本論文的太陽能電池與傳統的不同之處在於採用p-i-n的結構設計。由於In-rich CIS的高電阻率與低載子濃度兩種特性較接近本質半導體且其容易製作，在此我們使用In-rich CIS做為中間的本質層。
以Si wafer(100)做為p層、In-rich CIS做為i層、AZO做為n層。在無CdS緩衝層的情況下，改變In-rich CIS薄膜厚度而其他參數保持不變，當In-rich CIS薄膜厚度~500 nm，量測元件上In-rich CIS最接近定比線的位置可得到最佳參數，其參數分別為VOC=0.388V，JSC=8.85mA/cm2，FF=39.5%，並發現元件上In-rich CIS越接近定比組成的位置，元件照光後的I-V特性表現越好，當In-rich CIS超過臨界厚度時，元件照光後的I-V曲線趨向飽和。
In-rich CIS的高電阻率與Si wafer表面的SiO2造成較高的串聯電阻，估計是使元件的FF不理想的主因。

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1. 簡介 1
1.1 Why photovoltaics ? 1
1.2 太陽能電池的發展 2
1.3太陽能電池運作原理 4
1.4元件設計 5
1.4.1 異質接面 5
1.4.2 p-i-n結構 7
1.4.3 與現今發展技術接合 7
2. 材料特性 8
2.1 Al背電極與Si wafer 8
2.2 CIS吸收層 8
2.3 CdS緩衝層 10
2.5 ZnO:Al外窗層與Al上電極 11
3. 製程儀器與分析儀器 13
3.1 濺鍍系統 13
3.2 蒸鍍系統 13
3.3 穿透(吸收)光譜儀(UV/VIS/NIR spectrometer) 14
3.4 反射光譜儀 15
3.5表面輪廓儀(Depth Profiler) 15
3.6 X光繞射儀(XRD) 16
3.7 掃描式電子顯微鏡(SEM) 16
3.9 四點探針 17
3.10 熱探針 17
3.11 電流電壓(I-V)量測 17
4. 實驗製作方式 19
4.1基板 19
4.2 Al背電極 20
4.3 CIS主吸收層 20
4.4 CdS緩衝層 21
4.5 AZO外窗層與Al上電極 21
5. 實驗分析與討論 22
5.1 Al背電極與Si wafer 22
5.2 CIS主吸收層 22
5.3 CdS緩衝層 24
5.4 AZO外窗層與Al上電極 24
5.5 元件量測 25
6. 結論 28
參考文獻 29

1. 1. M. D. Archer, R. Hill, Clean Electricity from Photovoltaics, ImperialCollege Press (2001).
2. R. Corkish, A power that’s clean and bright, Nature. 416 (2002) 680-681.
3. D. Talbot, Nanocharging Solar, Technology Review. March/April, (2007) 48-50.
4. A.D. Compaan, Sol. Energy Mater. Sol. Cells 90 (2006) 2170–2180.
5. A. Goetzberger, C. Hebling, H. W. Schock, Mater. Sci. Eng. R 40 (2003) 1.
6. S. Baldwin, Office of Energy Efficiency and Renewable Energy, U.S. DOE. June 2, 2005 presentation available at:http://www.energy05.org/
7. S. U. Harin, et al. Polycrystalline thin film photovoltaics: Research,Development, and Technologies. IEEE. (2002) 472-477
8. N. G. Dhere, et al. Development of CIGS2 thin film solar cells,Materials Sciences and Engineering B, 116 (2005) 303-309
9. N. G. Dhere, Present status and future prospects of CIGSS thin filmsolar cells, Solar Energy Materials & Solar Cells, 90 (2006) 2181-2190
10. W. Shafarman, L. Stolt, in: A. Luque, S. Hegedus (Eds.), Handbook of Photovoltaic Science and Engineering, Wiley, New York, 2004.
11. O. Nast, T. Puzzer, C.T. Chou, M. Birkholz, Proc. of the 16th EPSEC Glasgow, UK, 2000, p. 292.
12. O. Nast, S.R. Wenham, J. Appl. Phys. 88 (2000) 124.
13. S. Narasimha, A. Rohatgi, A.W. Weeber, IEEE Trans. Electron Devices, 46 (7) (1999) 1363.
14. C.J.J. Tool, P. Manshanden, A.R. Burgers, A.W. Weeber Sol. Energy Mater. Sol. Cells 90 (2006) 3165.
15. F. Abou-Elfotouh, D. J. Dunlavy, T. J. Coutts, Sol. Cells, 27 (1989) 237.
16. T. Markvart, L. Castañer, Solar Cells: Materials, Manufacture and Operation, 1st edition, Elsevier, 2005, p. 309.
17. S.H. Wei, S.B. Zhang, J. Phys. Chem. Solids 66 (2005) 1994.
18. P. Migliorato, J.L. Shay, H.M. Kasper, S. Wagner, J. Appl. Phys. 46 (6) (1975) 1777.
19. R. Noufi, R. Axton, C. Herrington, S.K. Deb, Appl. Phys. Lett. 45 (6) (1984) 668.
20. H.R. Moutinho, D.J. Dunlavy, L.L. Kazmerski, R.K. Ahrenkiel, and F.A. Abou-Elfotouh, Conference Record of the IEEE Photovoltaic Specialists Conference, 1993, p 572.
