本實驗以Poly-p-phenylenebenzobisoxazole (PBO)的雜環芳香族全共軛硬桿式高分子以及聚3-己烷基塞吩(Poly-(3-hexylthiophene)，P3HT)的全共軛環狀高分子為光電作用層，並混摻具有優良吸光性及導電性奈米碳粒(nano-carbon particle): [6,6]-phenyl C61-butyric acid methyl ester (PCBM)的奈米碳球及酯化多層奈米碳管(MWNT-COOC10H21)，並加入一良好的電洞傳導層PEDOT:PSS，以氧化銦錫(ITO)/PEDOT:PSS/nano-carbon particle:共軛高分子/Al為主要的元件結構，製成雙層太陽能(photovoltaic)電池，並且量測元件的光性和電性。
利用ITO/PEDOT:PSS/PBO/PCBM/Al結構製作成参層太陽能電池元件，所得到的電壓-電流曲線接近一直線，太陽能電池效果並不明顯；將PCBM:P3HT混摻薄膜作為光電作用層有較好的太陽能電池效果，顯示混摻薄膜以交聯網狀結構有助於光致電轉換效率的提升。
將PCBM及酯化多層奈米碳管分別與P3HT混摻，太陽能電池效應隨著奈米碳粒增加其光致電效率有顯著提升；在PCBM及酯化奈米碳管分別與P3HT的混摻薄膜之平行膜面直流導電度(σ∥)作測量，發現隨奈米碳粒增加，導電度有增高之趨勢。
藉由電洞傳輸層(PEDOT:PSS)以及光電作用層(active layer)的薄膜厚度改變，發現將電洞傳輸層(PEDOT:PSS)薄膜厚度由90 nm降低到32 nm可使太陽能電池效率約略提升；而光電作用層PCBM:P3HT薄膜厚度在99 nm時會有最佳的吸光性和電荷傳遞，致使光致電效率的提升。

Fully conjugated heterocyclic aromatic rod-like polymer poly-p-phenylene- benzobisoxazole (PBO) and coil-like poly-(3-hexylthiophene) (P3HT) were applied as opto-electronically active layer. The two polymers mixed with nano-carbon particles, having excellent optical absorption and electric conductivity, of [6,6]-phenyl C61-butyric acid methyl ester (PCBM) or esterified multi-wall carbon nano-tube (MWNT-COOC10H21) as well as a hole transporting layer of PEDOT:PSS. Photovoltaic (PV) cells of indium-tin-oxide (ITO)/PEDOT:PSS/nano-carbon particle:fully conjugated polymer/Al were fabricated for optical and electrical characterizations.
Tri-layered structure of ITO/PEDOT:PSS/PBO/PCBM/Al produced a straight current-voltage relation showing no PV effects. Upon changing the active layer into PCBM doped P3HT layer (PCBM:P3HT), it produced good PV effects suggesting that the doped layer had a penetrating network to facilitate the PV effects.
When PCBM or MWNT-COOC10H21 was doped into P3HT, the device PV effects were increased significantly with nano-carbon particle concentration. The direct-current electric conductivity parallel to the film surface (σ∥)was increased with the nano-carbon particle concentration.
By changing the thickness of hole transporting PEDOT:PSS and of opto-electronically active layers, it was found that when the PEDOT:PSS layer was decreased from 90 nm to 32 nm, there was a slight increase of PV cell efficiency. The active layer of PCBM:P3HT with a thickness of 99 nm had the best optical absorption and charge transport leading to an increase of PV cell efficiency.

圖目錄 IV
表目錄 IX
一、緒論……… 1
1-1 前言.................................................................................................................................1
1-2 研究動機.........................................................................................................................2
二、原理與實驗 3
2-1 光致電元件結構 3
2-1-1 單層結構 ........3
2-1-2 雙層異質接面結構 4
2-1-3 混合層異質接面結構 4
2-2 光致電元件材料 5
2-2-1 陽極(Anode) 5
2-2-2 陰極(Cathode) 6
2-2-3 P3AT共軛高分子 6
2-2-4 PBX硬桿式共軛高分子 7
2-2-5 PEDOT:PSS電洞傳導層 9
2-2-6 PCBM電子傳輸材料 9
2-2-7 奈米碳管 10
2-3 應用原理 12
2-3-1 轉移機制 12
2-3-2 光電轉換原理 13
2-3-3 太陽光模擬 15
2-3-4 太陽能電池等效電路 18
2-3-5 光電特性參數 19
2-4 實驗設備 23
2-4-1 氧電漿(O2 Plasma)清洗機 23
2-4-2 旋轉塗佈機(Spin Coater) 23
2-4-3 真空熱蒸鍍機(Vacuum Thermal Evaporator) 24
2-4-4 手套箱(Glove Box)系統 25
2-4-5 太陽光模擬光源(Solar Simulator System) 25
2-4-6 電性量測：Keithley® 2400之應用 26
2-4-7 導電性量測(Electric Conductivity) / Keithley® 237之應用 27
2-4-8 掃描式電子顯微鏡(Scanning Electron Microscope，SEM) 27
2-4-9 紫外光-可見光吸收光譜(UV-Vis Absorption Spectrum) 28
三、實驗內容 30
3-1 元件的製備 30
3-1-1 PBO高分子溶液配製 31
3-1-2 P3HT高分子/PCBM溶液配製 31
3-1-3 高分子/酯化奈米碳管的溶液配製 31
3-1-4 清洗ITO玻璃 32
3-1-5 旋轉塗佈製備薄膜 32
3-1-6 PBO/PCBM薄膜製做及PCBM:P3HT混摻膜熱處理 32
3-1-7 熱蒸鍍陰極 33
3-2 元件量測 34
3-2-1 電性量測(I-V Curve) 34
3-2-2 四點探針直流電(Four-probe DC)測量法 34
3-2-3 掃描式電子顯微鏡(Scanning Electron Microscope，SEM)量測 34
3-2-4 紫外光-可見光吸收光譜(UV-Vis Absorption Spectrum)量測 34
3-3 多層奈米碳管之化學合成改質 35
3-3-1 多層奈米碳管酸化反應 35
3-3-2 多層奈米碳管酯化反應 35
四、結果與討論 38
4-1 PBO/PCBM 異質接面太陽能電池與P3HT:PCBM混層太陽能電池 38
4-2 P3HT混摻不同比例之PCBM 42
4-3 P3HT混摻不同比例之酯化多層奈米碳管(MWNT-COOC10H21) 50
4-4 PCBM:P3HT與MWNT-COOC10H21:P3HT 之平行膜面的直流導電度 56
4-5 PEDOT:PSS與P3HT:PCBM薄膜厚度改變 65
五、結論 76
六、參考文獻 78

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