近年來表面聲波元件廣泛應用於通訊產品上，且持續往高頻化的趨勢發展，操作頻率均大幅提高至GHz以上，因此，表面聲波元件之高頻化與微小化之研究便成為重要的課題。本研究利用壓電薄膜於壓電基板上所製作之表面聲波元件，具提高元件操作頻率之特點，未來可應用於輕薄短小的通訊產品中。
本研究以IDT/AlN/LiNbO3及IDT/AlN/LiTaO3雙壓電層結構研製高頻表面聲波元件，以提升中心頻率及聲波傳遞速率。為研製出此高頻元件，本研究先於壓電基板上利用射頻磁控濺鍍法沉積氮化鋁(AlN)薄膜，藉由不同濺鍍條件：沉積時間、濺鍍功率、腔體壓力的調變，來製作不同結晶性的氮化鋁薄膜，並探討其濺鍍參數與薄膜的關係，得到最佳濺鍍參數。藉由SEM與XRD對AlN薄膜進行分析，所得之薄膜具有高C軸優選取向及柱狀結構。
元件製作分別利用奈米壓印技術在AlN/LiNbO3及電子束微影技術在AlN/LiTaO3結構上定義出指叉電極(IDT)，製作IDT/AlN/LiNbO3及IDT/AlN/ LiTaO3表面聲波元件。AlN/LiNbO3結構所使用之奈米壓印製程係以PMMA A6作為高分子轉介層，使用壓力4.6 MPa，溫度180°C，時間5分鐘進行壓印，之後以RIE蝕刻PMMA殘餘層，並以蒸鍍鋁金屬作為電極，完成元件之製作，所得之元件中心頻率為2.04GHz，波速為5304m/s；在AlN/LiTaO3結構部分是以電子束微影技術來完成SAW元件之製作，所得之元件中心頻率為2.02GHz，波速為5252m/s。

In recent years, surface acoustic wave components have been widely used in communication product with high-frequency product. Besides, the operating frequency has been greatly increased to be above gigahertz. Therefore, the researches on high frequency and minimization of SAW devices have become important issues. In this study, the SAW devices were fabricated on double-layered piezoelectric substrates to increase the operating frequency, and can be applied to light and small dimensional communication products in the future.
In this study, in order to increase the center frequency (ƒ0) and phase velocity (Vp), the IDT/AlN/LiNbO3 and IDT/AlN/LiTaO3 structures were developed. Firstly, aluminum nitride thin films were deposited on LiNbO3 and LiTaO3 substrates by RF magnetron sputtering. In order to obtain the optimum sputtering parameters, the sputtering conditions such as: deposition time, RF power, and chamber pressure were adjusted. The relationships between the sputtering parameters and the varied crystalline of aluminum nitride thin films were investigated in this study. The AlN thin films were analyzed by SEM and XRD, which showed that the obtained AlN thin films existed the high c-axis orientation and the columnar structure.
To fabricate the SAW devices, the interdigitated electrodes (IDT) were defined on the AlN/LiTaO3 structure by electron beam lithography. For the AlN/LiNbO3 structure, the IDT is defined by nanoimprint technology. In the nanoimprinting process, the PMMA A6 was used to be the polymer transfer layer. The IDT structure on the AlN/LiNbO3 was imprinted at 180°C for 5min with imprint pressure of 4.6MPa. After the imprinting process, the residue layer of the PMMA was etched by RIE process and then the Al electrode was deposited by thermal evaporation. The SAW deice with the center frequency of 2.04 GHz and the phase velocity of 5304 m/s on an AlN/LiNbO3 substrate was obtained. On the other hand, the center frequency of 2.02 GHz and wave velocity of 5252 m/s of the SAW device with IDT/AlN/LiTaO3 structure by electron beam lithography were obtained.

摘要 i
Abstract iii
目錄 v
圖目錄 viii
表目錄 x
第一章 前言 1
1.1 研究背景與動機 1
1.2 表面聲波元件 3
1.3 奈米壓印技術 6
1.4 研究內容 8
第二章 理論分析 9
2.1 42˚ Y-cut鉭酸鋰(LiTaO3)晶體結構與特性 9
2.2 Z-cut鈮酸鋰(LiNbO3)晶體結構與特性 10
2.3 氮化鋁(AlN)結構與特性 12
2.4 壓電效應（piezoelectric effect） 15
2.5 壓電材料 16
2.6 薄膜成長機制 16
2.7 反應性磁控濺鍍原理 18
2.7.1 輝光放電原理 18
2.7.2 射頻濺射 19
2.7.3 磁控濺射 20
2.7.4 反應性濺射 21
2.8 表面聲波元件理論和種類 22
2.8.1 表面聲波元件基本設計與特性 23
2.8.2 表面聲波元件種類 24
2.9 表面聲波元件參數性質 27
2.9.1 聲波波速 27
2.9.2 插入損耗 27
第三章 實驗 29
3.1 實驗流程 29
3.2 基板清洗 31
3.3 濺鍍系統與薄膜沉積 32
3.3.1 射頻磁控濺鍍系統 32
3.3.2 熱蒸鍍系統 34
3.4 薄膜物性分析 35
3.4.1 Ｘ光繞射分析 35
3.4.2 掃描式電子顯微鏡分析 37
3.5 電子束微影製程 38
3.5.1硬模(Si)製作IDT電極圖形 39
3.5.2 AlN/LiTaO3結構製作IDT電極圖形 40
3.6 感應式耦合電漿蝕刻系統 41
3.6.1 金屬鋁蝕刻 41
3.6.2 硬模(Si)蝕刻製程 42
3.7 奈米熱壓印製程 44
3.8 反應式離子蝕刻系統 46
3.9 SAW元件網路分析儀 48
第四章 結果與討論 49
4.1 氮化鋁薄膜之特性分析 49
4.1.1 AlN/LiTaO3結構下之AlN薄膜分析 49
4.1.2 AlN/LiNbO3結構下之AlN薄膜分析 55
4.2 奈米元件壓印製作與製程改善 61
4.3 乾式蝕刻之製程改善 63
4.4 表面聲波濾波器之頻率響應 65
4.4.1 AlN/LiNbO3之SAW元件頻率響應 65
4.4.2 AlN/LiTaO3之SAW元件頻率響應 66
第五章 結論 68
參考文獻 70

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