本篇論文主要是探討藍光發光二極體(LED)在不同層數的量子井下，其顯微結構對發光效率影響之研究。在本文中，學生分別對單層量子井、五層量子井、十層量子井、及三十層的量子井作一個分析與比較說明，發現不同層數的量子井將形成不同的相分離(Phase Separation)與應變(Strain)現象，而這些現象都將影響薄膜的發光效率品質，故本論文將主要集中在：(1.)不同量子井層數的相分離現象，產生不同的富銦(In-rich)效應與(2.)不同的應變(Strain)現象產生不同的差排(Dislocation)效應等兩者對發光二極體之發光效能影響作詳細的探討。依實驗結果發現隨著銦含量增加，差排與V-型缺陷將愈容易形成，且在高銦含量之下，富銦相團族結構密度明顯的增多並且擴散到氮化鎵層內，使得原先的量子井結構被破壞，如此亦將使其發光性質改變。另發現在成長較厚的氮化銦鎵量子井中，將產生囤積較大的應變能，薄膜中為了要釋放這些應變能，於是將會產生較大的缺陷結構，這些具有較高缺陷密度的薄膜，經過光學量測後發現其發光強度明顯降低。而對於成長不同層數薄膜時，我們可由原子力電子顯微鏡量測中發現；當量子井層數愈高時，其表面的粗糙度將愈明顯。由此可知當成長愈高的量子井厚度時，其對發光性質之影響將愈大。在本論文的研究結果中發現當薄膜成長中之量子井層數介於5層~10層之間時，將會有較好的光學性質。

The thesis mainly probes into the effects that the structure below multi quantum layer as regards the efficiency of luminescence of blue light LED in the different number layers and make further comparison. In the article, the students separately make analysis and comparison to the single quantum well , five multi quantum wells , ten multi quantum wells and thirty multi quantum wells. And discovered that different number layers of quantum well will occur different Phase Separation and Strain in the film. So the article mainly focuses on : (1.)Phase Separation in various of quantum well, it occurs different In-rich reaction and (2.)Different Strain levels which occurs different dislocation reaction. The two mechanisms will be discussed in detail with the effects of luminescence reaction of LED.

According to the results of experiment, We found that it is easier to form V-shape defects and dislocation with the increasing indium content. Under the high indium content, the density of In-rich will increase obviously and spread to the GaN barrier, then the original structure of quantum well will be destroyed and descend the efficacy of luminescence. In the thicker GaInN quantum well, it will induce larger energy of strain inside the film, So the defect density will increase due to release the strain energy. It was also discovered the intensity of luminescence descend after measuring by PL. When grow different number layers , it was discovered that higher quantum layer will produce the roughness surfaces when using AFM . So the higher quantum layers will make greater influence in the efficacy of luminescence. By experiment, we found that the five to ten quantim wells will have the better photo characteristic.

中文摘要…………………………………………………………Ⅰ
英文摘要…………………………………………………………Ⅲ
誌謝………………………………………………………………Ⅴ
目錄………………………………………………………………Ⅶ
圖錄………………………………………………………………ⅩⅠ

第一章 前言
1.1發光二極體發展概況…………………………………………1
1.1.1發光二極體的優點…………………………………………2
1.1.2發光二極體之注入機構……………………………………3
1.2氮化鎵藍光二極體發展現況…………………………………3
1.2.1藍光發光二極體研製動機…………………………………5
1.2.2氮化鎵材料概述……………………………………………6
1.2.3氮化鎵系列的N型與P型摻雜………………………………7
1.2.4雙異質接面結構可提高發光效率…………………………8
1.3研究動機………………………………………………………8

第二章 氮化銦鎵量子井結構特性
2.1相分離現象……………………………………………………12
2.1.1增幅分解反應………………………………………………12
2.1.2銦偏析現象…………………………………………………15
2.2量子井結構差排現象…………………………………………16
2.3溫度效應對量子井結構的影響………………………………20
2.4銦含量效應……………………………………………………22
2.5壓電效應對氮化鎵量子井結構的影響………………………23
2.6量子侷限效應…………………………………………………26

第三章 實驗設備與檢測方法
3.1實驗樣品製程…………………………………………………39
3.1.1化學氣相沉積法(MOCVD)………………….………………39
3.1.2分子束磊晶製程(MBE)…………………………..……….41
3.2高解析穿透式電鏡試樣製作………………………..………42
3.3實驗設備…………………………………………......……43
3.3.1 X光繞設分析儀…………………………………......…43
3.3.2掃描式電子顯微鏡…………………........……………47
3.3.3原子力電子顯微鏡…………………………………………48
3.3.4高解析穿透式電子顯微鏡…………………………………49
3.3.5螢光激光量測器………………………..…………………52
3.4實驗架構………………………………………………………53

第四章 結果與討論
4.1銦偏析現象……………………………………………………62
4.1.1量子井層數效應…………………………………....……62
4.1.1.1 實驗樣品結構……………………………………….…62
4.1.1.2 不同量子井層數的變化之結果與討論….....………63
4.1.2銦含量效應……………….………………….....………65
4.1.2.1實驗樣品結構…………………................……65
4.1.2.2 不同銦含量的變化之結果與討論……….……………66
4.1.3量子井厚度效應……………………………………………67
4.1.3.1 實驗樣品結構………………………………….………67
4.1.3.2 不同量子井厚度的變化之結果與討論……….………67
4.2缺陷結構現象…………………......………………………68
4.2.1穿透式電子顯微鏡分析........………………........69
4.2.1.1 實驗樣品結構……………………………….…………69
4.2.1.2 穿透式電子顯微鏡分析之結果與討論…….…………69
4.2.2原子力電子顯微鏡分析……………………………………70
4.2.2.1 實驗樣品結構………………………………….....…70
4.2.2.2 原子力電子顯微鏡分析之結果與討論…….…………70
第五章 結論……………………………………………..………93
參考文獻……………………………………………….....……95

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