Responsive image
博碩士論文 etd-0728107-011313 詳細資訊
Title page for etd-0728107-011313
論文名稱
Title
電沉積類鑽碳薄膜
Electrodeposition of Diamond-Like Carbon Films
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
88
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2007-07-20
繳交日期
Date of Submission
2007-07-28
關鍵字
Keywords
類鑽碳、電沉積、金氧半
DLC, electrodeposition, MIS
統計
Statistics
本論文已被瀏覽 5694 次,被下載 0
The thesis/dissertation has been browsed 5694 times, has been downloaded 0 times.
中文摘要
本論文主要目的在於使用成本低、沉積速度快、實驗步驟簡單的液相電沉積法沉積DLC薄膜。在低電位下進行沉積DLC薄膜,電解液為混合醋酸和水的醋酸水溶液。改變不同實驗條件下,探討對DLC薄膜的特性與品質的影響。在特性的研究上,利用拉曼光譜分析儀(Raman Spectroscopy)、掃描式電子顯微鏡(SEM)和原子力顯微鏡(AFM)來做分析,拉曼光譜分析顯示D peak和G peak分別位於1350 cm-1和1580cm-1處,証明DLC結構的存在;由AFM和SEM的分析,可分別觀察DLC薄膜的成長機制及表面結構,成長最好品質的DLC薄膜。由實驗得知,在高電壓下沉積的DLC薄膜會有較好的薄膜品質,以利於元件的製作。
最後製作成MIS結構,利用C-V和G-V分析使用熱退火(Annealing)減少薄膜的介面缺陷的影響。
Abstract
Diamond-Like Carbon (DLC)films were successfully deposited on the ITO substrate by electrodeposition technique. This method has several advantages in terms of low cost, rapid growth rates and simple setup. Electrodeposition of DLC thin film was carried out at low DC potential by using a mixture of acetic acid and DI water as electrolyte. The Raman spectra showed two peaks located at 1350cm-1 and 1580cm-1, which were the characterized peaks for DLC films deposited on ITO substrates. By varying the experimental parameters such as the deposited DC potential, distance of electrodes, and the concentrations of solution, the growth mechanism of deposition process was investigated, and the best quality of DLC films was also achieved. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to make insight into accurately the surface morphology of DLC films related to deposited parameters
In addition, according to the experimental results, it indicates that the quality of the DLC film was improved as deposited at higher DC voltage. Finally, to demonstrate the effect of annealing on the interfacial characteristics the C-V and G-V curves of MIS structures are the further works.
目次 Table of Contents
第一章 緒論 1
1-1前言 1
1-2發展歷史 1
1-3研究目的 3
1-4論文架構 3
第二章 理論基礎 4
2-1文獻回顧 4
2-2 DLC的理論 5
2-2-1 DLC的組成 5
2-2-2 DLC的結構 6
2-2-3 DLC的特性與應用 7
2-3 成膜機制 9
2-3-1 沉積現象 9
2-3-2 長晶 9
2-3-3 晶粒成長 10
2-3-4 聚結 11
2-3-5縫道填補與沉積薄成長 12
2-4 MIS結構 12
2-4-1 MIS結構之重要性 12
2-4-2 MIS電容 13
2-4-3 MIS的量測 15
2-5 漏電流機制 19
2-5-1 氧化層缺陷 19
2-5-2 補陷電荷的影響 19
第三章 實驗方法與儀器設備 23
3-1 實驗流程 23
3-2實驗材料與儀器設備 24
3-2-1 實驗材料 24
3-2-2 儀器設備 24
3-3實驗操作步驟 25
3-3-1 基板清洗步驟 25
3-3-2 液相電沉積之操作步驟 26
3-3-3 熱蒸鍍操作步驟 26
3-4 量測儀器與其原理 27
3-4-1 拉曼測試 27
3-4-3 類鑽碳膜之拉曼光譜量測 28
3-4-4 掃描式電子顯微鏡(SEM) 33
3-4-5 原子力顯微鏡 (AFM) 34
第四章 結果與討論 36
4-1 拉曼光譜分析 36
4-2 DLC薄膜之電流變化特性分析 37
4-2-1 電壓之影響 37
4-2-2 電解液濃度之影響 38
4-2-3 電極間距之影響 38
4-2-4 電解液溫度之影響 39
4-3 SEM分析 40
4-3-1 工作電壓之影響 40
4-3-2 電解液濃度之影響 41
4-4 AFM分析 41
4-5 熱退火對DLC薄膜之電性影響 42
第五章 結論 43
參考文獻 References
1]Y. Namba, J. Vac. Sci. Technol. A 10 (1992) 3368.
[2]H.Wang, M.Shen, Z. Ning, C.Ye, C. Cao, H. Dang, H. Zhu, Appl. Phys. Lctt. 69 (1996) 1076.
[3]C. Cao, H. Wang, Thin Solid Films 368 (2000) 203.
[4]V.P. Novikov, V.P. Dymont, Appl. Phys. Lett. 70 (1997) 200.
[5]R.K. Roy, B. Deb, B. Bhattacharjee, A.K. Pal, Thin Solid Films 422(2002) 92.
[6]S. Gupta, R.K. Roy, B. Deb, S. Kundu, A.K. Pal, Materials Letters 57 (2003) 3479-3485..
[7]陳培麗,科儀新知,13(2) (1991) 82.
[8]J. C. Phillips, Phys. Rev. Lett., 51 (1979) 1355.
[9]J. C. Angus, and F. Jansen, J. Vac. Sci. Technol., A6 (1988) 1778.
[10]P. Reinke, W. Jacob amd W. Moller, J. Appl. Phys., 74 (1993) 1354.

