本研究主要以氧化鋅薄膜作為壓電層以製作固態微型諧振器，並採用鉬(Mo)及二氧化矽(SiO2)做為布拉格反射層材料。另一方面，製作四種不同電極圖形分別為橢圓形、不規則五邊形、圓形及方形，以應用於一至四對布拉格反射器上，探討不同電極圖形及不同對數布拉格反射器對於SMR元件頻率響應之影響。在薄膜特性分析中，藉由調變濺鍍壓力及濺鍍功率以獲得高C軸優選取向之氧化鋅薄膜。
由SMR元件頻率響應量測分析結果，顯示方形電極圖形配以四對布拉格反射器之SMR元件，在2.3 GHz處有明顯諧振現象，也顯示本實驗中所製作之鉬、二氧化矽及氧化鋅薄膜適合製作SMR元件。然而，結果亦顯示於主要諧振更高頻處也有一諧振頻率響應，為了探討此一諧振響應原因，本論文將製作完成元件，進行SEM剖面分析，並與文獻相互驗證，發現乃因布拉格反射器厚度之均勻度對於SMR元件之頻率響應所產生之影響。

In this study, zinc oxide (ZnO) film was used to fabricate the solid mounted resonator (SMR) devices. The Bragg reflectors where achieved by mult-layered Mo and SiO2 with one to four pairs. Various electrode patterns like ellipse, irregular, pentagonal, circular and square were designed and fabricated respectively. The effects of different electrode patterns and different layers of Bragg reflector on the frequency response of SMR devices were investigated. The c-axis preferred orientation of ZnO thin films were obtained by adjusting the sputter pressure and power.
From the results of frequency response analysis of SMR devices, the devices which had four pairs Bragg reflectors and square shaped electrode pattern had a significant resonance at 2.3 GHz. The results showed that the obtained Mo, SiO2 and ZnO thin films were suitable for the fabrication of SMR devices. However beyond the main resonance, there existed a resonant frequency response at higher frequency. In order to find out the reason, the devices were analyzed by SEM cross section of SMR devices and confirmed mutually with the literatures. According to the experiment at results, the uniformity of thickness of Bragg reflector will influence the frequency response of SMR devices.

中文審定書 i
英文審定書 ii
誌謝 iii
摘要 iv
Abstract v
目錄 vi
圖目錄 ix
表目錄 viii
第一章 前言 1
1.1 研究動機 1
1.2 薄膜體聲波諧振器之簡介 2
1.3 研究內容 5
第二章 理論分析 7
2.1 壓電現象 7
2.2 壓電效應 8
2.3 薄膜特性分析 10
2.3.1 鉬 (Molybdenum, Mo)結構與特性 10
2.3.2 二氧化矽(Silicon dioxide, SiO2)結構與特性 10
2.3.3 鉑(Platinum, Pt)結構與特性 10
2.3.4 氧化鋅(Zinc Oxide, ZnO)結構與特性 11
2.4 反應性射頻磁控濺鍍原理 14
2.4.1 輝光放電 14
2.4.2 磁控濺射 15
2.4.3 射頻濺射 17
2.4.4 反應性濺鍍 18
2.4.5 薄膜沉積機制 19
2.5 SMR 理論 21
2.5.1 SMR 的特點 22
2.5.2 SMR 的基本設計 22
第三章 實驗與步驟 26
3.1 實驗流程 26
3.2 基板清洗 27
3.3 直流濺鍍系統與薄膜的沉積 29
3.4 反應性射頻磁控濺鍍與壓電薄膜的沉積 35
3.5 黃光微影製程 37
3.6 SMR 的製作流程 40
3.6.1 反射層的製作 40
3.6.2 壓電層的製作 40
3.7 薄膜的特性分析 43
3.7.1 X光繞射(X-Ray Diffraction,XRD)分析 43
3.7.2 掃描式電子顯微鏡(Scanning electron microscopy, SEM)分析 45
3.7.3原子力顯微鏡(Atomic Force Microscopy,AFM)分析 46
3.8元件設定參數 49
3.9元件電性量測 49
第四章 結果與討論 50
4.1 布拉格反射層 50
4.1.1 鉬薄膜最佳濺鍍參數 51
4.1.2 二氧化矽薄膜最佳濺鍍參數 52
4.2 壓電層的探討 52
4.2.1 濺鍍壓力 53
4.2.2 濺鍍功率 57
4.3 SMR 元件頻率響應量測 61
4.4 SMR 第二諧振探討 68
第五章 結論 70
參考文獻 72

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