DLC 薄膜是被沈積在不同的基板( P-type 矽基板和ITO 基板)利用電沉積法在低電位下進行沉積薄膜，電解液為混合醋酸和去離子水的醋酸水溶液。此外我們改變不同的沉積參數包括電位、沉積溫度、溶液濃度，探討對DLC 薄膜的特性與品質的影響。另外，也探討薄膜沉積過程的成長機制並且我們也將改善沉積期間邊緣所引發之效應造成薄膜不均勻的現象。在特性的研究上，利用拉曼光譜分析儀（Raman Spectroscopy）、掃描式電子顯微鏡（SEM）來做分析，在ITO 基板的拉曼光譜分析顯示D peak 和G peak 分別位於1358cm-1 和1580cm-1 處，分別為DLC 薄膜的特徵峰；由SEM 的分析，可分別觀察DLC 薄膜成長的均勻度及表面結構，成長最好品質的DLC 薄膜。最後在P-type 矽基板上沉積掺雜N-type 的DLC 薄膜形成形成異質接面二極體且也獲得MIS結構裡DLC薄膜本身所做為的絕緣層，目前異質接面二極體與MIS 元件的電性特徵，在未來還有待我們討論。

Diamond-Like Carbon (DLC) films have been deposited on different substrates such as p-type Silicon substrate and ITO glass substrate. DLC thin film was electrodeposited at low DC potential using a mixture of acetic acid and DI water. The DLC film deposition parameters include DC potential, deposited temperature, solution concentration, are used to study the characteristics of DLC film in detail. In addition, the growth mechanism of deposition process is also discussed. We are to improve and to solve the edge induced effect on inhomogeneous film thickness during electrodeposition. The Raman spectra shows two peaks located near 1358cm-1 and 1580cm-1, assigned as the characteristics peaks of DLC films. That is an evidence for DLC film deposited successfully on ITO glass and Silicon substrates. Scanning electron microscopy (SEM) can make insight into accurately the surface morphology and uniformity of DLC films so as used to grow the best quality of DLC films. Finally, N-type of doped DLC films has been achieved on p-type silicon substrate to form the hetero-junction diode, and the intrinsic DLC film acts as the insulating layer for MIS structure is also obtained. The electrical characteristics of hetero-junction diode and MIS devices are presented and to be discussed in future.

致謝 Ⅰ
摘要 Ⅱ
Abstract Ⅲ
目錄 Ⅳ
圖目錄 Ⅶ
表目錄 ⅩⅣ
第一章 緒論 1
1-1前言 1
1-2研究目的 2
1-3論文架構 3
第二章 理論基礎 4
2-1 DLC文獻回顧 4
2-2 DLC的理論 5
2-2-1 DLC的組成 5
2-2-2 DLC的結構 8
2-2-3 DLC的特性與應用 9
2-3 DLC成長機制 10
2-3-1電沉積的起源 10
2-3-2薄膜沉積現象 11
2-3-3長晶 12
2-3-4晶粒成長 13
2-3-5晶粒聚集 13
2-3-6縫道填補與薄膜的成長 14
2-4 MIS的理論 15
2-4-1 MIS元件結構 15
2-4-2 MIS 電容電壓特性 16
2-4-3 MIS缺陷型態與漏電流 19
第三章 實驗方法與儀器設備 24
3-1 實驗流程 24
3-2實驗材料與儀器設備 25
3-2-1 實驗材料 25
3-2-2 儀器設備 25
3-3實驗操作步驟 26
3-3-1 基板清洗步驟 26
3-3-2電沉積之操作步驟 27
3-4 量測儀器與其原理 28
3-4-1 拉曼光譜原理 28
3-4-2 類鑽碳膜之拉曼光譜量測 30
3-4-3 SEM量測原理 36
第四章 結果與討論 37
4-1 DLC薄膜的特性分析 37
4-1-1電壓之影響 37
4-1-2溫度之影響 39
4-1-3電解液濃度之影響 41
4-1-4活化能比較 44
4-1-5 掺雜濃度之影響 46
4-1-6 邊緣效應之影響 47
4-2 拉曼光譜分析 48
4-3 SEM 分析 51
4-4 MIS 的I-V 特性分析 52
第五章 總結 53
參考文獻 115

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