由於低溫複晶矽薄膜晶體 (Low-Temperature Poly-Si，LTPS)具有高電子遷移率的優點，因此能夠有效改善顯示器的解析度，進而利用它高遷移率的優點可以在小尺寸的面板上整合控制電路、記憶體等積體電路降低開關電路與外部電路的接點，因此在電路操作時，光電流、熱效應與寄生電容對這些精密電路的影響就更需要被考慮，本篇論文針對最先進的準分子雷射結晶共平面 (coplane) 複晶矽薄膜電晶體元件(poly-si thin film transistor)並且利用寬長比為128um/6um和128um/16um的維度來做的電特性研究，量測得知在正照光的情況下光漏電流與一般非照光來比光漏電在線性區操作與飽和區操作等條件下會有1~4個數量級的差距而且與閘極電壓無直接關係。
　　在電容部分的討論著重在改變不同的條件下萃取得閘極-源級間的電容值(Cgs)對電容的物理含意做分析。因為對於“系統整合於面板”(SOP)來說，細微的載子都會產生相當大的影響，因此溫度的效應也必須被考慮。
　　此外，研究會發現除了電子遷移率相對於100K的情況，在300K高溫時的遷移率明顯比溫度為100K時大外，高溫時的電流大小也會受到影響。上述的所有分析過程中會儘量利用到文獻作為理論依據和各個模型的概念的參考來源。

　　Because of the poly-si thin film transistor have the advantage of high mobility, it can improve the analysis for the flat plan display. Using the above advantage can combine the integrated circuit as control IC and memory on the small panel to reduce the number between the switch circuits and the outside contacts. These precise circuits must be considering the photo current、thermal effects and the parasitical capacitance more due to the influence of these precise circuits is more serious than the switch circuits. In my thesis, the research of the electrical characteristics of the newest excimer laser crystallize coplane poly-si thin film transistors ,and using the device length with width is 128um/6um and 128um/16um can be extracted that the environment of the facing illumination have the photo-leakage current than none illumination about four orders, and the photo-leakage current is not consider with any gate voltage.
　　With the discussion of the capacitance, the main point of my researches is to change different conditions to extract the gate to source capacitance (Cgs). In addition, the slight carriers may effect the devices with the high mobility system on panel (SOP) technology error, the temperature must be considered.
　　We find the mobility is bigger at the environment of the temperature is 300K than the environment of the temperature is 100K when the device work in the linear region and the on current is lower at the environment of the temperature is 300K than the environment of the temperature is 100K when the device work in the saturation region. Using some references and some models as the concepts can analysis some phenomenons I refer to above.

第一章 引言 1
1.1 歷史 1
1.2 概觀 1
1.3 複晶矽薄膜的缺陷 5
1.4 電容對電壓分析 6
1.5 量測動機與論文架構 8
第二章 結晶技術 11
2.1 前言 11
2.2 準分子雷射結晶 13
2.3 連續橫向結晶 17
第三章 低溫複晶矽薄膜電晶體的電子特性以及元件製程 22
3.1 LTPS元件的變革以及製程的簡介 22
3.2 Seto 模型 25
3.3 複晶矽薄膜電晶體的基礎特性 28
3.3.1 轉換特性 28
3.3.2 輸出特性 30
3.4 元件參數萃取的方法 31
3.4.1 決定臨界電壓 33
3.4.2 決定場效遷移率 34
3.4.3 決定on/off比例 35
3.4.4 決定次臨界搖擺 36
3.4.5 決定陷阱密度 36
3.4.6 決定通道電阻與寄生電阻 37
第四章 實驗結果與討論 39
4.1 複晶矽薄膜電晶體照光機制分析 39
4.2 複晶矽薄膜電晶體電容對電壓分析 47
4.3 複晶矽薄膜電晶體變溫分析 53
第五章 結論 56
參考文獻 57
圖片 71
表格 99

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