[11]M. A. Tamor, and J. B. Wu, J. Appl. Phys., 67 (1990) 1007.
[12]C. F. Chen and S. H. Chen, Diamond Relat. Mater., 3 (1994) 443.
[13]宋健民,碳的大千世界,鑽石合成,全華書局,2000。
[14]J.Robertson, “structural models of a-C and a-C:H”,Diamond and Related Materials, 4(1995)297-301.
[15]巫金龍,類鑽碳薄膜成長及MIS元件特性分析,中山大學,碩士論文,2006。
[16]Donald A. Neamen “Semiconductor Physics & Devices”,3rd (2003)
[17]莊達人,VLSI 製造技術,第五章,高立圖書有限公司,2000。
[18]T. Suzuki, Y. Manita, T. Yamazaki, S. Wada, and T. Noma, “Deposition of carbon films by electrolysis of a water-ethylene glycol solution”, Journal of Materials Science, 30 (1995) 2067-2069.
[19]S. M. SZE “Semiconductor Devices”,2rd (2005) 169-251
[20]Jayshree Seth, M. I.Chaudhry, S. V. Babu “Electrical characteristics of plasma-deposited diamondlike carbon/silicon metal –insulator -semiconductor structures”, J. Vac. Sci. Technol. , A 10(5) (1992) 3125.
[21]A. Azim Khan, John A. Woollam, Y. Chung, “Interfacial effects due to tunneling to insulator gap states in amorphous carbon on silicon metal-insulator-semiconductor structures”, J. Appl. Phys. 55(12) , (1984) 4299
[22]S Gupta, R.K. Roy, B. Deb, S. Kundu, K. Pal A, “Low voltage electrodeposition of diamond like carbon films”,Materials Letters, 57 (2003) 3479-3485.
[23]K. Sreejith, Nuwad, C.G.S. Pillai, “Low voltage electrodeposition of diamond like carbon (DLC)”, Applied Surface Science, 252 (2005) 296-302.
[24]R.K. Roy, B. Deb, B. Bhattacharjee, A.K. Pal, “Synthesis of diamond-like carbon film by novel electrodeposition route”, Thin Solid Film 422 (2002) 92-97
[25]J. Robertson, “The deposition mechanism of diamond-like a-C and a-C:H”, Diamond and Related Materials, 3 (1994) 361-368.
[26]Simon M. Sze,“Physics of Semiconductor Devices”,3rd (2006) 197-240
[27]Hao Wang,Masahiro Yoshimura, “Electrodeposition of diamond -like carbon films in organic solvents using a thin wire anode”,Chemical Physics Letters 348 (2001) 7-10
[28]J. C. Angus and C. C. Hayman, “Low-Pressure, Metastable Growth of Diamond and ``Diamondlike' Phases”, Science, 241 (1998) 913-921
[29]B.B Pate, M.H. Hecht, C. Binns, “Photoemission and photon-stimulated ion desorption studies of diamond (111): hydrogen”, Journal of Vacuum Science Technology, 21 (1981) 364-367.
[30]A. Erdemir, I.B. Nilufer, O.L. Eryilmaz, M. Beschliesser, G.R. Fenske, “Friction and wear performance of diamond-like carbon films grown in various source gas plasmas”, Surface and Coatings Technology, 120-121(1999) 589-593.
