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博碩士論文 etd-0726107-014858 詳細資訊
Title page for etd-0726107-014858
論文名稱
Title
分子束磊晶之鎵氮流量比對氮化鎵表面特性的影響與分析
Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
65
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2007-07-02
繳交日期
Date of Submission
2007-07-26
關鍵字
Keywords
掃描式電子顯微鏡、氮化鎵、分子束磊晶
GaN, SEM, MBE
統計
Statistics
本論文已被瀏覽 5784 次,被下載 5298
The thesis/dissertation has been browsed 5784 times, has been downloaded 5298 times.
中文摘要
本文將討論分子束磊晶所成長氮化鎵結構的表面特性,我們唯一改變的條件為鎵氮分壓比。從高能反射式電子繞射圖觀察,我們發現所有樣品都是屬於2D模式成長,並且從掃瞄電子顯微鏡分析發現當鎵氮分壓比為0.13和0.18時樣品表面最為平整,從原子力顯微鏡計算表面粗糙度也可發現相同的結果。接下來觀察蝕刻後樣品表面,發現所有樣品都是屬於Ga-face。在X-ray繞射分析下可以判斷結晶程度的好壞,我們發現在鎵氮分壓比為0.13時有最小的螺旋式錯位密度;在鎵氮分壓比為0.18時有最小的所有錯位密度。我們試著尋找出良好表面形貌與良好結構兩者兼具的樣品成長參數。
Abstract
We mainly studied the morphology of GaN structures which were grown by plasma-assisted molecular beam epitaxy. The only condition we changed is Ga/N Ratio. Based on observation of reflection high energy electron diffraction (RHEED) patterns, we found all samples belong to two-dimensional (2D) growth mode. Also, based on scanning electron microscope (SEM) analysis, we found when Ga/N Ratio is 0.13 and 0.18, the surface of sample will be smoothest. Furthermore, based on the roughness result derived from atomic force microscope (AFM), we got the same result.

Then we observed the surface of samples after etching, we found all samples belong to Ga-face. Also, we can detect the degree of the state of mismatch under X-ray diffraction analysis. We found when Ga/N Ratio is 0.13, we got the lowest screw dislocation density; and when Ga/N Ratio is 0.18, we got the lowest overall dislocation density. In conclusion, we are trying to find sample growing parameters which could generate both better morphology and better structure.
目次 Table of Contents
中文摘要 3
英文摘要 4
第一章 前言 5

第二章 實驗基本原理
2-1 掃描式電子顯微鏡(SEM) 8
2-2 高能反射式電子繞射(RHEED) 12
2-3 原子力顯微鏡(AFM) 13
2-4 X-ray繞射分析 15
2-5 霍爾效應(Hall Effect) 17

第三章 實驗儀器與實驗步驟
3-1 掃描式電子顯微鏡(SEM) 19
3-2 原子力顯微鏡(AFM) 28
3-3 X-ray 繞射儀 32
3-4 室溫霍爾實驗 40


第四章 實驗分析與結果
4-1 實驗樣品說明 46
4-2 掃描式電子顯微鏡(SEM)與 48
高能反射式電子繞射(RHEED)
4-3 原子力顯微鏡(AFM) 55
4-4 X-ray繞射分析 58

第五章 結論 61

Reference 63
參考文獻 References
(1) S. Nakamura, M. Senoh, N. Iwasa, S.-I. Nagahama, T. Yamada, T. Matsushita, Y. Sugimto, and H. Kiyoku, Appl. Phys. Lett. 70, 1417 (1997)
(2) L. K. Li, J. Alperin, W. I. Wang, D. C. Look, and D. C. Reynolds, J. Vac. Sci. Technol. B 16, 1275 (1998).
(3) Feng Yun, Michael A. Reshchikov,Paolo Visconti, Keith M.Jones, Dongfeng Wang, Marc Redmond, Jie Cui, Cole W. Litton, and Hadis Morkoc, Mat. Res. Soc. Symp. Proc. Vol.639 (2001)
(4) Ikai Lo, K. Y. Hsieh, S. L. Hwang, L.-W. Tu, W. C. Mitchel, and A. W.
Saxler, Appl. Phys. Lett. 74, 2167 (1999).
(5) E. C. Piquette, P. M. Bridger, R. A. Beach, and T. C. McGill, MRS Internet J. Nitride Semicond. Res. 4S1, G3.77(1999)
(6) 汪建民,Materials Analysis 中國材料科學學會
(7) 吳建鋒,The growth and characterization of Si-doped GaN thin film and nanodots,碩士論文,中山大學(2003)
(8) 高鳴宏,Growth and characterization of AlxGa1-xN/GaN heterostructures,碩士論文,中山大學(2004)
(9) 陳光耀,Characterization of GaN/AlGaN heterostructures Grown by molecular beam epitaxy,碩士論文,中山大學(2005)
(10) 莊耿林,以霍爾效應量測法對氮化鎵半導體做電性分析,碩士
論文,中山大學(2002)
(11) E. Calleja, M.A. Sanchez-Garcia, F.J. Sanchez, F. Calle, F.B. Naranjo, E. Munoz, S.I. Molina, A.M. Sanchez, F.J. Pacheco, R. Garcia, Journal of Crystal Growth 201/202 (1999)
(12) X. Q. Shen, T. Ide, S.H. Cho, M. Shimizu, S.Hara, H.Okumura, S.Sonoda, S. Shimizu, Journal of Crowth 218 155-160(2000)
(13) Jenn-Kai Tsai, Ikai Lo, Keng-Lin Chuang, Li-Wei Tu, Ji-Hao Huang, Chia-Ho Hsieh, and Kung-Yu Hsieh, JOURNAL OF APPLIED PHYSICS, VOLUME 95, NUMBER 2 (2004)
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