本論文之研究目的在於研製可應用於擷取振動能量之壓電薄膜換能器。本論文所採用的壓電薄膜換能器，其結構為由上下電極薄膜中間結合壓電薄膜層的三明治結構。為了開發一個可操作於低頻環境以及具長效性之壓電薄膜換能器，本文詳細介紹了可撓性基板的選擇及壓電層之製作方法，並且針對可撓性基板的彈性係數、c軸優選氧化鋅薄膜、c軸優選氮化鋁薄膜及附載質量效應，進行探討與分析。
對於壓電薄膜換能器的結構設計方面，本論文採用三種結構組合，分別為PET基板建構成的單層式換能器(Cu/ZnO/ITO/PET)、不鏽鋼基板建構成的單層式換能器(Cu/ZnO/SUS304 and Cu/AlN/SUS304)與不鏽鋼基板建構成的雙面式換能器(Cu/ZnO/SUS304/Ti/Pt/ZnO/Cu and Cu/AlN/Pt/Ti/SUS304/Ti/Pt/AlN/Cu)，詳細探究可撓性基板之選擇與c軸優選壓電薄膜對於電性輸出之影響。本研究研製的PET單層式氧化鋅換能器，經由輸入100 Hz的振動頻率後，並經由整流濾波電路，匹配負載電阻為5 MΩ時，可獲得最大發電功率為0.07 μW/cm2。
本研究研製的不鏽鋼單層式換能器，經由輸入80 Hz的振動頻率後，並經由整流濾波電路，匹配負載電阻後，不鏽鋼單層式氧化鋅換能器可獲得最大發電功率為1.0 μW/cm2。
為建構雙面式壓電換能器，本研究採用白金薄膜作為附著層以利於成長第二面的c軸優選壓電薄膜，並利用其耐高溫之特性以降低不鏽鋼基材之氧化現象。本研究研製的不鏽鋼雙面式換能器，經由輸入80 Hz的振動頻率後，並經由整流濾波電路，匹配負載電阻後，不鏽鋼雙面式氧化鋅換能器可獲得最大發電功率為1.3 μW/cm2；不鏽鋼雙面式氮化鋁換能器可獲得最大發電功率為1.462 μW/cm2。

The piezoelectric transducer for vibration-energy harvesting is constructed of a piezoelectric layer, bottom electrode and a top electrode. In order to obtain an appropriate transducer for the low-frequency operating; environmentally-friendly and long-term, the flexible substrate, the piezoelectric layer, and the additional mass-loading (tip mass) have been investigated thoroughly. This study investigates the feasibility of a high-performance ZnO and AlN based piezoelectric transducer for vibration-energy harvesting applications.
Firstly, the piezoelectric transducer is constructed of a Cu/ZnO/ITO/PET structure. Both scanning electron microscopy and X-ray diffraction indicate that, among the favorable characteristic of the ZnO piezoelectric film include a rigid surface structure and a high c-axis preferred orientation. Hence, an open circuit voltage of 1.87 V for the ZnO piezoelectric transducer at a vibration frequency of 100 Hz is obtained by an oscilloscope. After rectifying and filtering, the output power of the generator exhibits an available benefit of 0.07 μW/cm2 with the load resistance of 5 MΩ.
Secondly, this investigation introduces novel means of integrating high-performance piezoelectric transducers using single-sided ZnO and AlN films with a flexible stainless steel substrate (SUS304). Hence, the SUS304 substrate exhibits the long-term stability under vibration. The single-sided ZnO and AlN transducers are deposited on the SUS304 substrate at a temperature of 300 oC by an RF magnetron sputtering system. Scanning electron microscopy and X-ray diffraction of piezoelectric films reveal a rigid surface structure and a high c-axis-preferred orientation. A mass loading at the front-end of the cantilever is critical to increase the amplitude of vibration and the power generated by the piezoelectric transducer. The open circuit voltage of the single-sided ZnO power generator is 10.5 V. After rectification and filtering through a capacitor with a capacitance of 33 nF, the output power of the single-sided ZnO generators exhibited a specific power output of 1.0 μW/cm2 with a load resistance of 5 MΩ.
Finally, this investigation fabricates double-sided piezoelectric transducers for harvesting vibration-power. The double-sided piezoelectric transducer is constructed by depositing piezoelectric thin films on both the front and the back sides of SUS304 substrate. The titanium (Ti) and platinum (Pt) layers were deposited using a dual-gun DC sputtering system between the piezoelectric thin film and the back side of the SUS304 substrate. Scanning electron microscopy and X-ray diffraction of piezoelectric films reveal a rigid surface structure and highly c-axis-preferring orientation. The maximum open circuit voltage of the double-sided ZnO power transducer is approximately 18 V. After rectification and filtering through a 33 nF capacitor, a specific power output of 1.3 μW/cm2 is obtained from the double-sided ZnO transducer with a load resistance of 6 MΩ. The variation of the power output of ±0.001% is obtained after 24-hour continuous test. The maximum open circuit voltage of the double-sided AlN power transducer is approximately 20 V. After rectification and filtering through a 33 nF capacitor, a specific power output of 1.462 μW/cm2 is obtained from the double-sided AlN transducer with a load resistance of 7 MΩ.

