低成本、高效率的製程技術一直是太陽電池最重要的議題。在光吸收層之選擇上，直接能隙的I-III-VI族化合物半導體材料硒化銅銦鎵，藉由調變本身的組成比例具有1.1到1.7 eV的能隙變化範圍，在太陽光譜中涵蓋有非常高的光電轉換效率，是作為薄膜型太陽電池極為被看好且深具發展潛力的主吸收層材料。硒化銅銦鎵屬於直接能隙的半導體材料且具有非常高的光吸收係數，所需的厚度相較於其他材料而言可以較薄，故可以降低生產成本。本實驗採用濺鍍法分別備製銅銦鎵三元合金層與銅銦鎵硒四元合金層，再配合硒化技術形成銅銦鎵硒薄膜，針對不同的硒化溫度與製程對於改善銅銦鎵硒薄膜之品質及特性進行研究與探討。

Low cost and high efficiency are continuous interests for the fabrication of solar cells. I-III-VI compound semiconductor Cu(In,Ga)Se2 (CIGS) is the most important absorber material in developing thin film solar cells. The band gap of CIGS varies from about 1.0 to 1.7 eV, which is within the maximum solar absorption region. This is very important for the optimum conversion efficiency. The extraordinarily high absorption coefficient from direct band gap leads to thinner thickness and lower fabrication cost for its use in thin film solar cells. In this experiment, we deposited CuInGa and Cu(In,Ga)Se2 alloy layers on soda-lime glasses by RF sputtering separately and then used selenization process to form Cu(In,Ga)Se2 thin films. We study the effects of selenized temperatures and processes on the qualities and characteristics of CIGS thin film.

論文審定書 i
致謝 ii
ACKNOWLEDGEMENT iii
摘要 iv
ABSTRACT v
CONTENTS vi
LIST OF FIGURES viii
LIST OF TABLES xvii
Chapter 1 Introduction 1
1.1 Solar Energy 1
1.2 Solar Cells 2
1.3 CIGS Solar Cell 6
1.4 Motivation 9
Chapter 2 Experiments 18
2.1 Cleaning of Soda-Lime Glass Substrates 18
2.2 Deposition of CIG and CIGS Precursors by RF Sputtering 18
2.3 Selenization of CIG and CIGS Precursors 19
2.4 Characterization 20
Chapter 3 Results and Discussion 25
3.1 Characteristics of One-Stage Selenization Process of CIG Precursor at Different Selenization Temperatures 25
3.2 Characteristics of Two-Stage Selenization Process of CIG Precursor at Different First-Stage Selenization Temperatures and Fixed Second-Stage Selenization Temperature 26
3.3 Characteristics of One-Stage Selenization Process of CIGS Precursor at Different Selenization Temperatures 27
3.4 Characteristics of Two-Stage Selenization Process of CIGS Precursor at Different First-Stage Selenization Temperatures and Fixed Second-Stage Selenization Temperature 28
Chapter 4 Conclusions 87
References 89

[1.1]http://www.newport.com/Introduction-to-Solar-Radiation/411919/1033/content.aspx
[1.2]http://solarwiki.ucdavis.edu/The_Science_of_Solar/Solar_Basics/B._Basics_of_the_Sun/III._Solar_Radiation_Outside_the_Earth's_Atmosphere
[1.3]D. W. Chiu (June, 2009), A Study of Thin Film CuIn(Al)Se2 Formation Prepared by Selcnization of Bi-layer Metallic Precursors. Unpublished master’s thesis, Institute of Microelectronics Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan (R.O.C.).
[1.4]http://www.nrel.gov/ncpv/
[1.5]http://www2.kfupm.edu.sa/cent/img/KFUPM-TFSC-Dec20.pdf
[1.6]S. M. Sze, Semiconductor Devices - Physics and Technology. John Wiley & Sons, 1985.
[1.7]https://www.ee.ethz.ch/fileadmin/user_upload/d-itet/news/events/Tiwari Präsentation.pdf
[1.8]http://www.intechopen.com/books/solar-cells-research-and-application-perspectives/electric-energy-management-and-engineering-in-solar-cell-system
[1.9]S. M. Sze, Semiconductor Devices - Physics and Technology. John Wiley & Sons, 1985.
[1.10]http://www.materialsnet.com.tw/DocView.aspx?id=8238
[1.11]A. R. Jeong et al., “Crystalline ordered states of CuIn1-xGaxSe2 (x = 0, 0.3, and 1.0) thin-films on different substrates investigated by Raman scattering spectroscopy”, Materials Chemistry and Physics, no. 134, pp. 1030-1035, 2012.
[1.12]D. H. Kuo et al., “Effects of selenization parameters on growth characteristics of the Cu(In,Ga)Se2 films deposited by sputtering with a Cu-In-Ga, Cu-In-Ga2Se3, or Cu-Ga-In2Se3 target and a subsequent selenization procedure”, Applied Surface Science, no. 268, pp. 22-27, 2013.
[1.13]H. K. Song et al., “Fabrication of Cu(In,Ga)Se2 thin films solar cell by selenization process with Se vapor”, Thin Solid Flms, no. 435, pp. 186-192, 2003.
[1.14]H. F. Liang et al., “CIGS formation by high temperature selenization of metal precursors in H2Se atmosphere”, Splid-State Electronics, no. 76, pp. 95-100, 2012.
[1.15] V. F. Gremenok et al., “Preparation of Cu(In,Ga)Se2 thin film solar cells
by two-stage selenization processes using N2 gas”, Solar Energy Materials & Solar Cells, no. 89, pp. 129-137, 2005.
[2.1]http://en.wikipedia.org/wiki/Scanning_electron_microscope
[2.2]http://undsci.berkeley.edu/article/0_0_0/dna_04
[2.3]http://www.hindawi.com/journals/aot/2011/213783/fig2/