本論文的實驗主題在於研究氧化亞銅(Cuprous Oxide, Cu2O)與氧化鎂 (Magnesium Oxide, MgO)所組成的超晶格(Superlattices)結構的成長參數與其結構的關係。實驗以磁控濺鍍法成長氧化亞銅與氧化鎂薄膜於C-面向(0001)的氧化鋁(Al2O3)基板上，研究發現氧化亞銅以及氧化鎂所組成的超晶格結構皆可成長出(111)-面取相的氧化亞銅與氧化鎂磊晶薄膜，但實驗結果顯示雖然樣品呈現出磊晶結構，但在高溫下成長的樣品，其層狀並非我們理想預期中平面式一層一層堆疊，而是形成顆粒狀，致使界面並不平整。因此為了使其呈理想的超晶格結構，我們降低成長溫度，從而避免材料本身在高溫成長時容易會呈現島狀結構的趨勢，藉由改變成長時的環境溫度以降低其原子在鍵結時的動能，使其層層堆疊的界面較為平整。實驗方法是利用X-ray繞射(XRD)分析，如: 2theta-omega，掠角XRD繞射和掠角X光反射率(XRR)，分析樣品之晶相變化與其平整度的變化;利用掃描式電子顯微鏡(SEM)觀察在不同溫度下成長的樣品之表面形貌變化;利用穿透式電子顯微鏡(TEM)觀察樣品的分層結構平整度以及晶體之微米或奈米結構，藉以瞭解磊晶成長溫度對於超晶格結構之影響。

This thesis investigates the epitaxial growth and structural characterizations of Cu2O/MgO superlattices, which consist of alternating layers of cuprous oxide and magnesium oxide epitaxial thin films. The superlattices were grown on c-oriented sapphire (Al2O3) substrates by sputtering at various temperatures under an optimized gas pressure of Ar:O2 mixtures. The intended layer-by-layer growth of superlattices of planar interfaces were not successful when grown at high temperature as the Cu2O films tended to grow in island forms. To entice the so-call layer-by-layer growth that supposedly would lead to planar surface or interfaces, the growth temperatures were dramatically decreased, albeit possibly at the sacrifice of some degree of crystalline perfection only achievable at high temperatures. Without losing the epitaxial nature of the superalttices, however, the adopted range of temperatures of the thin film deposition were somehow able to reduce the mobility of the deposited atoms, as represented by the suppressed island formation and realized smoother interfaces. In this work, high-resolution analytical x-ray diffractometry (XRD), such as 2theta-omega, or grazing angle (GIXRD) scans, and grazing angle X-ray reflectivity (XRR) measurements, were employed to characterize the epitaxial and interfacial nature of the superlattices, and scanning electron microscopy (SEM) was used to observe the surface morphology, while transmission electron microscopy (TEM) operated in high resolution mode, coupled with the electron diffraction pattern formation, was used to achieve atomic imaging and micro- and nanostructures characterizations of the samples. The effects of an initial MgO layer that was grown at high temperature and the overall dependence of the growth temperature are discussed based on the correlated findings.

論文審定書 i
致謝 ii
摘要 iii
Abstract iv
目錄 v
圖目錄 viii
表目錄 xi
第一章 序論 1
1-1前言 1
1-2文獻回顧 2
1-2-1氧化亞銅(Cu2O)特性 2
1-2-2氧化亞銅(Cu2O)成長方式 3
1-2-3氧化鎂(MgO)特性 4
1-2-4氧化鎂(MgO)成長方式 5
1-3研究動機 7
第二章 實驗儀器及理論基礎 8
2-1濺鍍(sputtering)系統及原理 8
2-1-1濺鍍原理 8
2-2 X光繞射儀及原理 9
2-2-1 X-ray繞射儀簡介及掃描模式 9
2-2-2 2theta-omega(2θ-ω) 10
2-2-3 掠角入射法(GIXRD) 11
2-2-4 phi scan模式 12
2-2-5 極圖(pole figure) 12
2-2-6 rocking curve模式 13
2-2-7 X-ray reflectivity (XRR) 13
2-3掃描式電子顯微鏡(Scanning Electron Microscopy, SEM) 14
2-4 穿透式電子顯微鏡(Transmission Electron Microscopy, TEM) 15
第三章 實驗設計 16
3-1單層薄膜成長 16
3-2多層薄膜成長 17
3-3 Superlattices成長 18
第四章 實驗結果與分析 20
4-1 單層薄膜分析結果 20
4-1-1 成長參數 20
4-1-2 XRD分析結果 21
4-2 多層薄膜分析結果 26
4-2-1 成長參數 26
4-2-2 XRD分析結果 27
4-2-3 SEM分析結果 31
4-3 Superlattices薄膜分析結果 32
4-3-1 成長參數 32
4-3-2 XRD分析結果 33
4-3-3 SEM分析結果 39
4-3-4 TEM分析結果 41
第五章 結論 45
參考文獻 46

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