摘要 III
ABSTRACT V
TABLE OF CONTENTS VIII
TABLE OF FIGURE AND TABLE CAPTIONS X
CHAPTER1 INTRODUCTION 14
CHAPTER 2 THEORETICAL ANALYSIS 16
2.1 PIEZOELECTRICITY 16
2.2 MATERIALS CHARACTERISTICS 18
2.2.1 The characteristics of ZnO thin films 18
2.2.2 The characteristics of AlN thin films 18
2.2.3 The characteristics of Ti and Pt 19
2.3 REACTIVE MAGNETRON SPUTTERING TECHNIQUE 20
2.3.1 Sputtering 21
2.3.2 RF Magnetron sputtering 21
2.4 HARVESTER DESIGN AND MODEL 23
Chapter 3 Experimental procedure 29
3.1 THE CLEANING OF SUBSTRATES 29
3.2 SPUTTERING SYSTEM AND THIN FILM DEPOSITION 30
3.2.1 RF magnetron sputtering system 28
3.2.2 DC magnetron sputtering system 28
3.3 ZNO THIN FILMS DEPOSITION ON ITO/PET SUBSTRATES 36
3.4 SINGLE-SIDED THIN-FILM PIEZOELECTRIC TRANSDUCERS ON SUS304 SUBSTRATES 30
3.4.1 Single-sided ZnO-based piezoelectric transducers 30
3.4.2 Single-sided AlN-based piezoelectric transducers 30
3.5 DOUBLE-SIDED THIN-FILM PIEZOELECTRIC TRANSDUCERS ON SUS304 SUBSTRATES 31
3.5.1 Double-sided ZnO-based piezoelectric transducers 31
3.5.2 Double-sided AlN-based piezoelectric transducers 32
3.6 X-RAY DIFFRACTION (XRD) ANALYSIS 33
3.7 SCANNING ELECTRON MICROSCOPY (SEM) ANALYSIS 35
3.8 NANO-INDENTER AND NANO-SCRATCH TESTER ANALYSIS 35
3.9 OUTPUT VOLTAGE AND POWER DENSITY MEASUREMENT 38
3.10 MASS LOADING 38
Chapter 4 Results and discussion 40
4.1 INVESTIGATION OF ZNO/ITO/PET TRANSDUCERS 40
4.1.1 Structural and morphological properties of piezoelectric ZnO thin films 40
4.1.2 Output voltage and power density of generators 40
4.1.3 Analysis of adhesion of ZnO thin films on ITO/PET substrates 42
4.2 INVESTIGATION OF SINGLE-SIDED ZNO BASED TRANSDUCERS 43
4.2.1 Structural and morphological properties of piezoelectric ZnO thin films 43
4.2.2 Analysis of adhesion of ZnO thin films. 45
4.2.3 Electrical properties of single-sided ZnO based transducer 46
4.3 INVESTIGATION OF SINGLE-SIDED ALN BASED TRANSDUCERS 48
4.3.1 Structural and morphological properties of piezoelectric ZnO thin films
4.3.2 Electrical properties of single-sided AlN based transducer 51
4.3.3 Combination of AlN/SUS304 52
4.4 INVESTIGATION OF DOUBLE-SIDED ZNO BASED TRANSDUCERS 54
4.4.1 Physical and electrical properties of double-sided ZnO-based transducers 54
4.4.2 Analysis of modification of back surface of SUS304 substrate 55
4.4.3 Electrical properties of double-sided piezoelectric transducers 56
4.5 INVESTIGATION OF DOUBLE-SIDED ALN BASED TRANSDUCERS 57
4.5.1 Physical and electrical properties of double-sided AlN-based transducers 58
Chapter 5 Conclusion 60
5.1 ZNO/ITO/PET BASED TRANSDUCERS 60
5.2 SINGLE-SIDED ZNO/SUS304 BASED TRANSDUCERS 60
5.3 SINGLE-SIDED ALN/SUS304 BASED TRANSDUCERS 61
5.4 DOUBLE-SIDED ZNO BASED TRANSDUCERS 62
5.5 DOUBLE-SIDED ALN BASED TRANSDUCERS 63
Chapter 6 Future works 60
References 66

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