本論文之研究目的為以氧化鋅薄膜體聲波共振器(FBAR)研製高敏感度的質量感測器。本研究的FBAR結構為背向蝕刻矽基板，先以濕式蝕刻法形成聲波空腔，並在正面以鈦為晶種層、白金為底電極並以室溫兩階段濺鍍成長高C軸優選取向的氧化鋅薄膜，再以鋁為頂電極，最終以RIE乾蝕刻法去除背部殘餘矽及蝕刻阻擋層(SiN )。在元件的頻率響應分析方面，分別獲得縱波模式及剪波模式之共振現象。
經由不同的鈦與鉬質量負載測試，求得本研究的縱波及剪波質量感測度分別約為3200 Hz cm /ng及1100 Hz cm /ng，遠高於石英震盪器及其他文獻所知。
本論文採用熱電致冷晶片作為升溫量測實驗之模組，經由不同的升溫測試，求得本研究的質量感測器之頻率溫度係數為-70.67 ppm/℃。另外，利用正溫度係數的二氧化矽薄膜沉積在ZnO薄膜上，以改善元件的頻率溫度係數。最終，由分析結果可得知，二氧化矽薄膜改善了元件的頻率溫度係數。

In this study, ZnO film bulk acoustic resonators (FBARs) are proposed to fabricate the mass sensor of high sensitivity. The acoustic cavity is achieved by potassium hydroxide (KOH) etching. The FBAR structures are made of highly C-axis-oriented piezoelectric ZnO thin films using the technique of two-step deposition method. The titanium (Ti) seeding layer, platinum (Pt) bottom electrode, and aluminum (Al) top electrode were deposited by DC sputtering system using a dual gun. Finally, The remnants of silicon and silicon nitride (SiNx) are removed by reactive ion etching (RIE) etching. Furthermore, the two resonant frequencies of longitudinal mode and shear mode had been obtained.
From the experimental results of loading effect with titanium and molybdenum, the mass sensitivity of the longitudinal mode and the shear mode are about 3200 Hz cm /ng and 1100 Hz cm /ng respectively, which are larger than those of quartz resonator or other reports. The measurement system was composed of a thermoelectric cooling module to investigate the temperature coefficient of frequency (TCF) of the mass sensor, which is about -70.67 ppm/.
Bisides, the positive TCF material, silicon dioxode (SiO2) is deposited on ZnO thin films for the purpose of improving the TCF of FBAR devices. For SiO2/ZnO FBAR devices, the SiO2 reveal the compensation of TCF.

摘要 Ⅰ
目錄 Ⅲ
圖表目錄 Ⅴ
第一章 前言 1
1.1 簡介 1
1.2 薄膜體聲波 2
1.3 研究目的 3
第二章 理論分析 5
2.1 壓電效應 5
2.2 壓電材料 6
2.3 Mason 等效電路模型 7
2.4 體聲波傳遞模式 10
2.5 質量負載效應 10
2.6 感測度計算 11
2.7 二氧化矽結構與特性 11
2.8 頻率溫度係數測量 11

第三章 實驗步驟 13
3.1 薄膜體聲波質量感測元件製作流程 13
3.1.1常見的不同電極材料之物性比較及選擇 13
3.1.2元件製作流程 14
3.1.3測試金屬膜之沉積率 14
3.2 量測系統校正 15
3.3 感測元件之結構與測量 15
3.4 變溫量測系統 16
3.4.1 熱電致冷晶片 16
3.4.2 珀爾帖效應(Peltier Effect) 17
3.4.3 熱電致冷晶片特性 17
第四章 結果與討論 18
4.1氧化鋅壓電薄膜之物性分析 18
4.2感測元件之頻率溫度係數 19
4.3不同金屬的質量負載效應 20
4.3.1縱波感測度分析. 20
4.3.2剪波感測度分析 21
4.4利用二氧化矽補償頻率溫度係數 22
4.4.1 SiO2薄膜補償之TCF值. 22
第五章 結論 24
參考文獻 26

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