此研究利用氧化鋅 (ZnO)作為研究材料，探討當試片摻雜0.2 mol.%氧化鋁或氧化鋰或未摻雜之試片於不同氣氛下燒結 (純氧氣，純氮氣，純氬氣)的影響，觀察其微結構與發光性質變化；利用 XRD 繞射光譜、CL 光譜、掃瞄式電子顯微鏡作為研究工具，分析不同氧分壓或不同摻雜物下氧化鋅的微結構與缺陷化學反應。XRD繞射光譜分析無論是添加摻雜物或不同氣氛燒結，其晶體結構都沒有改變。SEM微結構觀察並無特殊，接著由 CL來驗證缺陷的種類並利用 CL光譜來觀察能階的改變，經過分析可得知氧化鋅之放射波峰包含紫外光，可見光 (藍，綠，黃光)及近紅外光波峰。紫外光 (3.29、3.20 eV)是電子由激發子能階或間隙型鋅原子缺陷能階躍遷至價帶放射之光所組成，藍光 (2.53 eV)為氧空缺相關缺陷，綠光 (2.35 eV)為鋅空缺相關缺陷，黃光則是與間隙型氧原子缺陷和鋰原子相關缺陷有關，近紅外光較少人討論，可能是由於深層能階間的複合 (deep levels recombination)。

In this research, we used the zinc oxide (ZnO) which is die pressed and sintered for studying. We want to know the variations of microstructure and luminescence property when we doped 0.2 mol.% Al2O3 or Li2O to ZnO, or sintered under different atmospheres (high purity oxygen, high purity nitrogen, high purity argon). Using X-ray diffractometry (XRD), scanning electron microscope (SEM), and catholuminescence (CL) spectrometry equipped with a SEM to analyze the different samples. The all six samples’ crystal structure didn’t change via XRD. We investigated for the in-gap-level modification using the CL spectrometry. CL analysis results indicated that ZnO emitted UV light, visible light (blue, green, yellow light), and Near-infrared light emissions. The UV light emission was attributed to the two electronic transitions from the donor level of free exciton and Zn interstitial to valence band. The blue light (2.53 eV) emission was attributed to the donor level of oxygen vacancy-related defect. The green light emission was attributed to the electronic transition from the acceptor level of zinc vacancy-related defect.And the yellow light emission was attributed to the O interstitial and Li-related defects. The Near-infrared light may be attributed to the deep levels recombination.

論文審定書 I
Abstract II
摘要 III
圖目錄 VI
表目錄 IX
第一章 緒論 1
1.1前言 1
1.2 研究動機與目的 2
第二章 文獻回顧 3
2.1 材料簡介 3
2.1.1 半導體 (Semiconductor)介紹 3
2.1.2 氧化鋅簡介 3
2.2 氧化鋅結構與特性 4
2.3 平衡相圖 (ZnO-Al2O3) 7
2.4 氧化鋅的缺陷化學 9
2.4.1 氧化鋅本質缺陷 10
2.4.2 氧化鋅的發光性質 14
第三章 實驗步驟 20
3.1試片製備 20
3.1.1 起始粉末 20
3.1.2 試片製程 20
3.2 導電度與密度量測 23
3.3 微結構觀察和分析 24
3.3.1 X-ray繞射分析 24
3.3.2 光學顯微鏡 (OM) 25
3.3.3 掃描式電子顯微鏡 (SEM) 26
3.3.4 Cathodoluminescence (CL) 26
第四章 實驗結果 28
4.1 X-ray 繞射分析 28
4.2 ZnO密度量測 30
4.3 導電度量測 33
4.4 顯微組織分析 34
4.5 CL 光譜量測 44
第五章 結果討論 50
5.1 XRD分析與SEM微結構分析 50
5.2 CL光譜分析 50
第六章 結論 56
第七章 未來工作 58
參考文獻 59

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