本研究使用氮化鋁薄膜沉積於鉭酸鋰基板上以研製雙壓電層表面聲波元件，並藉由調控濺鍍參數以獲得c軸優選取向之AlN薄膜。AlN薄膜之結晶特性及形貌結構經由SEM、XRD、AFM及Rocking curve分析後，可得到平坦表面、高結晶性、晶粒大小一致之AlN薄膜，其AlN薄膜最佳濺鍍參數為濺鍍功率270 W、濺鍍壓力5 mTorr、基板溫度300℃及氮氣分率60%。此外，本研究分別探討不同膜厚的AlN薄膜對表面聲波元件特性之影響。由實驗結果得知，隨著AlN薄膜的增厚，元件中心頻率由129.88 MHz提升至131.275 MHz，故推得元件整體之波速由4156.2 m/sec提升至4200.1 m/sec，其頻率溫度係數由-43.21 ppm/°C變為-54.65 ppm/°C。雖然表面聲波的波速會隨著AlN薄膜厚度而增加，但頻率溫度係數會變差，故在兩者之間需取個平衡點。

In this study, surface acoustic wave (SAW) devices were fabricated by aluminum nitride (AlN) thin films deposited on lithium tantalite (LiTaO3) substrates. The highly c-axis oriented AlN thin films could be obtained by controlling the sputtering parameters and their crystalline characteristics and surface morphologies were measured by SEM, XRD, AFM and rocking curve analysis. The optimal deposition conditions of AlN thin films were RF power of 270W, sputtering pressure of 5mTorr, substrate temperature of 300°C and nitrogen concentration (N2/N2+Ar) of 60%, respectively.
In addition, the SAW devices with various thicknesses of AlN thin films were studied. Experimental results revealed that, the central frequency increased from 129.88 MHz (Vp=4156.2 m/sec) to 131.275 MHz (Vp=4200.1 m/sec), and the temperature coefficient of frequency (TCF) also changed from -43.21 ppm/°C to -54.65 ppm/°C as the thickness of AlN thin films increased. With thickness of AlN thin films increasing, the acoustic velocity of SAW devices were improved, but TCF became worse. Therefore, the balance should be found between these two tendencies.

中文審定書 i
英文審定書 ii
誌謝 iii
摘要 iv
Abstract v
目錄 vi
圖目錄 ix
表目錄 xii
第一章前言 1
1.1 通訊市場 1
1.2 表面聲波元件 2
1.3 研究內容 6
第二章理論分析 7
2.1 壓電理論 7
2.1.1 壓電效應 8
2.1.2 壓電材料 9
2.2 氮化鋁結構與特性 11
2.3 LiTaO3結構與特性 14
2.4 濺鍍原理 15
2.4.1 輝光放電 15
2.4.2 磁控濺鍍 17
2.4.3 射頻濺鍍 17
2.4.4 反應性濺鍍 18
2.5 薄膜沉積原理 19
2.6 表面聲波元件之理論、設計與特性 21
2.7 雷利波 23
2.8 表面聲波元件分類 24
2.8.1 表面聲波共振器 24
2.8.2 表面聲波濾波器 26
2.9 表面聲波元件參數性質 28
2.9.1 傳波波速 28
2.9.2 插入損失 28
2.9.3 機電耦合係數 30
第三章實驗 31
3.1 實驗流程 31
3.2 基板清洗 32
3.3 以反應性射頻磁控濺鍍沉積氮化鋁薄膜 34
3.4 以直流磁控濺鍍系統沉積鋁電極 37
3.5 黃光微影製程 39
3.6 薄膜分析 42
3.6.1 X-ray繞射分析 42
3.6.2 Rocking curve 44
3.6.3 掃描式電子顯微鏡(Scanning electron microscopy, SEM)分析 45
3.6.4 原子力顯微鏡 47
3.6.5 網路分析儀 48
第四章 結果與討論 49
4.1 氮化鋁薄膜特性分析 49
4.1.1 濺鍍功率之影響 49
4.1.2 濺鍍壓力之影響 53
4.2 氮化鋁沉積於鉭酸鋰基板上之Rocking curve及AFM分析 57
4.3 表面聲波元件之頻率響應 59
4.3.1 以LiTaO3研製SAW元件之頻率響應 59
4.3.2 以AlN/LiTaO3研製SAW元件之頻率響應 60
第五章 結論 63
參考文獻 65

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