21. T. Negami, Y. Hashimoto, S. Nishiwaki, Sol. Energy Mater. Sol. Cells 67 (2001) 331.
22. N.G. Dhere, Thin Solid Films 194 (1990) 757.
23. S.D. Kim, H.J. Kim, K.H. Yoon, J.S. Song, Sol. Energy Mater. Sol. Cells 62 (2000) 357.
24. M.E. Beck, A. Swartzlander-Guest, R. Matson, K. Keane, R. Noufi, Sol. Energy Mater. Sol. Cells 64 (2000) 135.
25. N.G. Dhere, K.W. Lynn, Sol. Energy Mater. Sol. Cells 42 (1996) 271.
26. M. Nishitani, T. Negami, T. Wada, Thin Solid Films 258 (1995) 313.
27. S. Niki, Y. Makita, A. Yamada, A. Obara, S. Misawa, O. Igarashi, K. Aoki, N. Kutasuwada, Jpn. J. Appl. Phys. 32 (Suppl. 32-3) (1993) 161.
28. K.T. Ramakrishna Reddy, R.B.V. Chalapathy, M.A. Slifkin, A.W. Weiss, R.W. Miles, Thin Solid Films 387 (2001) 205.
29. Sho Shirakata, Tomonori Murakami, Tetsuya Kariya, and Shigehiro Isomura, Jpn. J. Appl. Phys. 35 (1996) 191.
30. M.A. Contreras, B. Eggas, K. Ramanathan, J. Hiltner, A. Swartzlander, F. Hasoon, R. Noufi, Prog. Photovolt. 7 (1999) 311.
31. K. Senthil, D. Mangalaraj, Sa.K. Narayandass Appl. Surf. Sci. 169-170 (2001) 476.
32. M.A. Contreras, M.J. Romero, B. To, F. Hasoon, R. Noufi, S. Ward, K. Ramanathan Thin Solid Films 403-404 (2002) 204.
33. K.A. Jones, J. Crystal Growth 47 (1975) 235.
34. T. M. Friedlmeier, D. Braunger, D. Hariskos, M. Kaiser, H. N. Wanka, H. W. Schock, Proc. 25th IEEE PVSC, New York, 1996, p. 845.
35. J. Kessler, K. O. Velthaus, M. Ruckh, R. Laichinger, H. W. Schock, D. Lincot, R. Ortega,J. Vedel, Proc. 6th IPSEC, Oxford Publ., New Delhi, 1992, p. 1005.
36. J. Kessler, M. Ruckh, D. Hariskos, U. Rühle, R. Menner, H.W. Schock, Proc. 23rd IEEE PVSC, Louisville, KY, USA, 1993, p. 447.
37. K. Ramanathan, H. Wiesner, S. Asher, D. Niles, R. N. Bhattacharya, J. Keane, M. A. Contreras, R. Noufi, Proc. 2nd WCPEC, E. C. Joint Res. Centre, Luxembourg, 1998, p. 477.
38. T. Wada, S. Hayashi, Y. Hashimoto, S. Nishiwaki, T. Sato, M. Nishitina, Proc. 2nd WCPEC, E. C. Joint Res. Centre, Luxembourg, 1998, p. 403.
39. K. Orgassa, U. Rau, Q. Nguyen, H.W. Schock, J.H. Werner, Prog. Photovolt: Res. Appl. 10 (2002) 457.
40. R.J. Hong, X. Jiang, B. Szyszka, V. Sittinger, A. Pflug, Appl. Surf. Sci. 207 (2003) 341.
41. C.H. Lee, K.S. Lim, J. Song, Jpn. J. Appl. Phys. 36 (1997) 4418.
42. J.C. Lee, K.H. Kang, S.K. Kim, K.H. Yoon, I.J. Park, J. Song, Sol. Energy Mater. Sol. Cells 64 (2000) 185.
43. J. Müller, G. Schöpe, O. Kluth, B. Rech, B. Szyszka, T. Höing, V. Sittinger, X. Jiang, G. Bräuer, R. Geyer, P. Lechner, H. Schade, and M. Ruske, 17th European Photovoltaic Solar Energy Conf., 22–26 October, Munich, 2876–2879 (2001).
44. Y. Ogawa, A. Jager-Waldau, T. H. Hua, Y. Hashimoto, K. Ito, Appl. Surf. Sci. 92 (1996) 232-236.
45. N.G. Dhere, D.L. Wterhouse, K.B. Sundaram, O. Melendez, N.R. Parikh, J. Mater. Res. Sci. 6 (1995) 52.