本篇論文提出新架構磷化鎵/非晶矽/矽太陽能電池（GaP/a-Si:H/BulkSi solar
cell），利用能隙概念使得傳統磷化鎵/矽太陽能電池的開路電壓獲得改善。當磷化
鎵濃度提升時，會使能帶向下彎曲，使得載子容易被收集，提升短路電流密度。
且將非晶矽濃度上升時，能帶會向上彎曲，使得位能增加，進而提升開路電壓；
但是因為位能的增加，會使得載子傳輸受阻，使得短路電流密度大幅下降。因此，
將分別探討磷化鎵/非晶矽/矽之太陽能電池在高短路電流時與高開路電壓兩種情
況的特性。值得注意的是新電池的開路電壓在架構參數的最佳化之後可高達 0.758
V 以上，與傳統平面太陽能電池相比開路電壓增進 27.18 %。
此外，傳統磷化鎵/矽太陽能（GaP/BulkSi solar cell）電池中，還有許多細節
尚未被探討。因此本篇論文深入探討傳統使用寬能隙材料磷化鎵（Gallium
Phosphide, GaP）薄膜在矽晶圓上之太陽能電池（GaP/BulkSi solar cell）特性。由
於磷化鎵薄膜在短波 450 nm 以下的吸收率較好以及磷化鎵在矽基板上之反射率較
低的情況下，分別改善內部量子效率（Internal Quantum Efficiency, IQE）與外部量
子效率（External Quantum Efficiency, EQE），使得光子在太陽能電池內部更有效地
的被吸收而產生電子電洞對被收集，在與傳統平面矽基太陽能電池（PN_BulkSi
solar cell）相比可將短路電流密度提升 10 %。此磷化鎵在矽晶圓之太陽能電池最
佳化後可得：短路電流（Short-Circuit Current, J sc ）達 21.864 mA/cm
2 ，開路電壓
（Open-Circuit Voltage, Voc）為0.624 V，填充因子（Fill Factor, FF）在82.4 %，轉
換效率為11.236 %。

In this thesis, we propose a new structure of GaP/a-Si:H/BulkSi solar cell in which
the additional a-Si:H layer due to the concept of energy bandgap is used to improve the
open-circuit voltage. As the a-Si:H doping concentration is increased, the upward
bandgap bending is expected to be observed; hence, a high open-circuit voltage is
obtained. But in this situation, the upward bandgap bending also hinders the carrier
transport, leading a low short-circuit current density. It is worth noting that the proposed
solar cell can have a high open-circuit voltage of 0.758 V.
In addition, we carefully investigate the characteristics of wide-bandgap gallium
phosphide (GaP) material used for silicon-based solar cells. According to the simulated
results, the absorption of GaP is better than silicon with a wavelength below 450 nm.
Also, the GaP/BulkSi solar cell is shown to have a lower reflectivity value than the
conventional PN_BulkSi solar cell. Hence we can prove that the internal quantum
efficiency and external quantum efficiency are improved accordingly. As a result, the
short-circuit current density is increased about 10 %. In addition, the optimized
parameters of a GaP/BulkSi solar cell are as follows: the short-circuit current density is
21.264 mA/cm2, the open-circuit voltage is 0.624 V, the fill factor is 82.4 %, the
conversion efficiency is 11.236 %, respectively.

第一章 簡介 .............................................................................................................. 1
1.1 背景 ................................................................................................................... 1
1.2 太陽能電池種類與發展 ................................................................................... 2
1.3 文獻回顧 ........................................................................................................... 3
1.4 研究動機 ......................................................................................................... 12
第二章 太陽能電池理論與物理機制 .................................................................... 14
2.1 光電效應 ......................................................................................................... 14
2.2 光伏特效應 ..................................................................................................... 15
2.3 太陽能電池基本理論 ..................................................................................... 15
2.3.1 太陽輻射光譜 ...................................................................................... 15
2.3.2 太陽能電池產生電力之原理 .............................................................. 17
2.3.3 太陽能電池主要損失與重要參數 ...................................................... 20
2.4 復合機制 ......................................................................................................... 22
第三章 太陽能電池架構設計與製程 .................................................................... 25
3.1 傳統平面太陽能電池製程步驟 ..................................................................... 25
3.2 磷化鎵/矽太陽能電池製程步驟 .................................................................... 26
3.3 磷化鎵/非晶矽/矽太陽能電池製程步驟 ....................................................... 27
第四章 模擬結果與討論 ........................................................................................ 28
4.1 元件製程模擬之物理模型 ............................................................................. 28
4.2 元件製程模擬結果探討 ................................................................................. 30
4.2.1 傳統平面太陽能電池（PN_BulkSi solar cell） ................................ 30
4.2.2 磷化鎵/矽太陽能電池（GaP/Bulk Si solar cell） ............................. 34
4.2.3 磷化鎵/矽與傳統平面太陽能電池比較 ............................................. 39
4.2.4 磷化鎵/非晶矽/矽太陽能電池（GaP/a-Si:H/BulkSi solar cell） ...... 42
4.3 傳統平面太陽能電池、傳統磷化鎵/矽太陽能電池與新磷化鎵/非晶矽/矽太
陽能電池之比較 .................................................................................................... 54
第五章 總結 ............................................................................................................ 56
5.1 結論 ................................................................................................................. 56
5.2 未來展望 ......................................................................................................... 56
參考文獻 .................................................................................................................... 57

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