之熱電特性探討 26
3.2.4 Sb2Te3薄膜於不同基板溫度及熱退火之熱電特性探討 28
3.2.5 Sb2Te3和Ag共蒸鍍薄膜及熱退火之熱電特性探討 29
3.3 實驗儀器介紹 31
3.3.1 熱蒸鍍機原理及介紹 31
3.3.2 高溫爐管 33
3.3.3 X光粉末繞射儀(X-ray diffractometer，XRD) 34
3.3.4 掃描式電子顯微鏡(Scanning Electron Microscope，SEM) 35
3.3.5 X光能譜散射分析儀(Energy Dispersive X-ray Spectroscopy，EDS) 36
3.3.6 Seebeck係數量測 37
3.3.7 電阻率量測 38
第四章 結果與討論 40
4.1 Sb2Te3原始材料之特性分析 40
4.2 Sb2Te3薄膜特性之探討 41
4.2.1 Sb2Te3薄膜於不同蒸鍍電流之物性分析 41
4.2.2 Sb2Te3薄膜於不同蒸鍍電流之電性分析 46
4.3 改變基板沉積條件對Sb2Te3薄膜特性之探討 49
4.3.1 Sb2Te3薄膜於不同基板溫度下之物性分析 49
4.3.2 Sb2Te3薄膜於不同基板溫度下之電性分析 54
4.4 Ag摻雜對Sb2Te3薄膜特性之探討 57
4.4.1 改變Ag共蒸鍍的電流對Sb2Te3薄膜之物性分析 57
4.4.2 改變Ag共蒸鍍的電流對Sb2Te3薄膜之電性分析 62
4.5 熱退火製程對Sb2Te3薄膜特性之探討 65
4.5.1 蒸鍍電流60A之Sb2Te3薄膜熱退火 65
4.5.2 於基板溫度125ºC熱退火製程對Sb2Te3薄膜特性影響之探討 73
4.5.3 於基板溫度125ºC，熱退火製程對Ag摻雜Sb2Te3熱電薄膜之探討 88
第五章 結論 103
參考文獻 104

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