在現今的IC封裝產業，銲線是否有良好的接合，與極佳的共晶程度，常常是影響IC晶片的可靠度與製程良率。
金線與鋁墊的表面污染或腐蝕也是影響銲線接合能力的因素之一，針對鋁墊表層元素做相關的SEM/AES/EDS和XPS分析，可以瞭解到鋁層下的缺陷及腐蝕因素，導致介金屬化合物成長不良，最後造成銲線失敗。封裝用的環氧樹脂的掺雜成份在高溫環境下，會因為其含溴的成份與Au-Al介金屬化合物產生反應而造成腐蝕，進而使銲線接合能力退化或失敗，可以在Au-Al介金屬化合物介面處中的Au4Al 相中清楚發現。

Recently, wirebonding process play an important role in IC assembly packaging manufacture. No degradation of bonding wire interconnection and defect free eutectic alloy bonding offer the high yield and reliability of products.
The degradation of Au wire/Al bond pad has become a major bonding failure problem. By utilizing the SEM, AES, EDS and XPS techniques, it could be carried out to reveal and identify defects underneath Al layer, and the contaminated Al bond pads could cause poor intermetallic growths led to the failed or unreliable connections from the chip to the outside world. It is because that the molding resin with low thermal stability (e.g. bi-phenyl epoxy resin) and the IC devices under high thermal environments were used in packaging process. For the lifetime to bond failure, the bi-phenyl epoxy molding becomes shorter than that for cresol novolac epoxy due to the corrosion reaction of Au-Al intermetallics with bromine (Br) contained in the resin compounds. It was clarified that the reactive intermetallic was Au4Al phase formed in the bond interface.

附表目錄 …………………………………………………… Ⅷ
附圖目錄 …………………………………………………… Ⅸ
第一章 序論 ………………………………………………… 1
1-1 IC 封裝簡介 …………………………………………… 2
1-1-1 電子構裝的發展 …………………………………… 2
1-1-2 封裝的技術層級區分 ……………………………… 2
1-2 IC 封裝製程說明………………………………………… 3
1-3 銲線製程的技術發展…………………………………… 5
1-3-1 超音波接合(Ultrasonic Bonding，US) …………… 5
1-3-2 熱壓接合(Thermocompression Bonding，TC) …… 6
1-3-3 熱超音波接合………………………………………… 6
1-3-4 卷帶自動接合(Tape Automated Bonding，TAB) … 7
1-3-5 銲錫凸塊技術 ……………………………………… 8
1-3-6 覆晶接合的製程 …………………………………… 8
1-4 共晶界面………………………………………………… 9
1-4-1 傳統銲線材料………………………………………… 9
1-4-2 介金屬化合物………………………………………… 10
第二章 銲線製程步驟與檢測儀器…………………………… 12
2-1 銲線製程步驟……………………………………………… 13
2-2 檢測儀器………………………………………………… 13
2-2-1 掃瞄式電子顯微鏡(SEM) …………………………… 13
2-2-2 歐傑電子能譜儀分析(AES) ………………………… 15
2-2-2-1 歐傑電子能譜儀分析(AES)儀器示意圖………… 16
2-2-2-2 歐傑電子能譜儀分析(AES)工作原理…………… 16
V
2-2-3 能量散射光譜儀(EDS) ……………………………… 18
2-2-3-1 能量散射光譜儀(EDS)工作原理………………… 18
2-2-3-2 能量散射光譜儀(EDS)的優缺點………………… 19
第三章 銲線能力之研究……………………………………… 21
3-1 銲線機制對銲線接合能力之影響………………………… 22
3-1-1 銲線程序……………………………………………… 22
3-1-1-1 銲線程序的拉力試驗(Wire Pull) ……………… 23
3-1-1-2 銲線程序的推球試驗(Ball Shear) …………… 24
3-1-1-3 銲線程序的導線高度檢驗(Loop Height) ……… 24
3-1-2 銲針對銲線接合能力的影響………………………… 25
3-1-3 機械接觸方程………………………………………… 26
3-2 封裝環境的腐蝕物質對銲線接合能力之影響…………… 28
3-2-1 可靠性試驗…………………………………………… 29
3-2-2 腐蝕形成之因素……………………………………… 31
3-3 封裝材料所形成的腐蝕及氧化問題……………………… 32
3-3-1 封模膠餅的組成分析………………………………… 32
3-3-2 封裝樹脂對金鋁微接點的影響……………………… 36
3-4 銲銲墊表面污染對銲線接合的影響……………………… 37
3-4-1 銲墊表面污染清除…………………………………… 37
3-4-2 銲墊分析……………………………………………… 37
3-5 介金屬化合物對銲線接合之影響………………………… 39
3-5-1 銲線接點的微結構分析……………………………… 40
3-5-2 金鋁的介金屬化合物孔洞成長觀…………………… 41
3-6 試驗步驟………………………………………………… 43
3-6-1 試片的分析…………………………………………… 43
3-6-2 化性分析……………………………………………… 44
VI
3-6-3 試驗分析……………………………………………… 44
3-6-4 物性分析……………………………………………… 45
3-6-4-1 第一球墊的可靠度試驗與介金屬化合物分析…… 45
3-6-4-2 第二球墊的可靠度試驗與介金屬化合物分析…… 46
3-6-5 介金屬化合物的分析………………………………… 46
3-6-5-1 剪應力與可靠度分析……………………………… 47
3-6-5-2 型態分析…………………………………………… 48
3-6-5-3 Cross Section 分析……………………………… 48
第四章 結果討論與結論……………………………………… 50
4-1 介金屬化合物形成孔洞對銲線接合能力的影響………… 50
4-2 封裝樹脂對金鋁微結構的影響…………………………… 52
4-3 銲墊表面污染分析……………………………………… 55
第五章 結論…………………………………………………… 57
參考文獻……………………………………………………… 112

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