本研究利用原子層沉積系統 (ALD) 生長二氧化鈦薄膜於磷化銦基板上，作為蕭特基能障金氧半場效應電晶體元件 (Schottky barrier MOSFET) 之閘極氧化層。首先，對於現有二氧化鈦薄膜做品質改善的研究，使用原子沉積法的二氧化鈦與鋁的雙層結構來改善單層二氧化鈦氧化層。使用雙層結構可藉由氧化鋁自我清潔能力使得氧化層與基板界面得到更佳的改善，漏電流數值降至3.1 × 10-9 和 3.3 × 10-7 A/cm2 at ± 2.5 MV/cm。另外，未經硫化銨處理過的磷化銦基板與鋁金屬形成的蕭特基二極體結構，其蕭特基能障 (ΦBp)為0.806 eV，在經硫化銨處理過後，其蕭特基能障大幅上升至0.968 eV，意味會造成介面態密度的原生氧化層借由硫化銨處理去除，使得蕭特基能障不再受費米能階釘札(Fermi level pinning)的影響。關於蕭特基能障金氧半場效應電晶體元件的電性量測，其汲極電流 (Drain current) 為1.73 μA，對於單層二氧化鈦薄膜，會有汲極電流快速上升的現象，意味二氧化鈦薄膜有較小的崩潰電場。而在二氧化鈦與磷化銦基板間沉積氧化鋁薄膜，由於氧化鋁具有自我清潔 (self-cleaning) 與高崩潰電場的優點，亦可改善上述電流快速上升之現象。對於電性量測得到的結果比單層薄膜佳，汲極電流為1.37 μA 且沒有電流快速上升的現象，轉導值為 4.45×10-7 S/μm，移動率為202.3mm2/V-s 相較下有較佳的次臨界特性。與其他文獻比較，其導通能障 (ΦBn) 高度能高於一般金屬矽化物，所以限制了本身元件的特性，未來需對蕭特基接面做改善。

In this study, the thin titanium oxide (TiO2) film deposited on InP substrate was prepared by atomic layer deposition (ALD), which was used as gate oxide of InP Schottky barrier MOSFET. First, aluminum oxide (Al2O3) by ALD can be used as improvement in oxide of TiO2. Al2O3 of ALD has self-cleaning which can improve interface between oxide and substrate, the leakage current densities can reach 3.1 × 10-9 and 3.3 × 10-7 A/cm2. The Schottky barrier height(ΦBp) of Al/InP with (NH4)2S treatment is 0.968 eV, which is higher than that of Al/InP without (NH4)2S treatment (0.806eV). The (NH4)2S solution is a moderate etchant to reduce surface oxides on InP. Therefore, Schottky barrier will not be influenced by Fermi level pinning. The electrical characteristics of Schottky barrier MOSFET with TiO2 as gate oxide were measured in this report. The drain current is 1.73μA. The drain current increases rapidly when drain voltage is over 1V, it indicates that breakdown field of TiO2 thin film is not high enough. Due to advantages of ALD-Al2O3, such as self-cleaning ability and high breakdown field, the TiO2/Al2O3 prepared by ALD structure was used to improve the problem mentioned above. The electrical characteristics are much improved compared with a single TiO2 film, and drain current can reach 1.37 μA. The rapid increase of drain current with the increased drain voltage is not observed. The transconductance and mobility are 4.45 × 10-7 S/μm and 202.3 mm2/V-s, respectively, and a good sub-threshold behavior is obtained. Compared with other researches, we can find that Schottky barrier in on-state is higher than that of silicide sample. It indicates the InP Schottky barrier MOSFET characteristics are limited by high Schottky barrier.

ACKNOWLEDGMENT i
摘 要 ii
ABSTRACT iii
CONTENTS iv
LIST OF FIGURES vii
1.Introduction 1
1-1 Developments in Gate Dielectric 1
1-2 Properties of TiO2 3
1-3 Comparison of deposition methods of TiO2 4
1-4 Advantages of ALD 5
1-5 Drawback of TiO2 for MOSFETs 6
1-6 Drawbacks of SB on III-V compound 7
1-7 Mechanism and the structure model of InP and GaAs with sulfur treatment 9
1-8 ALD Al2O3/TiO2 on (NH4)2S treated III-V compound semiconductor structure 11
1-9 Principle of Schottky barrier 12
1-10 III-V Schottky Barrier MOSFET 13
1-10-1 Operation principle of the metal S/D n-MOSFETs 15
2.Experiments 27
2-1 Titanium oxide is prepared by MOCVD and ALD 27
2-1-1 CVD theorem 27
2-1-2 Deposition system of MOCVD and ALD 28
2-1-3 Properties of source materials 30
2-2 Structure procedures and film depositions 31
2-2-1 III-V wafer cleaning and sulfidation procedures 31
2-2-2 Preparation of Al2O3/ TiO2 stack films 32
2-2-2-1 Growth parameters of ALD-TiO2 film 32
2-2-2-2 Growth parameters of ALD-Al2O3 film 32
2-2-3 Aluminum metal and In-Zn alloy cleaning processes 33
2-2-4 Electrodes fabrication 33
2-2-5 Preparations of Al/ GaAs and Al/ InP Schottky diodes with (NH4)2S treatment 33
2-2-6 Preparations of Ag/GaAs and Ag/InP Schottky diodes with (NH4)2S treatment 34
2-3 Characterization 34
2-3-1 Physical Properties 34
2-3-2 Electrical Properties 35
3.Characterization of ALD Al2O3/TiO2 film on InP 45
3-1 TEM cross section of Al2O3/TiO2/S-InP structure 45
3-2 I-V characteristics of Al2O3/TiO2 Stacked Dielectrics on (NH4)2S treated InP 45
3-3 C-V characteristics of Al2O3/TiO2 Stacked Dielectrics on (NH4)2S treated InP 47
3-4 Conclusion 48
4.Characterizations of metal/ GaAs and metal/ InP Schottky diodes with (NH4)2S treatment 53
4-1 Electrical characteristics of with Al/GaAs and Al/InP with (NH4)2S treatment (Al/S-GaAs and Al/S-InP) 53
4-2 Electrical characteristics of Ag/GaAs and Ag/InP with (NH4)2S treatment (Ag/S-GaAs and Ag/S-InP) 54
4-3 Conclusion 55
5.Enhancement-mode n-channel Schottky barrier MOSFET with ALD-TiO2 as gate oxide on S-InP 64
5-1 Fabrication process of enhancement-mode n-channel Schottky barrier MOSFET with ALD-TiO2 as gate oxide on S-InP 64
5-2 Electrical characteristics of enhancement-mode Schottky barrier MOSFET with ALD-TiO2 as gate oxide on S-InP 65
5-3 Conclusion 70
6.Conclusions 87
Publication List 89
References 91

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