本實驗主要是以硒化製程製作太陽能電池的主吸收層CuInSe2，而在硒化製程以真空硒化和快速熱退火(RTP)硒化兩種製程進行。由於Cu/In 的堆疊，在室溫時就會有Cu-In 合金相的產生，造成組成不均，藉由鋁薄膜層來隔離銅、銦兩層間的接觸，以避免在合金相的形成，讓Cu/In 的前驅物在室溫下仍能保持元素狀態，進行反應後再探討其在CIS 薄膜內部成分組成均勻性之影響。實驗主要是以XRD、拉曼光譜來做CIS 薄膜中之相鑑定，以SEM 和EDS 來檢測表面形貌與組成均勻性。
實驗結果發現，真空硒化製程中，硒量的多寡是造成組成改變的主要因素，在Cu/In=1 時，其表面有較少的Cu-Se 相產生；在反應前與反應後比較，RTP 製程在整體銅銦比是比真空硒化來的穩定，反應過程中的損失較少，但內部組成均勻度較真空硒化差；加入鋁隔離層的CIS 在兩種製程所得的薄膜表面都有不錯的改善，有較平整的表面形貌，也能減少Cu-rich CIS 薄膜表面的Cu-Se 相產生，但內部組成均勻性卻都比未加鋁隔離層的CIS 薄膜差。

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摘要 I
目錄 II
附表目錄 IV
附圖目錄 IV
第一章 簡介 1
1.1前言 1
1.2 實驗目的 2
1.3太陽能電池原理 2
第二章 文獻回顧 4
2.1 CIS薄膜層的特性 4
2.2 本質缺陷對CIS的影響 4
2.3 CIS之前驅物(precursor) 5
2.4 硒化製程(selenization) 6
2.5 溫度對CIS的影響 7
2.6 RTP對CIS製作的影響 7
2.7 硒對薄膜CIS的影響 8
2.8 二次相對CIS的影響 9
2.8.1 Cu-Se相 9
2.8.2 In-Se相 9
2.9 前驅物合金相Cu-In對CIS的影響 10
第三章 實驗方法與步驟 11
3.1實驗流程 11
3.1.1 鈉玻璃基板準備 11
3.2 薄膜的鍍製 11
3.2.1薄膜層的濺鍍 12
3.2.2薄膜層的蒸鍍 13
3.3 CIS薄膜之製程 14
3.3.1 真空硒化製程 14
3.3.2 RTP硒化製成 14
3.4 薄膜分析方法 15
3.4.1 X光繞射分析(XRD) 15
3.4.2四點探針(Four-point probe) 15
3.4.3 掃描式電子顯微鏡(SEM) 16
3.4.4 拉曼光譜儀 16
3.4.5 EDS定量分析 17
3.4.6 反射光譜儀(Spectral reflectance measurement) 17
第四章 結果與討論 18
4.1 單層銅、鍈薄膜之分析 18
4.2 前驅物的鍍製 20
4.3 二次相之拉曼光譜 21
4.4 真空硒化製程 22
4.4.1 CIS製作 22
4.4.2 CIS中加入鋁隔離層 25
4.4.3 CIS摻鋁與否的比較 27
4.5 RTP製程 30
第五章 結論 33
第六章 參考文獻 35

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