本研究擬研製高頻(GHz) Rayleigh模態特性之表面聲波元件以應用於未來的4G之通訊頻段。本研究採用射頻磁控濺鍍法以成長氮化鋁壓電薄膜，並藉由調變沉積參數以提升其品質因子及機電耦合係數。本研究採用高導電性、低質量密度及價格低廉之鋁薄膜當作IDT電極，並利用電子束微影製程之技術來代替傳統光學微影之製程，分別製作出四組不同奈米線寬的IDT電極，再利用原子力顯微鏡與四點探針分析法以進行物性和電性分析。本研究為考量良率、成本、製程時間及光學解析度…等關鍵因素，將採用反光罩圖層設計法結合乾式蝕刻製程，來完成本研究所設計之四組不同奈米線寬(937 nm、750 nm 、562 nm 以及375 nm)之高頻SAW元件。本研究將完成之四組高頻SAW元件，利用網路分析儀E5071C搭配CASCADE探針座以進行元件頻率響應的量測。由頻率響應分析得知，線寬為937 nm、750 nm 、562 nm 以及375 nm時，其中心頻率分別為1.402 GHz、1.812 GHz、2.425 GHz以及3.747 GHz，可分別應用於不同之通訊頻帶當中，例如：本研究所製作開發之375nm線寬之高頻SAW元件，其可應用於第四代 (4G)通訊之LTE Band 41通訊規格(3.4~3.6 GHz)中；而562 nm線寬之高頻SAW元件，其可應用於第三代 (3G)通訊之WCDMA(2 GHz)通訊規格中。

In this study, high-frequency Rayleigh-mode surface acoustic wave (SAW) devices were employed to construct the 4th generation (4G) mobile telecommunication. To fabricate high-frequency Rayleigh-mode SAW devices, the RF magnetron sputtering method for the growth of piezoelectric AlN thin films are adopted and influences of the sputtering parameters are investigated. After the AlN/Si3N4/Si structure was formed, the IDT (Al) electrodes were attached to the AlN surfaces by using the electron beam lithography method, which have a low resistivity, a low unit cost, and a low density.In order to be applicated in the global systems for mobile communication, four kinds of IDT width were performed on the AlN/Si3N4/Si structure at937nm,750 nm, 562 nm and 375 nm, respectively.The center-frequencies of the four kinds of high-frequency Rayleigh-mode SAW devices are 1.4 GHz, 1.8 GHz, 2.4 GHzand 3.7 GHz, respectively.The processing method adopted in this report contributed significantly to the desired high-frequency SAW devices for the wireless communication system.

摘要……………………………………………………………………………………i
目錄…………………………………………………………………………………...iii
圖目錄………………………………………………………………………………...vi
表目錄…………………………………………………………………………………x
第一章前言 1
1.1研究背景與動機 1
1.2高頻表面聲波元件 5
1.3 研究內容 9
第二章理論分析 10
2.1 氮化鋁結構與特性 10
2.2 壓電理論 13
2.2.1 壓電效應 14
2.2.2 壓電材料 15
2.3 反應性磁控濺鍍…………….………………………………………………..…16
2.3.1 輝光放電 16
2.3.2 磁控濺射 17
2.3.3 射頻濺射 18
2.3.4 反應性濺射 19
2.4 薄膜成長機制 20
2.5 薄膜分析 22
2.5.1 X-ray繞射分析 22
2.5.2掃描式電子顯微鏡分析 23
2.5.3原子力顯微鏡分析 23
2.6 乾式蝕刻製程 24
2.7 表面聲波元件理論和特性 27
2.7.1 表面聲波元件基本設計與特性 27
2.7.2 雷利波 30
2.8 表面聲波元件種類 31
2.8.1 表面聲波濾波器 31
2.8.2 表面聲波共振器 33
2.9 表面聲波元件參數性質 34
2.9.1聲波波速 34
2.9.2插入損失 34
2.9.3機電耦合係數 36
2.10電子束微影製程技術 37
第三章實驗 39
3.1實驗流程 39
3.2基板清洗 41
3.3 薄膜沉積 42
3.3.1射頻磁控濺鍍系統 42
3.3.2直流磁控濺鍍系統 45
3.4 薄膜物性分析 47
3.4.1 X光繞射分析 47
3.4.2掃描式電子顯微鏡 49
3.4.3原子力顯微鏡 50
3.4.4雙束型聚焦離子束顯微鏡 51
3.5薄膜電性分析 52
3.6高頻表面聲波元件製作流程 53
3.6.1 正、反光罩圖層之設計 53
3.6.2 IDT指叉電極設計 59
3.7黃光製程 60
3.8電子束微影製程 61
3.9ICP製程 62
3.10SAW元件網路分析儀量測 63
第四章結果與討論 64
4.1氮化鋁薄膜之特性分析 64
4.1.1濺鍍壓力 64
4.1.2濺鍍功率 68
4.1.3基板溫度 73
4.2 Al電極之電性與物性分析 77
4.3 SAW元件設計與製作 78
4.3.1 正、反光罩圖層之設計與製作 78
4.3.2 電子束微影製程 81
4.4 過蝕刻現象改善 86
4.5 元件頻率響應.......................................................................................................89
第五章結論 96
參考文獻 98

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