本論文是以微光激發光譜系統(Micro-Photoluminescence)與時間解析光激螢光系統(Time-Resolved Photoluminescence)以及傅立葉轉換紅外光儀(Fourier Transform Infrared)為基礎，透過對奈米矽光學特性分析試圖對其發光機制做一探討。這批奈米矽樣品中均由氣體SiH4 以75.6 kcal/mol的能量與氣體N2O以101.5 kcal/mol的能量以電漿增強化學氣相沉積法製作而成。由微光激發光譜系統的分析中我們看到發光波長、強度與半高寬均隨沉積時間之增加有藍移、增強與變窄的現象，透過傅立葉轉換紅外光儀的分析發現隨著退火與沉積的時間增加，表面Si－O－Si鍵的成分也隨著提升。此外，透過時間解析光激螢光系統的分析，發現生命期有隨著沉澱時間增加而下降的趨勢。因此提出因為受到熱處理的影響導致Si－H鍵的減少，Si－O－Si鍵的增加引發輻射復合機率的增加而導致PL波長藍移與強度增強的螢光，並用此觀點解釋此批樣品在微光激發光譜系統所看到的光譜表現。

In this thesis, using Micro-Photoluminescence (μ-PL), continuous-wave time-resolved photoluminescence (CWPL/TRPL) and Fourier transform infrared (FTIR) analysis, silicon rich nc-Si (nano-crystal Silicon) samples with various emission wavelength (760 30 nm and 390 10 nm) are investigated to understand the proper explanation of the emission mechanism. The model of increasing Si－O －Si bondings during thermal process by enhancing the annealing or deposition time, induced blue shifts in PL spectrums and increased the rate of Schockley-Read-Hall recombination which resulted in the enhancement of its fluorescence is provided.

目錄
摘要 I
Abstract II
第一章 緒論 1
1-1 引言 1
1-2 奈米材料之特性 5
1-3 矽光子學 7
1-3.1 以矽製作而成的光電元件 8
1-3.2 奈米矽晶的背景 9
1-4 目標與動機 10
第二章 實驗原理 11
2-1 螢光 11
2-2 實驗系統原理 14
2-2.1 微光激發光譜 14
2-2.2 時間解析光激螢光系統 16
2-2.3 傅立葉轉換紅外光儀 18
第三章 實驗設備與方法 19
3-1 樣品準備 19
3-2 系統介紹 20
3-2.1微光激發光譜 20
3-2.2 時間解析光激螢光系統 22
3-2.3傅立葉轉換紅外光儀 24
3-3 實驗步驟 25
3-3.1微光激發光譜 25
3-3.2 時間解析光激螢光系統 26
3-3.3傅立葉轉換紅外光儀 27
第四章 結果與討論 29
4-1 微光激發光譜 29
4-2 傅立葉轉換紅外光儀 40
4-3 時間解析光激螢光系統 45
第五章 結論與未來展望 51
參考文獻 52

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