[31]C. N. Banwell, Fundamentals of Molecular Spectroscopy, 2nd Edition, McGraw-Hill, 1972.
[32]E. G. Brame, Jr. and J. G. Grasselli, ed., Infrared and Raman
Spectroscopy, Part C, Marcel Dekker, 1977
[33]S. K. Freeman, Applications of Laser Raman Spectroscopy, John Wiley & Sons, 1974.
[34]H. A. Szymanski, ed., Raman Spectroscopy, Plenum, 1967.
[35]J.W. Ager III, S. Anders, and A. Anders, Appl. Phys. Lett.,66 (1995) 3444.
[36]D.Beeman, J. Silverman, and R. Lynds, Phys. Rev. B30 (1984) 870.
[37]A. Richter, H.J. Scheibe, and W. Pompe, J. Non-cryst. Solid.,88 (1986) 131.
[38]K. W. R. Gilkes, S. Prawer, and K.W. Nugent, J.Appl. Phys., 87 (2000) 7283.
[39]S. F. Yoon, Rusli. J. Ahn,Q. Zhang, Y. S. Wu, and H. Yang, Diamond Relat. Mater. 7 (1998) 70.
[40]T. Sharda, T.Soga, T. Jimbo, and M. Umeno,Diamond Relat. Mater. 9 (2000) 1331.
[41]S. F. Yoon, Rusli. J. Ahn, Q.Zhang, Y. S. Wu, and H. Yang, Diamond Relat. Mater. 7 (1998) 1213.
[42]M. Yoshikawa, Mater. Sci. Forum., 5253 (1989) 365.
[43]D. Beeman, J. Silverman, R. Lynds, and M. R. Anderson, Phys. Rev., B30 (1984) 870.
[44]F. Tuinstra and J. L. Koenig, J. Chem. Phys., 53(1970) 1126.
[45]S. A. Solin Physica B99 (1980) 443.
[46]M. A. Tamor and W. C. Vassel, J. Appl. Phys., 76 (1994) 3823.
[47]H. C. Tsai, D. B. Bogy, M. K.Kundmann, D. K. Veirs, M. R. Hilton and S. T. Mayer, J. Vac. Sci. Technol., A6 (1998) 2307
[48]A. K. Gangopadhyay, P. A. Willement, M. A. Tamor, and W. C. Vassel, Tribology International, 30 (1997) 9.
[49]J. Schwan, S. Ulrich, V. Batori, H. Ehrhardt and S. R. P. Silva, J.Appl. Phys. 80 (1996) 440.
[50]R. Vuppuladium, H. E. Jackson and R. L. C, J. Appl. Phys., 77 (1994) 2714.
[51]A. C. Ferrari and J. Robertson, Phys. Rev., B 62 (2000) 11089.
[52]F. Tuinstra and J. L. Koening, J. Vhem. Phys., 53 (1970) 1126.
[53]A. C. Ferrari and J. Robertson, Phys. Rev., B 62 (2000) 14095.
[54]M. Chhowalla, A. C.Ferrari, J. Robertson, G. A. J. Amaratunga, Appl. Phys. Lett., 76 (2000) 1419.
電子全文 Fulltext
本電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。
論文使用權限 Thesis access permission:校內校外均不公開 not available
開放時間 Available:
校內 Campus:永不公開 not available
校外 Off-campus:永不公開 not available

您的 IP(校外) 位址是 3.227.229.194
論文開放下載的時間是 校外不公開

Your IP address is 3.227.229.194
This thesis will be available to you on Indicate off-campus access is not available.

紙本論文 Printed copies
紙本論文的公開資訊在102學年度以後相對較為完整。如果需要查詢101學年度以前的紙本論文公開資訊,請聯繫圖資處紙本論文服務櫃台。如有不便之處敬請見諒。
開放時間 available 已公開 available

QR Code